ETC PW410

PW410
InGaP HBT Gain Block
Features
Functional Diagram
Applications
DC - 3000MHz
Broadband Gain Block
20 dB Gain at 0.9GHz
Mobile Infrastructure
+19 dBm P1dB
Cellular, PCS, GSM, GPRS,
+35.5 dBm Output IP3
WCDMA, WiBro
Single Voltage Supply
W-LAN / DMB
Lead-free / Green / RoHS-
CATV / DBS
compliant SOT-89 Package
RFID / Fixed Wireless
4
3
2
1
Function
Pin No.
RF IN
1
RF OUT / Bias
3
Ground
2,4
Description
The PW410 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers. The
amplifier features high linear performance, wideband operation, and high reliability. The PW410 operates from a
single voltage supply and requires only two DC-blocking capacitors, a bias resistor and an inductor for operation.
The device is a general purpose buffer amplifier that offers high dynamic range in a low cost surface-mountable
plastic SOT-89 packages.
Specifications
Symbol
S21
S11
Parameters
Gain
Input Return Loss
S22
Output Return Loss
P1dB
Output Power @1dB
compression
OIP3
Output Third Order
intercept
Units
Freq.
Min.
Typ.
dB
75 MHz
900 MHz
1900 MHz
2300 MHz
21.5
20.5
18.5
17.5
dB
75 MHz
900 MHz
1900 MHz
2300 MHz
-20
-20
-16
-15
dB
75 MHz
900 MHz
1900 MHz
2300 MHz
-25
-23
-11
-9
dBm
75 MHz
900 MHz
1900 MHz
2300 MHz
19.5
19
18.5
18
dBm
75 MHz
900 MHz
1900 MHz
2300 MHz
35
35.5
33.0
32
75 MHz
900 MHz
1900 MHz
2300 MHz
3.1
3.4
3.5
3.6
NF
Noise Figure
dB
V/I
Device voltage / current
V/mA
4.96/70
Rth
Thermal Resistance
°C/W
106
Tj
Junction Temperature
°C
124
Max.
Test Conditions : T=25°C, Supply Voltage=+6V, Rbias=15ohm, 50ohm System, OIP3 measured with two tones at an output power of +3dBm/tone separated
by 1MHz.
http://www.prewell.com
1
December 2006
PW410
InGaP HBT Gain Block
Typical RF Performance for 1.9GHz Tuned Application Circuit
Supply Bias Voltage = 6V, R(bias)= 15 ohm, Current= 69mA
Frequency
MHz
500
900
1500
1900
2300
3000
S21
dB
20.9
20.7
19.7
18.8
17.8
16.5
S11
dB
-13
-21
-19
-17
-15
-16
S22
dB
-12
-24
-13
-11
-9
-8
P1dB
dBm
19
19.4
19.1
18.3
17.6
16
OIP3
dBm
34.0
36.0
34.4
33.0
32.5
29.5
Noise Figure
dB
3.3
3.3
3.4
3.4
3.5
3.7
Input Return Loss
Gain vs. Frequency
15
S11(dB)
Gain(dB)
20
10
Output Return Loss
0
0
-10
-10
S22(dB)
25
-20
-20
o
+25 C
o
-40 C
o
+85 C
o
o
0
0.0
-30
+25 C
o
-40 C
o
+85 C
5
0.5
1.0
1.5
2.0
+25 C
o
-40 C
o
+85 C
2.5
-40
0.0
3.0
0.5
1.0
Output IP3 vs. Frequency
30
1.0
2.5
3.0
2.5
3.0
NF vs. Frequency
15
+25 C
o
-40 C
o
+85 C
10
1.5
3
2
2.0
2.5
5
0.5
3.0
1.0
1
o
+25 C
1.5
2.0
2.5
0
0.0
3.0
20
15
10
Gain
Output Power
-4
Input Power(dBm)
0
4
8
1.5
2.0
ACPR IS-95A vs. Channel Power
-40
IS-95, 9 Ch.Forward, 30 kHz Meas BW, +/-885 kHz offset
freq=1.9GHz
-45
20
ACPR(dBc)
OutPut Power(dBm)/ Gain(dB)
25
-8
1.0
Frequency (GHz)
