TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 1.5-GHz to 2.5-GHz QUADRATURE MODULATOR FEATURES • • • • • APPLICATIONS • • • • • • • • Cellular Base Transceiver Station Transmit Channel IF Sampling Applications TDMA: GSM, IS-136, EDGE/UWC-136 CDMA: IS-95, UMTS, CDMA2000 Wireless Local Loop Wireless LAN IEEE 802.11 LMDS, MMDS Wideband Transceivers RHC PACKAGE (TOP VIEW) GND QREF IREF IVIN QVIN • • 71-dBc Single-Carrier WCDMA ACPR at –14-dBm Channel Power P1dB of 7 dBm Typical Unadjusted Carrier Suppression 35 dBc at 2 GHz Typical Unadjusted Sideband Suppression 35 dBc at 2 GHz Very Low Noise Floor Differential or Single-Ended I, Q Inputs Convenient Single-Ended LO Input Silicon Germanium Technology 1 16 15 14 13 GND GND LO 2 3 4 5 6 7 12 11 10 GND GND VCC 8 9 GND VCC PWD RFOUT GND • P0003-01 DESCRIPTION The TRF3702 is an ultralow-noise direct quadrature modulator that is capable of converting complex input signals from baseband or IF directly up to RF. An internal analog combiner sums the real and imaginary components of the RF outputs. This combined output can feed the RF preamp at frequencies of up to 2.5 GHz. The modulator is implemented as a double-balanced mixer. An internal local oscillator (LO) phase splitter accommodates a single-ended LO input, eliminating the need for a costly external balun. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004, Texas Instruments Incorporated TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. AVAILABLE OPTIONS 4-mm × 4-mm 16-Pin RHC (QFN) Package TA –40°C to 85°C TRF3702IRHC TRF3702IRHCR (Tape and reel) FUNCTIONAL BLOCK DIAGRAM VCC IVIN IREF +45° LO –45° Σ RFOUT 50 Ω QVIN QREF PWD GND B0002-01 2 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 GND QREF IREF IVIN QVIN RHC PACKAGE (TOP VIEW) 1 16 15 14 13 GND GND LO 12 11 2 3 10 4 8 9 GND VCC PWD RFOUT GND 5 6 7 GND GND VCC P0003-01 TERMINAL FUNCTIONS TERMINAL NAME NO. I/O DESCRIPTION GND 1, 2, 3, 5, 9, 11, 12 IREF 15 I In-phase (I) reference voltage/differential input IVIN 14 I In-phase (I) signal input LO 4 I Local oscillator input PWD 7 I Power down QREF 16 I Quadrature (Q) reference voltage/differential input QVIN 13 I Quadrature (Q) signal input RFOUT 8 O RF output VCC Ground 6, 10 Supply voltage ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) (2) VCC TA Supply voltage range –0.5 V to 6 V LO input power level 10 dBm Baseband input voltage level (single-ended) 3 Vp-p Operating free-air temperature range Lead temperature for 10 seconds (1) (2) –40°C to 85°C 260°C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Measured with respect toground 3 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 RECOMMENDED OPERATING CONDITIONS MIN NOM MAX 4.5 5 5.5 UNIT Supplies and References VCC Analog supply voltage VCM (IVIN, QVIN, IREF, QREF input common-mode voltage) 3.7 V V Local Oscillator (LO) Input Input frequency 1500 Power level (measured into 50 Ω) –6 2500 MHz 6 dBm 0 Signal Inputs (IVIN, QVIN) Input bandwidth 700 MHz ELECTRICAL CHARACTERISTICS Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 2140 MHz at 0 dBm, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX V(PWD) = 5 V 145 170 V(PWD) = 0 V 13 30 UNIT Power Supply ICC Total supply current mA Turnon time 120 Turnoff time 20 ns ns Power-down input impedance 11 kΩ 27 + j8 Ω 16 µA Local Oscillator (LO) Input Input impedance (1) Signal Inputs (IVIN, QVIN, IREF, QREF) Input bias current I, Q = VCM = 3.7 V (all inputs tied to VCM) Input impedance (1) Single-ended input 260 Differential input 130 For a listing of impedances at various frequencies, see Table 1. Table 1. RFOUT and LO Pin Impedance 4 Frequency (MHz) Z (RFOUT Pin) Z (LO Pin) 1500 31 – j 4.7 31.7 – j 8.8 1600 30.9 – j 0.3 29.3 – j 6.2 1700 29.3 + j 3.1 27.3 - j 3.1 1800 27.9 + j 7.2 26.5 – j 0.17 1900 27.6 + j 13 26.1+ – j 2.7 2000 29.4 +j 19.8 26.5 + j 5.4 2100 34.6 + j 27.2 27 + j 7.6 2200 44.2 + j 33 28 + j 9.5 2300 60 + j 33.6 29 + j 10.6 2400 78 + j 21 29.5 + j 11 2500 82 – j 5.8 29.8 + j 12.2 kΩ TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 RF OUTPUT PERFORMANCE Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 1842 MHz at 0 dBm (unless otherwise specified) PARAMETER TEST CONDITIONS MIN TYP –5 –2.5 MAX UNIT Single and Two-Tone Specifications Output power –50 –42 dBc Third baseband harmonic (USB or LSB) (2) –57 –50 dBc –59 –53 dBc IMD3 I, Q (1) = 1 Vp-p (two-tone signal, fBB1 = 928 kHz, fBB2 = 992 kHz) P1dB (output compression point) NSD Noise spectral density 7 I, Q = VCM = 3.7 VDC (all inputs tied to VCM), 6-MHz offset from carrier –148.5 RFOUT pin impedance (4) Carrier suppression Sideband suppression dBm/Hz –146.5 (3) Ω 28 + j8 I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted 30 I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55 I, Q (1) = 1 Vp-p, fBB = 928 kHz, over temperature (5) 44 I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted 35 I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized dBc 55 I, Q (1) = 1 Vp-p, fBB = 928 kHz, over temperature (5) (4) (5) dBm –155 6-MHz offset from carrier, Pout = 0 dBm, over temperature (1) (2) (3) dBm Second baseband harmonic (USB or LSB) (2) I, Q (1) = 1 Vp-p, fBB = 928 kHz dBc 47 I , Q = 1 Vp-p implies that themagnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to500 mVp-p. USB = upper sideband. LSB =lower sideband. Maximum noise values areassured by statistical characterization only, not production testing. Thevalues specified are over the entire temperature range, TA = –40°C to 85°C. For a listing of impedances at various frequencies, see Table 1. After optimization at room temperature. See the Definitions of Selected Specifications section. RF OUTPUT PERFORMANCE Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 1960 MHz at 0 dBm (unless otherwise specified) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Single and Two-Tone Specifications Output power –3 dBm Second baseband harmonic (USB or LSB) (2) I, Q (1) = 1 Vp-p, fBB = 928 kHz –50 dBc Third baseband harmonic (USB or LSB) (2) –60 dBc IMD3 I, Q (1) = 1 Vp-p (two-tone signal, fBB1 = 928 kHz, fBB2 = 992 kHz) P1dB (output compression point) NSD Noise spectral density Sideband suppression (1) (2) (3) (4) –53 7 6-MHz offset from carrier, Pout = 0 dBm, over temperature RFOUT pin impedance (4) Carrier suppression –59 –148 28 + j15 I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted 33 I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55 I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted 35 I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55 dBc dBm –146.5 (3) dBm/Hz Ω dBc dBc I , Q = 1 Vp-p implies that themagnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to500 mVp-p. USB = upper sideband. LSB =lower sideband. Maximum noise values areassured by statistical characterization only, not production testing. Thevalues specified are over the entire temperature range, TA = –40°C to 85°C. For a listing of impedances at various frequencies, see Table 1. 5 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 RF OUTPUT PERFORMANCE Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 2.1 GHz at 0 dBm (unless otherwise specified) PARAMETER TEST CONDITIONS MIN TYP –5 –3 MAX UNIT Single and Two-Tone Specifications Output power –50 –42 dBc Third baseband harmonic (USB or LSB) (2) –60 –51 dBc –55 –47 dBc I, Q (1) = 1 Vp-p, fBB = 928 kHz (two-tone signal, fBB1 = 928 kHz, fBB2 = 992 kHz) IMD3 P1dB (output compression point) NSD 7 Noise spectral density 60-MHz offset from carrier, Pout = 0 dBm, over temperature WCDMA ACPR Single carrier, channel power = –14 dBm Carrier suppression Sideband suppression –148.5 (3) dBm/Hz dBc Ω 35 + j27 I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted 30 I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55 I, Q (1) = 1 Vp-p, fBB = 928 kHz, over temperature (5) 47 I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted 37 I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55 I, (4) (5) –151 dBm 71 RFOUT pin impedance (4) (1) (2) (3) dBm Second baseband harmonic (USB or LSB) (2) I, Q (1) = 1 Vp-p, fBB = 928 kHz Q (1) = 1 Vp-p, fBB = 928 kHz, over temperature (5) dBc dBc 47 I , Q = 1 Vp-p implies that themagnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to500 mVp-p. USB = upper sideband. LSB =lower sideband. Maximum noise values areassured by statistical characterization only, not production testing. Thevalues specified are over the entire temperature range, TA = –40°C to 85°C. For a listing of impedances at various frequencies, see Table 1. After optimization at room temperature. See the Definitions of Selected Specifications section. THERMAL CHARACTERISTICS PARAMETER CONDITION RθJA Thermal resistace, junction to ambient RθJM Thermal resistace, junction to mounting surface RθJC Thermal resistace, junction to case Soldered pad using four-layer JEDEC board with four thermal vias Soldered pad using two-layer JEDEC board with four thermal vias NOM UNIT 42.8 °C/W 24.8 °C/W 67.6 °C/W DEFINITIONS OF SELECTED SPECIFICATIONS Unadjusted Carrier Suppression This specification measures the amount by which the local oscillator component is attenuated in the output spectrum of the modulator relative to the carrier. It is assumed that the baseband inputs delivered to the pins of the TRF3702 are perfectly matched to have the same dc offset (VCM). This includes all four baseband inputs: IVIN, QVIN, IREF and QREF. Unadjusted carrier suppression is measured in dBc. Adjusted (Optimized) Carrier Suppression This differs from the unadjusted suppression number in that the dc offsets of the baseband inputs are iteratively adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the output spectrum. Adjusted carrier suppression is measured in dBc. 6 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 DEFINITIONS OF SELECTED SPECIFICATIONS (continued) Unadjusted Sideband Suppression This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the output of the modulator, relative to the wanted sideband. It is assumed that the baseband inputs delivered to the modulator input pins are perfectly matched in amplitude and are exactly 90° out of phase. Unadjusted sideband suppression is measured in dBc. Adjusted (Optimized) Sideband Suppression This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. Adjusted sideband suppression is measured in dBc. Suppressions Over Temperature This specification assumes that the user has gone through the optimization process for the suppression in question, and set the optimal settings for the I, Q inputs at TA = 25°C. This specification then measures the suppression when temperature conditions change after the initial calibration is done. Figure 1 shows a simulated output and illustrates the respective definitions of various terms used in this data sheet. The graph assumes a baseband input of 50 kHz. 10 POUT 0 P − Power − dBm −10 −20 3RD LSB (dBc) SBS (dBc) 3RD LSB LSB (Undesired) 2ND USB (dBc) CS (dBc) −30 −40 −50 −60 −70 2ND LSB −80 −200 −150 −100 −50 USB (Desired) 2ND USB Carrier 0 3RD USB 50 100 150 200 f − Frequency Offset − kHz (Relative to Carrier) G007 Figure 1. Graphical Illustration of Common Terms 7 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS For all the performance plots in this section, the following conditions were used, unless otherwise noted: VCC = 5 V, VCM = 3.7 V, PLO = 0 dBm, I and Q inputs driven differentially at a frequency of 50 kHz. In the case of optimized suppressions, the point of optimization is noted and is always at nominal conditions and room temperature. A level of >50 dBc is assumed to be optimized. OUTPUT POWER vs I, Q AMPLITUDE OUTPUT POWER vs I, Q AMPLITUDE 10 10 5 –40°C POUT − Output Power − dBm POUT − Output Power − dBm 5 0 25°C −5 85°C −10 −15 −20 –40°C 0 85°C 25°C −5 −10 −15 −20 fLO = 1842 MHz fLO = 1960 MHz −25 −25 0 1 2 3 4 I, Q Amplitude − VPP 0 3 4 G001 G002 Figure 2. Figure 3. OUTPUT POWER vs I, Q AMPLITUDE UNADJUSTED CARRIER SUPPRESSION vs FREQUENCY CS − Unadjusted Carrier Suppression − dBc 45 5 POUT − Output Power − dBm 2 I, Q Amplitude − VPP 10 –40°C 0 85°C 25°C −5 −10 −15 −20 fLO = 2.1 GHz −25 0 1 2 I, Q Amplitude − VPP Figure 4. 8 1 3 40 35 30 G003 25°C 25 20 15 10 5 0 1400 4 –40°C 85°C 1600 1800 2000 2200 fLO − Frequency − MHz Figure 5. 2400 2600 G020 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) UNADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY UNADJUSTED CARRIER SUPPRESSION vs OUTPUT POWER 50 60 CS − Unadjusted Carrier Suppression − dBc SS − Unadjusted Sideband Suppression − dBc 65 85°C 55 50 45 25°C 40 35 30 –40°C 25 20 15 10 5 0 1400 1600 1800 2000 2200 2400 fLO − Frequency − MHz fLO = 1960 MHz 25°C 40 35 30 85°C 25 20 15 –40°C 10 5 0 −25 2600 −20 −15 −10 G021 0 Figure 6. Figure 7. UNADJUSTED SIDEBAND SUPPRESSION vs OUTPUT POWER CARRIER SUPPRESSION vs FREQUENCY 5 10 G008 80 Optimization Point 85°C 70 –40°C 30 CS − Carrier Suppression − dBc 40 25°C 20 10 −20 −15 −10 −5 0 POUT − Output Power − dBm Figure 8. 5 25°C 60 50 40 30 –40°C POUT = 0 dBm Optimized at 1960 MHz 0 1880 10 G011 85°C 20 10 fLO = 1960 MHz 0 −25 −5 POUT − Output Power − dBm 50 SS − Unadjusted Sideband Suppression − dBc 45 1900 1920 1940 1960 1980 fLO − Frequency − MHz 2000 2020 G025 Figure 9. 9 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) CARRIER SUPPRESSION vs VCM CARRIER SUPPRESSION vs SUPPLY VOLTAGE 80 90 Optimization Point 70 25°C –40°C 60 50 40 30 85°C 20 10 POUT = 0 dBm fLO = 1960 MHz Optimized at 3.7 V 0 3.0 60 50 40 30 4.0 –40°C POUT = 0 dBm fLO = 1960 MHz Optimized at 5 V 0 4.4 4.5 85°C 20 10 3.5 Optimization Point 25°C 70 CS − Carrier Suppression − dBc CS − Carrier Suppression − dBc 80 4.6 4.8 5.0 5.2 5.4 VCC − Supply Voltage − V VCM − V G034 G028 Figure 10. Figure 11. CARRIER SUPPRESSION vs LOCAL OSCILLATOR INPUT POWER SIDEBAND SUPPRESSION vs FREQUENCY 80 80 25°C Optimization Point 25°C 60 50 40 30 –40°C 85°C 20 10 0 −12 POUT = 0 dBm fLO = 1960 MHz Optimized at 0 dBm −9 −6 −3 60 50 40 0 3 6 9 Figure 12. 12 G039 Optimization Point –40°C 30 20 10 PLO − Local Oscillator Input Power − dBm 10 85°C 70 SS − Sideband Suppression − dBc CS − Carrier Suppression − dBc 70 5.6 POUT = 0 dBm Optimized at 1960 MHz 0 1880 1900 1920 1940 1960 1980 fLO − Frequency − MHz Figure 13. 2000 2020 G026 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) SIDEBAND SUPPRESSION vs VCM SIDEBAND SUPPRESSION vs SUPPLY VOLTAGE 80 90 85°C 25°C 70 SS − Sideband Suppression − dBc SS − Sideband Suppression − dBc 80 70 60 50 –40°C 40 Optimization Point 30 20 10 POUT = 0 dBm fLO = 1960 MHz Optimized at 3.7 V 0 3.0 60 50 4.0 Optimization Point 30 20 0 4.4 4.5 –40°C 40 10 3.5 85°C 25°C POUT = 0 dBm fLO = 1960 MHz Optimized at 5 V 4.6 4.8 5.0 5.2 VCC − Supply Voltage − V VCM − V G029 Figure 14. Figure 15. SIDEBAND SUPPRESSION vs LOCAL OSCILLATOR INPUT POWER CARRIER SUPPRESSION vs FREQUENCY 80 85°C CS − Carrier Suppression − dBc SS − Sideband Suppression − dBc 75 –40°C 70 60 50 25°C 40 Optimization Point 30 20 0 −12 5.6 G035 80 70 10 5.4 POUT = 0 dBm fLO = 1960 MHz Optimized at 0 dBm −9 −6 −3 65 60 55 50 45 40 35 30 25 0 3 6 9 PLO − Local Oscillator Input Power − dBm Figure 16. 12 G040 Optimization Point POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 1842 MHz 20 1780 1800 1820 1840 1860 1880 1900 1920 1940 fLO − Frequency − MHz G017 Figure 17. 