ONSEMI NCP5380

NCP5380
7-Bit, Programmable,
Single-Phase, Synchronous
Buck Switching Regulator
Controller
http://onsemi.com
General Description
The NCP5380 is a highly efficient, single−phase, synchronous buck
switching regulator controller. With its integrated drivers, the
NCP5380 is optimized for converting the silver box voltage to the
supply voltage required by high performance Intel chipsets. An
internal 7−bit DAC is used to read a VID code directly from the
chipset.
The NCP5380 uses a multimode architecture. It provides
programmable switching frequency that can be optimized for
efficiency depending on the output current requirement. In addition,
the NCP5380 includes a programmable load line slope function to
adjust the output voltage as a function of the load current so that the
core voltage is always optimally positioned for a load transient. The
NCP5380 also provides accurate and reliable current overload
protection and a delayed power−good output. The IC supports
on−the−fly output voltage changes requested by the chipset.
The NCP5380 is specified over the extended commercial
temperature range of 0°C to 85°C and is available in a 32−lead QFN.
MARKING
DIAGRAM
1
1
QFN32, 5x5
CASE 488AM
MN SUFFIX
NCP5380 = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
YY
= Year
WW
= Work Week
G
= Pb Free Package
(Note: Microdot may be in either location)
PIN CONFIGURATION
•
•
•
•
•
•
•
•
•
PWRGD
IMON
N/C
FBRTN
FB
COMP
GND
ILIM
1
VCC
BST
DRVH
SW
PVCC
DRVL
PGND
GND
NCP5380
(Top View)
IREF
RPM
RT
RAMP
LLINE
CSREF
CSFB
CSCOMP
•
•
Regulator Specifications
Integrated MOSFET Drivers
±8 mV Worst−case Differentially Sensed Core Voltage Error over
Temperature
Automatic Power−saving Modes Maximize Efficiency During Light
Load Operation
Soft Transient Control Reduces Inrush Current and Audio Noise
Independent Current Limit and Load Line Setting Inputs for
Additional Design Flexibility
Built−in Power−good Masking Supports Voltage Identification (VID)
On−the−fly Transients
7−bit, Digitally Programmable DAC
Short−circuit Protection with Programmable Latch−off Delay
Current Monitor Output Signal
32−lead QFN
This is a Pb−Free Device
EN
VID1
VID2
VID3
VID4
VID5
VID6
VID7
Features
• Single−chip Solution
• Fully Compatible with the Intel VR11 CPU Chipset Voltage
NCP5380
AWLYYWWG
G
32
ORDERING INFORMATION
Device
Package
Shipping†
NCP5380MNR2G
QFN−32
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Applications
• Desktop Power Supplies for Next−generation Intel Chipsets
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 0
1
Publication Order Number:
NCP5380/D
NCP5380
VID6
VID5
VID4
VID3
VID2
VID1
VID0
VR_ON
PWRGD
R2
10
V5S
C6
1m
Q1
4
Q1
32 1
VDC
10 mF x 7
+ C30
220mF
2.5V
10 mF x 7
+C22 + C23
220m
220m
2.5V
2.5V
C41
VOUT
C33
C1 C2 C3 C4
10m
10m 10m 10m 25V
25V 25V 25V
100 kW
RTH1
8% NTC
L1
560 nH/0.8 mOhm
DNL
CSNB
RSNB
DNL
5 6 7 8 5 6 7 8
4.7m
C8 4
32 1
4
32 1
5 6 7 8 5 6 7 8
4
32 1
Q4
RPH
Q3
RCS1 RCS2
100k
C39
C47
Figure 1. Application Schematic
IMON
RMON 4.53k
10
54.9k 88.7k
24
VCC CBST
0
1m
23
22 RBST
21
20
19
18
17
AGND
33
AGND
CCS2 CCS1
PWRGD
BST
IMON
DRVH
NC
SW
FBRTN
U1
PVCC
FB NCP5380
DRVL
COMP
PGND
AGND
RT
390k
R55
2.2n
R24 DNL
C26
1n
2.7n
0
R23
2
VSSSense
RA
20.0k
RRAMP
604k
RREF RRPM
200k
80.6k
RLIM
10k
1
C28
CMON
CA3
R22
2
R19
1n
20
0.01m 866
3
0.1m
4
1.00k
5
6
CA
RB
VCCSense
7
CFB
470p
CB DNL
8
22p
ILIM
JP1
SHORTPIN
Connect Power Ground to
Controller Ground
under the controller
VDC
1.00k
R12
C27
1n
http://onsemi.com
32
31
30
29
28
27
26
25
EN
VID1
VID2
VID3
VID4
VID5
VID6
VID7
IREF
RPM
RT
RAMP
LLINE
CSREF
CSFB
CSCOMP
9
10
11
12
13
14
15
16
NCP5380
GND
VCC
EN
RPM
S
+
LLINE
+
+
S
DAC + 200 mV
CSREF
DAC − 300 mV
1.55V
OCP
Shutdown
Delay
Current
Monitor
−
+
Current
Limit
Circuit
PWRGD
Start Up
Delay
IMON
+
CSREF
−
CSFB
CSCOMP
Soft
Transient
Delay
ILIM
Delay
Disable
Precision
Reference
GND
Soft Start
and Soft
Transient
Control
VID
DAC
REF
IREF
VID1
VID3
VID2
VID4
VID5
DAC
VID7
VID6
DRVL
OVP
−
+
N/C
FBRTN
SW
PGND
CSREF
_
PWRGD
Open
Drain
PWRGD
DRVH
MOSFET
Driver
−
+
REF
Oscillator
VEA
−
+
FB
RAMP
BST
UVLO Shutdown
and Bias
COMP
RT
Figure 2. Functional Block Diagram
ELECTRICAL CHARACTERISTICS VCC = 5 V, FBRTN = 112.5 mV, VVID = 1.25 V, TA = 0°C to 85°C, unless otherwise noted (Note 1).