Output Power / Gain vs. Input Power @ 1.9GHz
5
0.5
Frequency (GHz)
25
-12
2.0
5
Output Power / Gain vs. Input Power @ 0.9GHz
-16
1.5
4
Frequency (GHz)
0
-20
1.0
o
+25 C
o
-40 C
o
+85 C
25
0.5
Frequency (GHz)
NF(dB)
P1dB(dBm)
OIP3(dBm)
-40
0.0
3.0
20
o
OutPut Power(dBm)/ Gain(dB)
2.5
P1dB vs. Frequency
25
35
20
0.5
2.0
Frequency (GHz)
Frequency(GHz)
40
1.5
-30
15
10
Gain
Output Power
5
0
-20
-50
-55
-60
-65
-70
-16
-12
-8
-4
Input Power(dBm)
0
4
8
4
6
8
10
12
Output Channel Power(dBm)
http://www.prewell.com
2
December 2006
PW410
InGaP HBT Gain Block
Recommended Bias Values
1.9GHz Tuned Application Circuit
Supply
Voltage
Supply Voltage
R bias Value
Size
5.3 V
4.7 Ω
0805
6V
15 Ω
0805
7V
30 Ω
1210
8V
45 Ω
1210
9V
58 Ω
2010
10 V
74 Ω
2010
12 V
115 Ω
2512
R Bias
1uF
56pF
22nH
RF IN
RF OUT
56pF
56pF
Typical RF Performance for 50 - 500MHz Tuned Application Circuit
Supply Bias Voltage = 6V, R(bias)= 15 ohm, Current= 69mA
Frequency
MHz
75
125
300
500
S21 : Gain
dB
21.5
21.5
21.3
21.1
S11 : Input Return Loss
dB
-20
-21
-21
-20
S22 : Output Return Loss
dB
-28
-55
-24
-19
Output P1dB
dBm
19.6
19.8
19.6
19.5
Output IP3 @3dBm
dBm
35.0
35.0
35.0
34.0
Noise Figure
dB
3.1
3.1
3.2
3.2
Gain vs. Frequency
Supply
Voltage
1uF
25
Gain(dB)
R Bias
30
20
o
820nH
RF IN
10nF
+25 C
o
-40 C
o
+85 C
15
RF OUT
10
10nF
100
10nF
200
300
400
500
600
Frequency(MHz)
Input Return Loss
Output Return Loss
0
0
-10
o
+25 C
o
-40 C
o
+85 C
-20
S22(dB)
S11(dB)
-10
-20
-30
-40
o
-50
+25 C
o
+85 C
o
-40 C
-60
-30
-70
100
200
300
400
500
600
100
Frequency(MHz)
200
300
400
500
600
Frequency(MHz)
http://www.prewell.com
3
December 2006
PW410
InGaP HBT Gain Block
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
+8
V
Supply Current
200
mA
RF Power Input
10
dBm
Storage Temperature
-55 to +125
°C
Ambient Operating Temperature
-40 to +85
°C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-89 Package Outline
ESD / MSL Ratings
1. ESD sensitive device.
Observe Handling Precautions.
2. ESD Rating : Class 2(Passes at 2000V min.)
Human Body Model (HBM), JESD22-A114
3. ESD Rating : Class IV (Passes at 1000V min.)
Charged Device Model (CDM), JESD22-C101
4. MSL (Moisture Sensitive Level) Rating : Level 3
at +260°C Convection reflow, J-STD-020
Evaluation Board Layout (4x4)
Mounting Instructions
1. Use a large ground pad area with many plated
through-holes as shown.
2. We recommend 1 oz copper minimum.
3. Measurement for our data sheet was made on
0.8mm thick FR-4 Board.
4. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
5. RF trace width depends on the board material and
construction.
6. Add mounting screws near the part to fasten the
board to a heatsink.
http://www.prewell.com
4
December 2006