11 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) CARRIER SUPPRESSION vs VCM CARRIER SUPPRESSION vs SUPPLY VOLTAGE 90 Optimization Point 70 60 50 40 30 20 10 POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 3.7 V 0 3.0 Optimization Point 70 CS − Carrier Suppression − dBc CS − Carrier Suppression − dBc 80 80 60 50 40 30 20 10 3.5 4.0 POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 5 V 0 4.4 4.5 4.6 VCM − V G043 CARRIER SUPPRESSION vs LOCAL OSCILLATOR INPUT POWER SIDEBAND SUPPRESSION vs FREQUENCY SS − Sideband Suppression − dBc CS − Carrier Suppression − dBc 5.6 G044 Optimization Point Optimization Point 40 30 20 POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 0 dBm −9 −6 −3 0 3 6 9 PLO − Local Oscillator Input Power − dBm Figure 20. 12 5.4 70 50 0 −12 5.2 Figure 19. 60 10 5.0 Figure 18. 80 70 4.8 VCC − Supply Voltage − V 12 G018 60 50 40 POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 1842 MHz 30 1780 1800 1820 1840 1860 1880 fLO − Frequency − MHz Figure 21. 1900 1920 G045 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) SIDEBAND SUPPRESSION vs VCM SIDEBAND SUPPRESSION vs SUPPLY VOLTAGE 80 70 Optimization Point 65 SS − Sideband Suppression − dBc SS − Sideband Suppression − dBc 70 60 50 40 30 20 10 POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 3.7 V 0 3.0 55 50 45 40 35 3.5 4.0 Optimization Point 60 POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 5 V 30 4.4 4.5 4.6 VCM − V G050 SIDEBAND SUPPRESSION vs LOCAL OSCILLATOR INPUT POWER CARRIER SUPPRESSION vs FREQUENCY 5.4 5.6 G051 80 70 60 50 40 30 20 POUT = 0 dBm TA = 25°C fLO = 1842 MHz Optimized at 0 dBm −9 −6 −3 65 60 55 50 45 40 35 30 25 0 3 6 9 PLO − Local Oscillator Input Power − dBm Figure 24. Optimization Point 75 Optimization Point CS − Carrier Suppression − dBc SS − Sideband Suppression − dBc 5.2 Figure 23. 70 0 −12 5.0 Figure 22. 80 10 4.8 VCC − Supply Voltage − V 12 G049 POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 2.1 GHz 20 2040 2060 2080 2100 2120 2140 fLO − Frequency − MHz 2160 2180 G054 Figure 25. 13 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) CARRIER SUPPRESSION vs VCM CARRIER SUPPRESSION vs SUPPLY VOLTAGE 80 90 Optimization Point 75 CS − Carrier Suppression − dBc CS − Carrier Suppression − dBc 80 70 60 50 40 30 20 10 POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 3.7 V 0 3.0 70 65 60 55 50 45 3.5 4.0 Optimization Point POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 5 V 40 4.4 4.5 4.6 G056 CARRIER SUPPRESSION vs LOCAL OSCILLATOR INPUT POWER SIDEBAND SUPPRESSION vs FREQUENCY 5.6 G057 40 30 20 POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 0 dBm −9 −6 −3 Optimization Point 85 SS − Sideband Suppression − dBc CS − Carrier Suppression − dBc Optimization Point 80 75 70 65 60 55 50 45 0 3 6 9 PLO − Local Oscillator Input Power − dBm Figure 28. 14 5.4 90 50 0 −12 5.2 Figure 27. 60 10 5.0 Figure 26. 80 70 4.8 VCC − Supply Voltage − V VCM − V 12 G055 POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 1842 MHz 40 2040 2060 2080 2100 2120 2140 fLO − Frequency − MHz Figure 29. 2160 2180 G058 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) SIDEBAND SUPPRESSION vs VCM SIDEBAND SUPPRESSION vs SUPPLY VOLTAGE 80 90 Optimization Point 70 SS − Sideband Suppression − dBc SS − Sideband Suppression − dBc 80 70 60 50 40 30 20 10 POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 3.7 V 0 3.0 60 50 30 20 10 3.5 4.0 Optimization Point 40 POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 5 V 0 4.4 4.5 4.6 4.8 5.0 5.2 5.4 VCC − Supply Voltage − V VCM − V G060 Figure 30. Figure 31. SIDEBAND SUPPRESSION vs LOCAL OSCILLATOR INPUT POWER P1dB vs FREQUENCY 5.6 G061 8 80 –40°C Optimization Point 7 60 6 50 5 25°C P1dB − dBm SS − Sideband Suppression − dBc 70 40 30 0 −12 4 3 2 20 10 85°C POUT = 0 dBm TA = 25°C fLO = 2.1 GHz Optimized at 0 dBm −9 −6 −3 1 0 3 6 9 PLO − Local Oscillator Input Power − dBm Figure 32. 12 G059 0 1400 1600 1800 2000 2200 fLO − Frequency − MHz 2400 2600 G019 Figure 33. 15 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) OUTPUT POWER FLATNESS vs VCM (POUT = 0 dBm NOMINAL) 5 5 4 4 POUT − Output Power Flatness− dBm POUT − Output Power Flatness − dBm OUTPUT POWER FLATNESS vs FREQUENCY (POUT = 0, –10 dBm NOMINAL) 3 2 –40°C 1 0 −1 25°C −2 85°C −3 −4 1800 1900 2000 2100 2200 fLO − Frequency − MHz 25°C 1 0 −1 −2 85°C −3 3.5 4.0 4.5 5.0 G022 G027 Figure 34. Figure 35. OUTPUT POWER FLATNESS vs LO INPUT POWER (POUT = 0 dBm NOMINAL) OUTPUT POWER FLATNESS vs SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL) 5 fLO = 1960 MHz 4 3 2 –40°C 25°C 1 0 −1 −2 85°C 2 –40°C 1 0 −1 −4 −4 −6 −3 0 3 6 9 PLO − Local Oscillator Input Power − dBm Figure 36. 12 G038 −5 4.4 25°C 85°C −2 −3 −9 fLO = 1842 MHz 3 −3 −5 −12 –40°C VCM − V POUT − Output Power − dBm POUT − Output Power Flatness − dBm 2 −5 3.0 2300 5 16 3 −4 −5 1700 4 fLO = 1960 MHz 4.6 4.8 5.0 5.2 VCC − Supply Voltage − V Figure 37. 