Current entering a pin (sunk by the device) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VOLTAGE CONTROL VOLTAGE ERROR AMPLIFIER (VEAMP)
FB, LLINE Voltage Range (Note 2)
VFB, VLLINE
Relative to CSREF = VDAC
−200
+200
mV
FB, LLINE Offset Voltage (Note 2)
VOSVEA
Relative to CSREF = VDAC
−0.5
+0.5
mV
IFB
−1.0
+1.0
mA
ILLINE
−10
+10
nA
−82
mV
4.0
V
FB
LLINE Bias Current
LLINE Positioning Accuracy
VFB − VDAC
Measured on FB relative to
nominal VDAC
LLINE forced 80 mV below CSREF
−78
0.85
COMP Voltage Range
VCOMP
Voltage range of interest
COMP Current
ICOMP
COMP = 2 V, CSREF = VDAC
FB forced 200 mV below CSREF
FB forced 200 mV above CSREF
−80
−600
2.0
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
http://onsemi.com
3
mA
mA
NCP5380
ELECTRICAL CHARACTERISTICS VCC = 5 V, FBRTN = 112.5 mV, VVID = 1.25 V, TA = 0°C to 85°C, unless otherwise noted (Note 1).
Current entering a pin (sunk by the device) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VOLTAGE CONTROL VOLTAGE ERROR AMPLIFIER (VEAMP)
COMP Slew Rate
Gain Bandwidth (Note 2)
SRCOMP
GBW
CCOMP = 10 pF, CSREF = VDAC,
Open loop configuration
FB forced 200 mV below CSREF
FB forced 200 mV above CSREF
V/ms
15
−20
Non−inverting unit gain
configuration, RFB = 1 kW
20
MHz
VID DAC VOLTAGE REFERENCE
VDAC Voltage Range (Note 2)
VDAC Accuracy
See VID table
VFB − VDAC
Measured on FB (includes offset),
relative to nominal VDAC
VDAC = 0.5 V to 1.6000 V
VDAC = 0.3 V to 0.4875 V
VDAC Differential Nonlinearity
(Note 2)
VDAC Line Regulation
ΔVFB
VDAC Slew Rate
FBRTN Current
0
1.6
V
mV
−7
−9
+7
+9
−1
+1
VCC = 4.75 V to 5.25 V
Soft−start
Arbitrary VID step
IFBRTN
LSB
0.05
%
0.0625
1
LSB/
ms
70
200
mA
BOOT VOLTAGE
Boot Voltage
Vboot
Boot Voltage Timer
tboot
1.1
50
V
70
100
ms
0.5
0.3
V
VID DAC INPUTS
Input Low Voltage
Input High Voltage
Input Current
VIL
VID(x)
VIH
VID(x)
IIN(VID)
VID Transition Delay Time (Note 2)
0.7
Sink current
VID Code Change to FB Change
400
RIREF = 80 kW to Set IREF = 20 mA
1.55
0.5
V
1
mA
ns
REFERENCE CURRENT
IREF Voltage
VIREF
1.6
1.65
mA
3
MHz
OSCILLATOR
Frequency Range (Note 2)
Oscillator Frequency
fOSC
FOSC
0.3
TA = +25°C, VVID = 1.20 V,
Clocked PWM Mode
RT = 60 kW
900
1200
1500
RT = 120 kW
465
600
725
RT = 180 kW
300
400
500
1.08
1.2
1.35
RT Output Voltage
VRT
VVID = 1.6 V
RPM Output Current
IRPM
VVID = 1.250 V, RT = 500 kW
RAMP Input Voltage
VRAMP
RAMP Input Current Range
IRAMP
RAMP Input Current in Shutdown
kHz
−5
0.9
EN = high
1.0
V
mA
1.1
V
1
100
mA
EN = low or in UVLO, RAMP = 19 V
−0.5
+0.5
mA
CSFB − CSREF
−1.4
+1.4
mV
−50
+50
nA
CURRENT SENSE AMPLIFIER
Offset Voltage
Input Bias Current
VOS(CSA)
IBIAS(CSFB)
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
http://onsemi.com
4
NCP5380
ELECTRICAL CHARACTERISTICS VCC = 5 V, FBRTN = 112.5 mV, VVID = 1.25 V, TA = 0°C to 85°C, unless otherwise noted (Note 1).
