ETC 9926D

NANKER
NK9926D
Dual N-Channel Enhancement Mode MOSFET
Feature
16V/6A,
RDS(ON) = 32mΩ(MAX) @VGS = 4.5V.
RDS(ON) = 45mΩ(MAX) @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON) .
Reliable and Rugged.
SOP-8 for Surface Mount Package.
SOP-8
Applications
●
LI-ION Protection Circuit
Absolute Maximum Ratings
TA=25℃ Unless Otherwise noted
Symbol
Limit
Units
Drain-Source Voltage
Parameter
VDS
16
V
Gate-Source Voltage
VGS
±12
V
ID
6
A
Drain Current-Continuous
Electrical Characteristics
Parameter
TA=25℃ Unless Otherwise noted
Symbol
Test Conditions
Min
Typ.
Max
Units
BVDSS
VGS=0V, ID=250µA
16
-
-
V
Zero-Gate Voltage Drain Current
IDSS
VDS=6V, VGS=0V
-
-
1
µA
Gate Body Leakage Current, Forward
IGSSF
VGS=12V, VDS=0V
-
-
100
nA
Gate Body Leakage Current, Reverse
IGSSR
VGS=-12V, VDS=0V
-
-
-100
nA
VGS(th)
VGS= VDS, ID=250µA
0.4
-
1.3
V
VGS =4.5V, ID =6.0A
-
26
32
mΩ
VGS =2.5V, ID =5.2A
-
35
45
mΩ
1.2
V
Off Characteristics
Drain to Source Breakdown Voltage
On Characteristics
Gate Threshold Voltage
Static Drain-source
RDS(ON)
On-Resistance
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=1.5A
Nanker Group
Headquarters:
Tel: 0756-8128088
E-mail: info@nanker.com
September 6, 2006
Shenzhen Sales Office:
Fax: 0756-8889513
Tel: 0755-86022782, 86022783, 86022910
Fax: 0755-86022774
Website: www.nanker.com
Page 1 of 3
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NANKER
NK9926D
Typical Characteristics
35
20
18
30
ID,Drain Current(Amps)
ID,Drain Current(Amps)
VGS=2.5,3.5,4.5V
16
14
12
10
8
VGS=2.0V
6
25
20
Tj=125℃
15
10
Tj=25℃
4
5
2
VGS=1.5V
0
0
0.5
1
1.5
2
0
2.5
3
0
VDS,Drain-to-Source Voltage(Volts)
0.5
1
1.5
Figure 1.Output Characteristics
2.5
3
Figure 2.Transfer Characteristics
21.5
0.8
Vth,Normalized Gate-Source Threshold
Voltage(V)
ID=250uA
BVDSS,Normalized Drain-Source Breakdown Voltage(V)
2
VGS,Gate-to-Source Voltage(Volts)
21
20.5
20
19.5
19
ID=250uA
0.7
0.6
0.5
0.4
0.3
0.2
0
50
100
150
50
100
150
Tj.Junction Temperature(℃)
Tj,Junction Temperature(℃)
Figure 3.Breakdown Voltage Variation
with Temperature
September 6, 2006
0
Page 2 of 3
Figure 4.Gate Threshold Variation
with Temperature
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NANKER
NK9926D
Typical Characteristics
0.06
0.055
4.5V/6A
0.035
RDS(on)-On Resistance(Ω)
RDS(on),Normalized On-Resistance(Ω)
0.04
0.03
0.025
0.02
VGS=2V
0.05
0.045
0.04
0.035
VGS=2.5V
0.03
VGS=3V
0.025
VGS=4、5、6V
0.02
0.015
0.015
0.01
0
50
100
150
1
6
Tj.Junction Temperature(℃)
11
16
ID-Drain Current(A)
Figure 5.On-Resistance Variation
with Temperature
Figure 6.On-Resistance vs. Drain Current
100
0.09
0.07
IS-Source Current(A)
RDS(on)-On Resistance(Ω)
0.08
0.06
0.05
0.04
ID=6A
0.03
0.02
10
Tj=150℃
Tj=25℃
1
ID=5.2A
0.01
0
0.1
0
2
4
6
8
10
Figure 7.On-Resistance vs. Gate-to-Source
Voltage
September 6, 2006
0.1
0.3
0.5
0.7
0.9
1.1
1.3
VSD-Source-to-Drain Voltage(V)
VGS,Gate-to-Source Voltage(Volts)
Page 3 of 3
Figure 8.Source-Drain Diode Forward
Voltage
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