5.4 5.6 G009 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) OUTPUT POWER FLATNESS vs SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL) OUTPUT POWER FLATNESS vs SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL) 5 4 3 POUT − Output Power − dBm POUT − Output Power − dBm 4 5 fLO = 1960 MHz –40°C 2 25°C 1 0 −1 −2 85°C 3 2 −1 −2 −4 −4 4.8 5.0 5.2 5.4 VCC − Supply Voltage − V 4.6 4.8 5.0 5.2 5.4 VCC − Supply Voltage − V G033 Figure 38. Figure 39. IMD3 vs OUTPUT POWER PER TONE 2ND USB vs FREQUENCY 70 5.6 G053 −30 –40°C POUT = 0 dBm 60 −35 50 –40°C 85°C −40 2nd USB − dBc 25°C IMD3 − dBc 85°C −5 4.4 5.6 25°C 0 −3 4.6 –40°C 1 −3 −5 4.4 fLO = 2.1 GHz 40 85°C 30 −45 25°C −50 20 −55 10 −60 fLO = 1.8 GHz 0 −15 −10 −5 POUT − Output Power Per Tone − dBm Figure 40. −65 1750 0 G016 1850 1950 2050 fLO − Frequency − MHz 2150 2250 G023 Figure 41. 17 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) 2ND USB vs I, Q AMPLITUDE 2ND USB vs I, Q AMPLITUDE 0 −30 fLO = 1960 MHz −10 25°C –40°C −20 −50 2nd USB − dBc 2nd USB − dBc −40 85°C −60 −30 85°C −40 −50 25°C −60 –40°C −70 −70 fLO = 1842 MHz −80 −80 0 1 2 3 4 I, Q Amplitude − VPP 0 1 2 3 I, Q Amplitude − VPP G004 Figure 42. Figure 43. 2ND USB vs I, Q Amplitude 2ND USB vs VCM −30 4 G005 −30 fLO = 2.1 GHz −35 –40°C −40 85°C 2nd USB − dBc 2nd USB − dBc −40 −50 25°C 85°C −60 −45 25°C −50 –40°C −55 −70 −60 POUT = 0 dBm fLO = 1960 MHz −80 0 1 2 I, Q Amplitude − VPP Figure 44. 18 3 −65 3.0 4 3.5 4.0 4.5 VCM − V G006 G030 Figure 45. TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) 2ND USB vs SUPPLY VOLTAGE 2ND USB vs LOCAL OSCILLATOR INPUT POWER −30 −35 −40 2nd USB − dBc –40°C 85°C −40 2nd USB − dBc −35 −30 POUT = 0 dBm fLO = 1960 MHz −45 25°C −50 –40°C −55 −50 25°C −60 −65 4.6 4.8 5.0 5.2 5.4 −65 −12 5.6 VCC − Supply Voltage − V POUT = 0 dBm fLO = 1842 MHz −9 −6 −3 0 3 6 9 PLO − Local Oscillator Input Power − dBm G036 Figure 46. Figure 47. 2ND USB vs LOCAL OSCILLATOR INPUT POWER 2ND USB vs LOCAL OSCILLATOR INPUT POWER −30 −30 −35 −35 −40 −45 −50 –40°C −55 12 G052 –40°C −40 85°C 2nd USB − dBc 2nd USB − dBc 85°C −55 −60 −70 4.4 −45 −45 85°C −50 25°C −55 25°C −60 −65 −12 −60 POUT = 0 dBm fLO = 1960 MHz −9 −6 −3 0 3 6 9 PLO − Local Oscillator Input Power − dBm Figure 48. 12 G041 −65 −12 POUT = 0 dBm fLO = 2.1 GHz −9 −6 −3 0 3 6 9 PLO − Local Oscillator Input Power − dBm 12 G062 Figure 49. 19 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) 3RD LSB vs FREQUENCY 3RD LSB vs I, Q AMPLITUDE −40 −20 fLO = 1842 MHz –40°C −45 85°C −30 −40 −55 −60 3rd LSB − dBc 3rd LSB − dBc −50 25°C −65 –40°C −50 25°C −60 85°C −70 −70 −80 −75 POUT = 0 dBm −80 1700 1800 1900 2000 2100 fLO − Frequency − MHz −90 0.0 2200 0.5 1.0 1.5 2.0 I, Q Amplitude − VPP G024 Figure 50. Figure 51. 3RD LSB vs I, Q AMPLITUDE 3RD LSB vs I, Q AMPLITUDE −20 2.5 G013 −20 fLO = 1960 MHz fLO = 2.1 GHz −30 −30 85°C –40°C −50 −60 25°C −60 –40°C −70 −80 −80 0.5 1.0 1.5 I, Q Amplitude − VPP Figure 52. 20 −50 −70 −90 0.0 85°C −40 3rd LSB − dBc 3rd LSB − dBc −40 2.0 2.5 G014 −90 0.0 25°C 0.5 1.0 1.5 I, Q Amplitude − VPP Figure 53. 2.0 2.5 G015 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) 3RD LSB vs VCM 3RD LSB vs SUPPLY VOLTAGE −40 0 −10 POUT = 0 dBm fLO = 1960 MHz −45 −50 3rd LSB − dBc −20 3rd LSB − dBc –40°C −30 –40°C 85°C −40 −50 −55 85°C −60 25°C −65 −70 −60 −75 25°C −70 3.0 3.5 4.0 −80 4.4 4.5 POUT = 0 dBm fLO = 1960 MHz 4.6 VCM − V 4.8 5.0 5.2 5.4 VCC − Supply Voltage − V G031 Figure 54. Figure 55. 3RD LSB vs LOCAL OSCILLATOR INPUT POWER SUPPLY CURRENT vs SUPPLY VOLTAGE −40 5.6 G037 200 −45 POUT = 0 dBm fLO = 1960 MHz –40°C 180 ICC − Supply Current − mA 3rd LSB − dBc −50 −55 85°C −60 25°C −65 −70 160 85°C 25°C 140 –40°C 120 −75 −80 −12 POUT = 0 dBm fLO = 1960 MHz −9 −6 −3 0 3 6 9 PLO − Local Oscillator Input Power − dBm Figure 56. 12 G042 100 4.4 4.6 4.8 5.0 5.2 VCC − Supply Voltage − V 5.4 5.6 G032 Figure 57. 21 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) NOISE AT 6-MHz OFFSET vs OUTPUT POWER NOISE AT 60-MHz OFFSET vs OUTPUT POWER −142 −142 fLO = 2.1 GHz −144 −146 −146 −148 Noise − dBm/Hz Noise − dBm/Hz fLO = 1960 MHz −144 85°C −150 −152 85°C −148 −150 −152 25°C –40°C −154 −154 –40°C −156 −25 −20 −15 −10 −5 0 5 POUT − Output Power − dBm 16 14 25°C −156 −25 −20 −15 −10 −5 0 5 POUT − Output Power − dBm G046 G063 Figure 58. Figure 59. NOISE DISTRIBUTION AT 6-MHz OFFSET OVER TEMPERATURE NOISE DISTRIBUTION AT 6-MHz OFFSET OVER TEMPERATURE 20 POUT = 0 dBm fLO = 1842 MHz POUT = 0 dBm fLO = 1960 MHz 18 16 12 10 Percentage Percentage 14 8 6 12 10 8 6 4 4 2 Noise − dBm/Hz 22 −147.0 −147.2 Noise − dBm/Hz G064 G065 Figure 60. −147.4 −147.6 −147.8 −148.0 −148.2 −148.4 0 −147.2 −147.4 −147.8 −147.6 −148.0 −148.4 −148.2 −148.8 −148.6 −149.0 −149.2 −149.6 −149.4 −149.8 −150.0 0 2 Figure 61. TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 TYPICAL CHARACTERISTICS (continued) NOISE DISTRIBUTION AT 60-MHz OFFSET OVER TEMPERATURE 20 18 POUT = 0 dBm fLO = 2.1 GHz 16 Percentage 14 12 10 8 6 4 −149.6 −149.4 −149.8 −150.0 −150.2 −150.4 −150.6 −150.8 −151.0 −151.2 −151.4 −151.6 0 −151.8 2 Noise − dBm/Hz G066 Figure 62. THEORY OF OPERATION The TRF3702 employs a double-balanced mixer architecture in implementing the direct I, Q upconversion. The I, Q inputs can be driven single-endedly or differentially, with comparable performance in both cases. The common mode level (VCM) of the four inputs (IVIN, IREF, QVIN, QREF) is typically set to 3.7 V and needs to be driven externally. These inputs go through a set of differential amplifiers and through a V-I converter to feed the double-balanced mixers. The ac-coupled LO input to the device goes through a phase splitter to provide the in-phase and quadrature signals that in turn drive the mixers. The outputs of the mixers are then summed, converted to single-ended signals, and amplified before they are fed to the output port RFOUT. The output of the TRF3702 is ac-coupled and can drive 50-Ω loads. 