Current entering a pin (sunk by the device) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
CURRENT SENSE AMPLIFIER
Gain Bandwidth Product (Note 2)
GBW(CSA)
Slew Rate (Note 2)
CCSCOMP = 10 pF
Input Common−Mode Range (Note 2)
CSFB and CSREF
Output Voltage Range
VCSCOMP
Output Current
ICSCOMP
20
MHz
10
V/ms
0
2
0.05
Source current
Sink current
2
V
V
−650
mA
1
mA
SWITCH AMPLIFIER
Common−Mode Range (Note 2)
Input Resistance
VSW
−400
RSW
0.8
1.5
+200
mV
2.0
kW
Zero Current Switching Threshold
VZCS(SW)
DCM Mode
−6
mV
DCM Minimum Off Time Masking
tOFFMASK
SW falling
700
ns
VILIM−
VCSCOMP
RILIMIT = 5 kW,
VCSREF − VCSCOMP = 100 mV
−70
−100
−130
mV
VILIM−
VCSCOMP
RILIMIT = 5 kW,
VCSREF − VCSCOMP = 0 mV
−1
0
1
mV
CURRENT LIMIT COMPARATOR
ILIM Voltage
Current Limit Latch Off Delay
From OCP Event to PWRGD De−
assertion
8
ms
From FB = 0V to FB = Vboot
1.4
ms
From EN POS Edge to FB = 50 mV
200
ms
SOFT−START
Soft−Start Time
tss
Soft−Start Delay
SOFT TRANSIENT CONTROL
Output Voltage Positive Slew Rate
Output Voltage Negative Slew Rate
Extended PWRGD Masking
Comparator Threshold
VTH(ST)
10
12.5
15
mV⁄ms
−10
−12.5
−15
mV⁄ms
|ST − VVID|, ST falling
150
mV
SYSTEM LOGIC INPUTS
Input Voltage
VEN
Refers to driving signal level
Logic low, Isink = 1 mA
Logic high, Isource = −5 mA
Input Current
IEN
0.3
0.7
V
V
VEN,VID[1:7] = 0 V
10
nA
0.2 V < VEN,VID[1:7] ≤ VCC
1
mA
POWER GOOD
CSREF Undervoltage Threshold
VUV(CSREF)
CSREF Overvoltage Threshold
VOV(CSREF)
CSREF Crowbar (Overvoltage
Protection) Threshold
VCB(CSREF)
FBRTN = 112.5 mV
CSREF Reverse Voltage Detection
Threshold
VRVP(CSREF)
CSREF falling
PWRGD Output Low Voltage
VOL(PWRGD)
PWRGD Output Leakage Current
For VID = 1.2 V
−360
−300
−240
mV
150
200
250
mV
1.5
1.55
1.6
V
−350
−300
mV
CSREF rising
−75
−5
mV
ISINK(PWRGD) = 4 mA
75
100
mV
0.5
mA
VPWRDG = 3.3 V
PWRGD Masking Time
100
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
http://onsemi.com
5
ms
NCP5380
ELECTRICAL CHARACTERISTICS VCC = 5 V, FBRTN = 112.5 mV, VVID = 1.25 V, TA = 0°C to 85°C, unless otherwise noted (Note 1).
Current entering a pin (sunk by the device) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
6
10
11
ms
11
mA
POWER GOOD
PWRGD delay Time
tPWRGD
CURRENT MONITOR
IMON Output Current
IIMON
VCSREF − VCSCOMP = 100 mV
9
10
IMON Output Current
IIMON
VCSREF − VCSCOMP = 10 mV
0.9
1
IMON Clamp
VIMON
1.0
1.1
mA
1.15
V
W
HIGH−SIDE MOSFET DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
Transition Times
Dead Delay Times
BST − SW = 4.6 V
1.6
3.3
BST − SW = 4.6 V
1.3
2.8
W
trDRVH,
BST − SW = 4.6 V, CL = 3 nF
15
35
ns
tfDRVH
BST − SW = 4.6 V, CL = 3 nF
13
31
ns
BST − SW = 4.6 V
20
45
ns
5
15
mA
tpdhDRVH
BST Quiescent Current
EN = low, shutdown
EN = high, no switching
200
mA
LOW−SIDE MOSFET DRIVER
Output Resistance, Sourcing Current
1.4
3.0
W
Output Resistance, Sinking Current
1
2.7
W
Transition Times
Propagation Delay Times
SW Transition Timeout
Zero−Crossing Threshold
trDRVL
CL = 3 nF
15
35
ns
tfDRVL
CL = 3 nF
14
35
ns
tpdhDRVL
CL = 3 nF
24
40
ns
250
450
ns
tTO(SW)
BST − SW = 4.6 V
150
VZC
PVCC Quiescent Current
1.5
EN = low, shutdown
14
EN = high, no switching
450
V
50
mA
mA
BOOTSTRAP RECTIFIER
Output Resistance
4.0
8.0
11
W
SOFT STOP
EN = low or latch off
CSREF Resistance to GND
70
W
5.5
V
SUPPLY
Supply Voltage Range (Note 2)
VCC
Normal mode
4.2
10
mA
EN = 0 V
60
200
mA
VCCOK
VCC rising
4.4
4.5
V
VCCUVLO
VCC falling
Supply Current
VCC OK Threshold Voltage
VCC UVLO Threshold Voltage
4.5
UVLO Hysteresis (Note 2)
4.0
4.2
V
250
mV
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
http://onsemi.com
6
NCP5380
Timing Diagram
Timing is referenced to the 90% and 10% points, unless otherwise noted.
IN
tpdlDRVL
tfDRVL
trDRVL
tpdlDRVH
DRVL
tpdhDRVH
trDRVH
VTH
DRVH
(WITH RESPECT
TO SW)
tfDRVH
VTH
tpdhDRVL
SW
Figure 3. Timing Diagram
ABSOLUTE MAXIMUM RATING
Parameter
Rating
VCC
−0.3 V to +6 V
FBRTN, PGND
−0.3 V to +0.3 V
BST
DC
−0.3 V to +26 V
t < 200 ns
−0.3 V to +31 V
BST to SW
DRVH, SW
−0.3 V to +6 V
DC
−5 V to +21 V
t < 200 ns
−10 V to +26 V
DRVH to SW
DRVL to PGND
RAMP (in Shutdown)
−0.3 V to +6 V
DC
−0.3 V to +6 V
t < 200 ns
−5 V to +6 V
DC
−0.3 V to +21 V
t < 200 ns
−0.3 V to +26 V
All Other Inputs and Outputs
−0.3 V to +6 V
Storage Temperature
−65°C to +150°C
Operating Ambient Temperature Range
−10°C to 100°C
Operating Junction Temperature
125°C
Thermal Impedance (θJA) 2−Layer Board
32.6°C/W
Lead Temperature
Soldering (10 sec)
300°C
Infrared (15 sec)
260°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
7
NCP5380
Pin Function Descriptions
Pin No.
Mnemonic
Description
1
PWRGD
Power−Good Output. Open−drain output. A low logic state means that the output voltage is outside of the
VID DAC defined range.
2
IMON
Current Monitor Output. This pin sources current proportional to the output load current. A resistor connected to VSS Sense sets the current monitor gain.
3
N/C
4
FBRTN
Feedback Return Input/Output. This pin remotely senses the output voltage. It is also used as the ground
return for the VID DAC and the voltage error amplifier blocks. It is also used to adjust the no−load offset.
5
FB
6
COMP
Voltage Error Amplifier Feedback Input. The inverting input of the voltage error amplifier.
7
GND
Analog and digital signal ground.
8
ILIM
Current Limit Set pin. Connect a resistor between ILIM and CSCOMP to the current limit threshold.
9
IREF
This pin sets the internal bias currents. A 100 kW is connected from IREF to ground.
10
RPM
RPM Mode Timing Control Input. A resistor is connected from RPM to ground sets the RPM mode turn−on
threshold voltage.
11
RT
PWM Oscillator Frequency Setting Input. An external resistor from this pin to GND sets the PWM oscillator
frequency.
12
RAMP
PWM Ramp Slope Setting Input. An external resistor from the converter input voltage node to this pin sets
the slope of the internal PWM stabilizing ramp.
13
LLINE
Load Line Programming Input. The center point of a resistor divider connected between CSREF and
CSCOMP tied to this pin sets the load line slope.
14
CSREF
Current Sense Reference Input. This pin must be connected to the opposite side of the output inductor.
15
CSFB
Noninverting Input of the Current Sense Amplifier. The combination of a resistor from the switch node to
this pin and the feedback network from this pin to the CSCOMP pin sets the gain of the current sense
amplifier.
16
CSCOMP
17
GND
18
PGND
Low−Side Driver Power Ground. This pin should be connected close to the source of the lower
MOSFET(s).
19
DRVL
Low−Side Gate Drive Output.
20
PVCC
Power Supply Input/Output of Low−Side Gate Driver.
Voltage Error Amplifier Output and Frequency Compensation Point.
Current Sense Amplifier Output.
Analog and Digital Signal Ground.
21
SW
22
DRVH
Current Return For High−Side Gate Drive.
23
BST
High−Side Bootstrap Supply. A capacitor from this pin to SW holds the bootstrapped voltage while the
high−side MOSFET is on.
24
VCC
Power Supply Input/Output of the Controller.
25 to
31
VID7 to VID1
Voltage Identification DAC Inputs. A 7−bit word (the VID code) programs the DAC output voltage, the reference voltage of the voltage error amplifier without a load (see the VID code table, Table 4). In normal operation mode, the VID DAC output programs the output voltage to a value within the 0 V to 1.6 V range (with
FBRTN = 112.5 mV). The input is actively pulled down.