23 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 EQUIVALENT CIRCUITS Figure 63 through Figure 66 show equivalent schematics for the main inputs and outputs of the device. I, Q Baseband LO 50 Ω S0001-01 S0002-01 Figure 63. LO Equivalent Input Circuit Figure 64. IVIN, QVIN, IREF, QREF Equivalent Circuit 50 kΩ RFOUT S0003-01 Figure 65. RFOUT Equivalent Circuit 24 Power Down S0004-01 Figure 66. Power-Down (PWD) Equivalent Circuit TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 APPLICATION INFORMATION DRIVING THE I, Q INPUTS There are several ways to drive the four baseband inputs of the TRF3702 to the required amplitude and dc offset. The optimal configuration depends on the end application requirements and the signal levels desired by the designer. The TRF3702 is by design a differential part, meaning that ideally the user should provide fully complementary signals. However, similar performance in every respect can be achieved if the user only has single-ended signals available. In this case, the IREF and QREF pins just need to have the VCM dc offset applied. Implementing a Single-to-Differential Conversion for the I, Q inputs In case differential I, Q signals are desired but not available, the THS4503 family of wideband, low-distortion, fully differential amplifiers can be used to provide a convenient way of performing this conversion. Even if differential signals are available, the THS4503 can provide gain in case a higher voltage swing is required. Besides featuring high bandwidth and high linearity, the THS4503 also provides a convenient way of applying the VCM to all four inputs to the modulator through the VOCM pin (pin 2). The user can further adjust the dc levels for optimum carrier suppression by injecting extra dc at the inputs to the operational amplifier, or by individually adding it to the four outputs. Figure 67 shows a typical implementation of the THS4503 as a driver for the TRF3702. Gain can be easily incorporated in the loop by adjusting the feedback resistors appropriately. For more details, see the THS4503 data sheet at www.ti.com. 25 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 APPLICATION INFORMATION (continued) 10 pF 392 Ω +8 VA VCM 0.01 µF 0.1 µF 0.01 µF 7 3 +VCC NC 374 Ω Single-Ended I Input 8 2 402 Ω 0.1 µF THS4503 5 22.1 Ω 4 22.1 Ω IREF VOUT− VOCM VOUT+ 1 IREF + − IVIN IVIN −VCC 6 −8 VA 0.1 µF 0.01 µF 392 Ω 10 pF S0005-02 Figure 67. Using the THS4503 to Condition the Baseband Inputs to the TRF3702 (I Channel Shown) 26 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 APPLICATION INFORMATION (continued) DRIVING THE LOCAL OSCILLATOR INPUT The LO pin is internally terminated to 50 Ω, thus enabling easy interface to the LO source without the need for external impedance matching. The power level of the LO signal should be in the range of –6 dBm to 6 dBm. For characterization purposes, a power level of 0 dBm was chosen. An ideal way of driving the LO input of the TRF3702 is by using the TRF3750, an ultralow-phase-noise integer-N PLL from Texas Instruments. Combining the TRF3750 with an external VCO can complete the loop and provide a flexible, convenient, and cost-effective solution for the local oscillator of the transmitter. Figure 68 shows a typical application for the LO driver network that incorporates the TRF3750 integer-N PLL synthesizer into the design. Depending on the VCO output and the amount of signal loss, an optional gain stage may be added to the output of the VCO before it is applied to the TRF3702 LO input. DVDD 10 pF + VVCO 0.1 F 0.1 F 10 pF + 10 pF CE 100 pF 15 7 AVDD 10 SUPPLY + 10 F 0.1 F 0.1 F 10 F To TRF3702 LO Input + 10 F 10 pF DVDD 10 F VCP AVDD VCP 16 16.5 1 nF GND TCXO (10-MHz Reference) 8 REFIN CPOUT 20 k 2 1 nF TRF3750 DECOUPLING NOT SHOWN RSET 10 nF V TUNE 82 pF GND 1 OUT VCO 16.5 100 pF GND 16.5 3.9 k RSET 4.7 k 12 LE 13 RFINA DATA LE MUXOUT DGND DATA CLK CPGND 11 AGND CLK 3 4 9 RFINB 6 14 LOCK DETECT 100 pF 49.9 5 100 pF S0009-02 Figure 68. Typical Application Circuit for Generating the LO Signal for the TRF3702 Modulator PCB LAYOUT CONSIDERATIONS The TRF3702 is a high-performance RF device; hence, care should be taken in the layout of the PCB in order to ensure optimum performance. Proper decoupling with low-ESR ceramic chip capacitors is needed for the VCC supplies (pins 6 and 10). Typical values used are in the order of 1 pF parallel to 0.1 µF, with the lower-valued capacitors placed