32
EN
Enable Input. Driving this pin low shuts down the chip, disables the driver outputs, and pulls PWRGD low.
Flag
PGND
High−Side Gate Drive Output.
High current power supply return via metal pad (flag) underneath package. Connect to pin 7.
http://onsemi.com
8
NCP5380
Typical Performance Characteristics
VVID = 1.5 V, TA = 20°C to 100°C, unless otherwise noted.
Output Voltage
Output Voltage
Switch Node
Switch Node
Inductor
Current
Inductor
Current
Low Side Gate Drive
Low Side Gate Drive
Figure 4. DCM Waveforms, 1 A Load Current
Figure 5. CCM Waveforms, 10 A Load Current
Output Voltage
Output Voltage
Switch Node
Switch Node
Load Current
Load Current
Figure 6. Load Transient, 2 A to 10 A, VIN = 19 V
Figure 7. Load Transient, 2 A to 10 A, VIN = 19 V
OUTPUT VOLTAGE
Output Voltage
VID 0
Figure 8. VID on the Fly, 1.25 V to 0.825 V
Figure 9. Output Ripple, 15 A Load, CX = 470 mF,
CZ = 44 mF
http://onsemi.com
9
NCP5380
Theory of Operation
Operation Modes
The NCP5380 is a ramp−pulse−modulated (RPM)
controller for synchronous buck power supply. The internal
7−bit VID DAC conforms to the Intel VR11 specifications.
The NCP5380 is a stable, high performance architecture that
includes
• High speed response at the lowest possible switching
frequency and minimal count of output decoupling
capacitors
• Minimized thermal switching losses due to lower
frequency operation
• High accuracy load line regulation
• High power conversion efficiency with a light load by
automatically switching to DCM operation
VRMP
IR = AR X IRAMP
Flip−Flop
+
S
+
5V
Q
VCC
Gate
Driver
RD
BST
BST
DRVH
CR
1V
The NCP5380 runs in RPM mode for the purpose of fast
transient response and high light load efficiency. During the
following transients, the NCP5380 runs in PWM mode:
• Soft start
• Soft transient: the period of 100 ms following any VID
change
• Current overload
400 ns
Q
S
RI
DRVH
IN
SW
DCM
DRVL
Flip−Flop
DRVL
Q
Q
LOAD
RD
R2
+
30 mV −
S
+
COMP
+
RA
CFB
CA
VDC
+ VCS
FB
R1
+
+
+ −
L
SW
FBRTN
R2
1V
R1
CSREF
−
S
+
-
+
LLINE
CSFB
CSCOMP
RCS
CB
CCS
RFB
Figure 10. RPM Mode Operation
http://onsemi.com
10
RPH
NCP5380
5V
VCC
Gate
Driver
IR = AR X IRAMP
BST
DRVH
Flip−Flop
Clock
Oscillator
S
+
-
CR
Q
IN
SW
DRVL
RD
BST
RI
DRVH
L
SW
DRVL
LOAD
VCC
AD
+
+ −
0.2 V
S
+
-
Ramp
COMP
+
CA
CFB
VDC
+ VCS
FB
RA
CSREF
FBRTN
−
S
+
-
+
LLINE
CSFB
CSCOMP
RCS
CB
RPH
CCS
RFB
Figure 11. PWM Mode Operation
Setting Switch Frequency
Master Clock Frequency in PWM Mode
maintain the output voltage for a worst−case scenario within
±8 mV of the full operating output voltage and temperature
range.
The output voltage is sensed between the FB and FBRTN
pins. FB should be connected through a resistor to the
positive regulation point. FBRTN should be connected
directly to the negative remote sensing point. The internal
VID DAC and precision voltage reference are referenced to
FBRTN thus allowing no load offset to be set using this pin.
When the NCP5380 runs in PWM, the clock frequency is
set by an external resistor connected from the RT pin to
GND. The frequency varies with the VID voltage: the lower
the VID voltage, the lower the clock frequency. The
variation of clock frequency with VID voltage maintains
constant output ripple and improves power conversion
efficiency at lower VID voltages.
Switching Frequency in RPM Mode
When the NCP5380 operates in RPM mode, its switching
frequency is controlled by the ripple voltage on the COMP
pin. Each time the COMP pin voltage exceeds the RPM pin
voltage threshold level determined by the VID voltage and
the external resistor connected between RPM and ground, an
internal ramp signal is started and DRVH is driven high. The
slew rate of the internal ramp is programmed by the current
entering the RAMP pin. One−third of the RAMP current
charges an internal ramp capacitor (5 pF typical) and creates
a ramp. When the internal ramp signal intercepts the COMP
voltage, the DRVH pin is reset low.
In continuous current mode, the switching frequency of
RPM operation is almost constant. While in discontinuous
current conduction mode, the switching frequency is
reduced as a function of the load current.
Output Current Sensing
The NCP5380 includes a dedicated current sense
amplifier (CSA) to monitor the total output current of the
converter for proper voltage positioning vs. load current and
for overcurrent detection. Sensing the current delivered to
the load is an inherently more accurate method than
detecting peak current or sampling the current across a sense
element, such as the low−side MOSFET. The current sense
amplifier can be configured several ways, depending on
system optimization objectives, and the current information
can be obtained by
• Output inductor ESR sensing without the use of a
thermistor for the lowest cost
• Output inductor ESR sensing with the use of a
thermistor that tracks inductor temperature to improve
accuracy
• Discrete resistor sensing for the highest accuracy
At the positive input of the CSA, the CSREF pin is
connected to the output voltage. At the negative input (that
is, the CSFB pin of the CSA), signals from the sensing
Differential Sensing of Output Voltage
The NCP5380 combines differential sensing with a high
accuracy VID DAC, referenced by a precision band gap
source and a low offset error amplifier, In steady−state
mode, the combination of the VID DAC and error amplifier
http://onsemi.com
11
NCP5380
element (in the case of inductor DCR sensing, signals from
the switch node side of the output inductors) are connected
with a resistor. The feedback resistor between the CSCOMP
and CSFB pins sets the gain of the current sense amplifier,
and a filter capacitor is placed in parallel with this resistor.
The current information is then given as the voltage
difference between the CSCOMP and CSREF pins. This
signal is used internally as a differential input for the current
limit comparator.
An additional resistor divider connected between the
CSCOMP and CSREF pins with the midpoint connected to
the LLINE pin can be used to set the load line. The current
information to set the load line is then given as the voltage
difference between the LLINE and CSREF pins. This
configuration allows the load line slope to be set
independent from the current limit threshold. If the current
limit threshold and load line do not have to be set
independently, the resistor divider between the CSCOMP
and CSREF pins can be omitted and the CSCOMP pin can
be connected directly to LLINE. To disable voltage
positioning entirely (that is, to set no load line), LLINE
should be tied to CSREF.
To provide the best accuracy for current sensing, the CSA
has a low offset input voltage and the sensing gain is set by
an external resistor ratio.
a voltage rail − not necessarily the same VCC voltage rail
that is running the controller. A logic high level indicates
that the output voltage is within the voltage limits defined by
a range around the VID voltage setting. PWRGD goes low
when the output voltage is outside of this range.
Following the CPU specification, the PWRGD range is
defined to be 300 mV less than and 200 mV greater than the
actual VID DAC output voltage. To prevent a false alarm,
the power−good circuit is masked during any VID change
and during soft start. The duration of the PWRGD mask is
set to approximately 100 ms by an internal timer. In addition,
for a VID change from high to low, there is an additional
period of PWRGD masking before the internal DAC voltage
drops within 200 mV of the new lower VID DAC output
voltage, as shown in Figure 12.
Active Impedance Control Mode
Power−Up Sequence and Soft Start
VID SIGNAL
CHANGE
Internal DAC
VOLTAGE
200mV
PWRGD
MASK
100 ms
100
μs
100 ms
100μs
Figure 12. PWRGD Masking for VID Change
To control the dynamic output voltage droop as a function
of the output current, the signal that is proportional to the
total output current, converted from the voltage difference
between LLINE and CSREF, can be scaled to be equal to the
required droop voltage. This droop voltage is calculated by
multiplying the droop impedance of the regulator by the
output current. This value is used as the control voltage of
the PWM regulator. The droop voltage is subtracted from the
DAC reference output voltage, and the resulting voltage is
used as the voltage positioning setpoint. The arrangement
results in an enhanced feedforward response.
The power−on ramp−up time of the output voltage is set
internally. The power−up sequence is illustrated in
Figure 13.
VCC = 5 V
EN
VBOOT = 1.0 V
DAC AND VCORE
tBOOT
Voltage Control Mode
Figure 13. Power−Up Sequence for CPU
A high−gain bandwidth error amplifier is used for the
voltage mode control loop. The noninverting input voltage
is set via the 7−bit VID DAC. The noninverting input
voltage is offset by the droop voltage as a function of current,
commonly known as active voltage positioning. The output
of the error amplifier is the COMP pin, which sets the
termination voltage of the internal PWM ramps.
At the negative input, the FB pin is tied to the output sense
location using RB, a resistor for sensing and controlling the
output voltage at the remote sensing point. The main loop
compensation is incorporated in the feedback network
connected between the FB and COMP pins.
VID Change and Soft Transient
When a VID input changes, the NCP5380 detects the
change but ignores new code for a minimum of 400 ns. This
delay is required to prevent the device from reacting to digital
signal skew while the 7−bit VID input code is in transition.
Additionally, the VID change triggers a PWRGD masking
timer to prevent a PWRGD failure. Each VID change resets
and retriggers the internal PWRGD masking timer.
The NCP5380 provides a soft transient function to reduce
inrush current during VID transitions. Reducing the inrush
current helps decrease the acoustic noise generated by the
MLCC input capacitors and inductors.