closer to the device pins. In addition, a larger tank capacitor in the order of 10 µF should be placed on the supply line as layout permits. At least a 4-layer board is recommended for the PCB. If possible, a solid ground plane and a ground pour is also recommended, as is a power plane for the supplies. Because the balance of the four I, Q inputs to the modulator can be critical to device performance, care should be taken to ensure that the trace runs for all four inputs are equal in length. In the case of single-ended drive of the I, Q inputs, the two unused pins IREF and QREF are fed with the VCM dc voltage only, and should be decoupled with a 0.1-µF capacitor (or smaller). The LO input trace should be minimized in length and have controlled impedance of 50 Ω. No external matching components are needed because there is an internal 50-Ω termination. The RFOUT pin should also have a relatively small trace to minimize parasitics and coupling, and should also be controlled to 50 Ω. An impedance-matching network can be used to optimize power transfer, but is not critical. All the results shown in the data sheet were taken with no impedance matching network used (RFOUT directly driving an external 50-Ω load). The exposed thermal and ground pad on the bottom of the TRF3702 should be soldered to ground to ensure optimum electrical and thermal performance. The landing pattern on the PCB should include a solid pad and 4 thermal vias. These vias typically have 1,2-mm pitch and 0,3-mm diameter. The vias can be arranged in a 2×2 array. The thermal pad on the PCB should be at least 1,65×1,65 mm. A suggested layout is shown in Figure 69. 27 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 APPLICATION INFORMATION (continued) 0.8 mm Via 0.3 mm Drill (4 Places) Power Pad 1.65 mm x 1.65 mm 1.2 mm 3.5 mm 1 mm x 0.432 mm (16 Places) 3.2 mm M0002-01 Figure 69. Board Layout for the TRF3702 Device IMPLEMENTING A DIRECT UPCONVERSION TRANSMITTER USING A TI DAC The TRF3702 is ideal for implementing a direct upconversion transmitter, where the input I, Q data can originate from an ASIC or a DAC. Texas Instruments' line of digital-to-analog converters (DAC) is ideally suited for interfacing to the TRF3702. Such DACs include, among others, the DAC290x series, DAC5672, and DAC5686. This section illustrates the use of the DAC5686, which offers a unique set of features that make interfacing to the TRF3702 easy and convenient. The DAC5686 is a 16-bit, 500 MSPS, 2×–16× interpolating dual-channel DAC, and it features I, Q adjustments for optimal interface to the TRF3702. User-selectable, 11-bit offset and 12-bit gain adjustments can optimize the carrier and sideband suppression of the modulator, resulting in enhanced performance and relaxed filtering requirements at RF. The preferred mode of operation of the DAC5686 for direct interface with the TRF3702 at baseband is the dual-DAC mode. The user also has the flexibility of selecting any one of the four possible complex spectral bands to be fed into the TRF3702. For details on the available modes and programming, see the DAC5686 data sheet available at www.ti.com. Figure 70 shows the DAC5686 in dual-DAC mode, which is best-suited for zero-IF interface to the TRF3702. In this mode, a seamless, passive interface between the DAC output and the input to the modulator is used, so that no extra components are needed between the two devices. The optimum dc offset level for the inputs to the TRF3702 (VCM) is approximately 3.7 V. The output of the DAC should be centered around 3.3 V or less (depending on signal swing), in order to ensure that its output compliance limits are not exceeded. The resistive network shown in Figure 70 allows for this dc offset transition while still providing a dc path between the DAC output and the modulator. This ensures that the dc offset adjustments on the DAC5686 can still be applied to optimize the carrier suppression at the modulator output. The combination of the DAC5686 and the TRF3702 provides a unique signal-chain solution with state-of-the-art performance for wireless infrastructure applications. 28 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 APPLICATION INFORMATION (continued) +3.3 V +5 V VCC Fdata A Offset IOUTA1 IVIN IREF DEMUX 16-Bit DAC IOUTA2 DA[15:0] A Gain +45° LO B Gain B Offset Σ RFOUT 50 Ω 16-Bit DAC DB[15:0] –45° IOUTB1 QVIN IOUTB2 QREF DAC5686 TRF3702 PWD +3.3 V GND +5 V S0010-02 Figure 70. DAC5686 in Dual-DAC Mode With Quadrature Modulator GSM Applications The TRF3702 is ideally suited for GSM applications, because it combines high linearity with low noise levels. Figure 60 and Figure 61 show the distribution of noise vs output power for the TRF3702 over the entire recommended temperature range. The level of noise attained in combination with the superior IMD3 performance shown in Figure 40 means that the user can reach superior levels of C/N while maintaining high linearity. This combination offers the capability of delivering low levels of EVM, meeting the stringent requirements imposed by the GSM/EDGE standards. Figure 71 shows the spectral mask compliance for the device versus channel power, for both 400-kHz and 600-kHz offsets. 