The soft transient feature is implemented internally. When
a new VID code is detected, the NCP5380 steps sequentially
through each VID voltage to the final VID voltage.
Power−Good Monitoring
The power−good comparator monitors the output voltage
via the CSREF pin. The PWRGD pin is an open−drain
output that can be pulled up through an external resistor to
http://onsemi.com
12
NCP5380
Current Limit, Short−Circuit, and
Latch−Off Protection
Light Load RPM DCM Operation
The NCP5380 operates in RPM mode. With higher loads,
the NCP5380 operates in continuous conduction mode
(CCM), and the upper and lower MOSFETs run
synchronously and in complementary phase. See Figure 15
for the typical waveforms of the NCP5380 running in CCM
with a 7 A load current.
The NCP5380 has an adjustable current limit set by the
RCLIM resistor. The NCP5380 compares a programmable
current−limit set point to the voltage from the output of the
current−sense amplifier. The level of current limit is set with
the resistor from the ILIM pin to CSCOMP. During
operation, the voltage on ILIM is equal to the voltage on
CSREF. The current through the external resistor connected
between ILIM and CSCOMP is then compared to the
internal current limit current Icl. If the current generated
through this resistor into the ILIM pin(Ilim) exceeds the
internal current−limit threshold current (Icl), the internal
current−limit amplifier controls the internal COMP voltage
to maintain the average output current at the limit.
Normally, the NCP5380 operates in RPM mode. During
a current overload, the NCP5380 switches to PWM mode.
With low impedance loads, the NCP5380 operates in a
constant current mode to ensure that the external MOSFETs
and inductor function properly and to protect the CPU. With
a low constant impedance load, the output voltage decreases
to supply only the set current limit. If the output voltage
drops below the power−good limit, the PWRGD signal
transitions. After the PWRGD single transitions, internal
waits 7 ms before latching off the NCP5380.
Figure 14 shows how the NCP5380 reacts to a current
overload.
OUTPUT VOLTAGE 20mV/DIV
4
INDUCTOR CURRENT 5A/DIV
2
SWITCH NODE 5V/DIV
3
LOW−SIDE GATE DRIVE 5V/DIV
1
1ms/DIV
Figure 15. Single−Phase Waveforms in CCM
With lighter loads, the NCP5380 enters discontinuous
conduction mode (DCM). Figure 16 shows a typical
single-phase buck with one upper FET, one lower FET, an
output inductor, an output capacitor, and a load resistor.
Figure 17 shows the path of the inductor current with the
upper FET on and the lower FET off. In Figure 18 the
high-side FET is off and the low-side FET is on. In CCM, if
one FET is on, its complementary FET must be off; however,
in DCM, both high- and low-side FETs are off and no current
flows into the inductor (see Figure 19). Figure 20 shows the
inductor current and switch node voltage in DCM.
In DCM with a light load, the NCP5380 monitors the
switch node voltage to determine when to turn off the
low-side FET. Figure 20 shows a typical waveform in DCM
with a 1 A load current. Between t1 and t2, the inductor
current ramps down. The current flows through the source
drain of the low-side FET and creates a voltage drop across
the FET with a slightly negative switch node. As the
inductor current ramps down to 0 A, the switch voltage
approaches 0 V, as seen just before t2. When the switch
voltage is approximately −6 mV, the low-side FET is turned
off.
Figure 20 shows a small, dampened ringing at t2. This is
caused by the LC created from capacitance on the switch
node, including the CDS of the FETs and the output inductor.
This ringing is normal.
The NCP5380 automatically goes into DCM with a light
load. Figure 21 shows the typical DCM waveform of the
NCP5380 with a 1 A load current. As the load increases, the
NCP5380 enters into CCM. In DCM, frequency decreases
with load current, and switching frequency is a function of
the inductor, load current, input voltage, and output voltage.
Figure 14. Current Overload
The latch−off function can be reset either by removing and
reapplying VCC or by briefly pulling the EN pin low.
During startup, when the output voltage is below 200 mV,
a secondary current limit is active. This is necessary because
the voltage swing of CSCOMP cannot extend below ground.
This secondary current limit clamp controls the minimum
internal COMP voltage to the PWM comparators to 1.5 V.
This limits the voltage drop across the low−side MOSFETs
through the current balance circuitry.
http://onsemi.com
13
NCP5380
Q1
DRVH
+ INPUT
− VOLTAGE
SWITCH
NODE
OUTPUT
VOLTAGE
L
Inductor
Current
Q2
C
DRVL
LOAD
Figure 16. Buck Topology
Switch
Node
Voltage
ON
L
+
−
OFF
C
LOAD
t0
t1
t2
t3
t4
Figure 20. Inductor Current and Switch Node in DCM
Figure 17. Buck Topology Inductor Current During
t0 and t1
OUTPUT VOLTAGE
4
20mV/DIV
OFF
SWITCH NODE
5V/DIV
L
+
−
2
ON
C
LOAD
INDUCTOR
CURRENT
3
Figure 18. Buck Topology Inductor Current During
t1 and t2
OFF
LOW−SIDE GATE DRIVE 5V/DIV
2ms/DIV
Figure 21. Single−Phase Waveforms in DCM with
1 A Load Current
L
Output Crowbar
+
−
OFF
5A/DIV
1
C
To protect the load and output components of the supply,
the DRVL output is driven high (turning the low−side
MOSFETs on) and DRVH is driven low (turning the
high−side MOSFETs off) when the output voltage exceeds
the CPU OVP threshold.