29 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 APPLICATION INFORMATION (continued) GMSK SPECTRAL PERFORMANCE vs CHANNEL POWER GMSK Spectral Performance − dBc in 30 kHz 90 600-kHz Offset 80 70 400-kHz Offset 60 50 40 30 20 10 fLO = 2 GHz 0 −14 −12 −10 −8 −6 −4 −2 0 Channel Power − dBm G047 Figure 71. WCDMA Applications The TRF3702 is also optimized for WCDMA applications, where both adjacent-channel power ratio (ACPR) and noise density are critically important. Figure 62 shows the noise performance of the modulator at a 60-MHz offset over temperature. In addition, Figure 72 shows the 60-MHz offset noise measured at the output of the TRF3702 versus WCDMA channel power. Using Texas Instruments' DAC568x series of high-performance digital-to-analog converters in the configuration depicted in Figure 70, state-of-the-art levels of ACPR have been measured. In each case, test model 1 was used with 64 active channels as the baseband input to the TRF3702. Figure 73 shows the performance attained for a single WCDMA carrier at 2.14 GHz, with a measured ACPR of 71.2 dBc for a channel power of –14 dBm. This unprecedented level of ACPR along with the low levels of noise at 60-MHz offset makes the TRF3702 an optimum choice for such applications. Figure 74 shows the single-carrier WCDMA ACPR performance versus channel power; it is important to note that even at high output power levels, the TRF3702 maintains great linearity, offering 64 dBc of ACPR at an output-channel power of –8 dBm. 30 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 APPLICATION INFORMATION (continued) NOISE AT 60-MHz OFFSET vs WCDMA CHANNEL POWER SINGLE-CARRIER WCDMA PERFORMANCE −152.0 0 −152.2 −20 fLO = 2140 MHz Channel Power = −14 dBm ACPR = 71.2 dBc −40 Power − dBm −152.6 −152.8 −153.0 −60 −80 −153.2 −100 −153.4 −153.6 −20 −15 −10 −5 −120 2125 0 2130 Channel Power − dBm 2135 2140 2145 2150 2155 f − Frequency − MHz G068 G067 Figure 72. Figure 73. SINGLE-CARRIER WCDMA ACPR vs CHANNEL POWER 72 71 70 69 ACPR − dBc Noise − dBm/Hz −152.4 68 67 66 65 64 63 −25 −20 −15 −10 −5 0 Channel Power − dBm G068 Figure 74. 31 TRF3702 www.ti.com SLWS149 – SEPTEMBER 2004 APPLICATION INFORMATION (continued) The TRF3702 can also be used for multicarrier applications, as is illustrated in Figure 75. For a 4-carrier case at a total output power of –16.7 dBm, an ACPR of almost 63 dBc can be reached. Figure 76 shows the ACPR profile for a 4-carrier WCDMA application versus per-carrier channel power. Further improvements in performance can be achieved by including a low-pass filter between the output of the DAC and the input to the TRF3702, based on the frequency planning and specific requirements of a given design. The combination of the TRF3702, the DAC568x, and the TRF3750 provides a unique signal-chain chipset capable of delivering state-of-the-art levels of performance for the most challenging WCDMA applications. FOUR-CARRIER WCDMA ACPR vs CHANNEL POWER (PER CARRIER) FOUR-CARRIER WCDMA ACPR PERFORMANCE 64 0 −20 fLO = 2140 MHz Total Carrier Power = −16.7 dBm ACPR = 62.8 dBc ALT ACPR = 63.7 dBc 63 62 ACPR − dBc Power − dBm −40 −60 61 60 −80 59 −100 −120 2110 58 2120 2130 2140 2150 2160 2170 57 −30 −25 −20 32 −10 G070 G069 Figure 75. −15 Channel Power (Per Carrier) − dBm f − Frequency − MHz Figure 76. THERMAL PAD MECHANICAL DATA www.ti.com RHC (S-PQFP-N16) THERMAL INFORMATION This package incorporates an exposed thermal pad that is designed to be attached directly to an external heatsink. The thermal pad must be soldered directly to the printed circuit board (PCB). After soldering, the PCB can be used as a heatsink. In addition, through the use of thermal vias, the thermal pad can be attached directly to a ground plane or special heatsink structure designed into the PCB. This design optimizes the heat transfer from the integrated circuit (IC). For additional information on the Quad Flatpack No-Lead (QFN) package and how to take advantage of its heat dissipating abilities, refer to Application Report, Quad Flatpack No-Lead Logic Packages, Texas Instruments Literature No. SCBA017 and Application Report, 56-Pin Quad Flatpack No-Lead Logic Package, Texas Instruments Literature No. SCEA032. Both documents are available at www.ti.com. The exposed thermal pad dimensions for this package are shown in the following illustration. 2 4 5 1 16 Exposed Thermal Pad 1,55 +0,10 0,15 13 9 12 10 1,55 +0,10 0,15 Bottom View NOTE: All linear dimensions are in millimeters QFND049 Exposed Thermal Pad Dimensions PACKAGE OPTION ADDENDUM www.ti.com 4-Mar-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TRF3702IRHC ACTIVE QFN RHC 16 92 None CU Level-2-235C-1 YEAR TRF3702IRHCR ACTIVE QFN RHC 16 3000 None CU Level-2-235C-1 YEAR Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. None: Not yet available Lead (Pb-Free). Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens, including bromine (Br) or antimony (Sb) above 0.1% of total product weight. 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