Turning on the low−side MOSFETs forces the output
capacitor to discharge and the current to reverse due to
current build up in the inductors. If the output overvoltage
is due to a drain−source short of the high−side MOSFET,
turning on the low−side MOSFET results in a crowbar
across the input voltage rail. The crowbar action blows the
fuse of the input rail, breaking the circuit and thus protecting
the CPU chipset from destruction.
When the OVP feature is triggered, the NCP5380 is
latched off. The latch−off function can be reset by removing
and reapplying VCC to the NCP5380 or by briefly pulling
the EN pin low.
LOAD
Figure 19. Buck Topology Inductor Current During
t2 and t3
http://onsemi.com
14
NCP5380
Reverse Voltage Protection
logic low, the NCP5380 shuts off. In shutdown mode, the
controller holds DRVH and DRVL low, shorts the capacitors
of the SS and PGDELAY pins to ground, and drives
PWRGD to low.
The user must adhere to proper power−supply sequencing
during startup and shutdown of the NCP5380. All input pins
must be at ground prior to removing or applying VCC, and
all output pins should be left in high impedance state while
VCC is off.
Very large reverse current in inductors can cause negative
output voltage, which is harmful to the chipset and other
output components. The NCP5380 provides a reverse
voltage protection (RVP) function without additional
system cost. The output voltage is monitored through the
CSREF pin. When the CSREF pin voltage drops to less than
−190 mV, the NCP5380 triggers the RVP function by setting
both DRVH and DRVL low, thus turning off all MOSFETs.
The reverse inductor currents can be quickly reset to 0 by
discharging the built−up energy in the inductor into the input
dc voltage source via the forward−biased body diode of the
high−side MOSFETs. The RVP function is terminated when
the CSREF pin voltage returns to greater than −150 mV.
Sometimes the crowbar feature inadvertently results in
negative voltage because turning on the low−side MOSFETs
results in a very large reverse inductor current. To prevent
damage to the chipset caused from negative voltage, the
NCP5380 maintains its RVP monitoring function even after
OVP latch−off. During OVP latch−off, if the CSREF pin
voltage drops to less than −190 mV, the low−side MOSFETs
is turned off by setting DRVL low. DRVL will be set high
again when the CSREF voltage recovers to greater than
+50 mV.
Figure 22 shows the reverse voltage protection function of
the NCP5380. The CSREF pin is disconnected from the
output voltage and pulled negative. As the CSREF pin drops
to less than −190 mV, the low−side and high−side FETs turn
off.
Output Current Monitor
The NCP5380 includes an output current monitor
function. The IMON pin outputs an accurate current that is
directly proportional to the output current. This current is
then run through a parallel RC connected from the IMON
pin to the FBRTN pin to generate an accurately scaled and
filtered voltage. The maximum voltage on IMON is
internally clamoed by the NCP5380 at 1.15 V.
Output Voltage No-load Offset Adjustment
The NCP5380 output voltage can be offset from the
nominal VID settings by adjusting one resistor value. The
following figure shows the components used for setting the
no-load output offset voltage.
VCC (pin 24)
Rofs
FBRTN (pin 4)
0.1 mF
−Vout Return
3
CSREF
Figure 23. Setting the Output Offset Voltage
The nominal VID table for the NCP5380 is based on the
voltage at FBRTN being 112.5 mV (Rofs nominal of
866 ohms). If it is desired to adjust the no-load output
voltage to be above or below VID, then the value of Rofs can
be changed. If we define the no-load offset from VID as
Vnlofs, then the following can be used to determine the value
for Rofs (given VCC = 5 V);
PWRGD
2
DRVH
4
1
20
DRVL
Figure 22. NCP5380 RVP Function
R ofs +
Output Enable and UVLO
For the NCP5380 to begin switching, the VCC supply
voltage to the controller must be greater than the VCCOK
threshold and the EN pin must be driven high. If the VCC
voltage is less than the VCCUVLO threshold or the EN pin is
ǒ
5
*1
0.1125 ) V nlofs
Ǔ
20
NOTE: The 20 ohm resistor and 0.1 mF capacitor nominal
values are fixed based on the design of the NCP5380 so only
Rofs should be adjusted for changing the no−load offset.
http://onsemi.com
15
NCP5380
VID Codes (FBRTN = 112.5 mV)
VID7
VID6
VID5
VID4
VID3
VID2
VID1
Output
0
0
0
0
0
0
1
1.6000
0
0
0
0
0
1
0
1.5875
0
0
0
0
0
1
1
1.5750
0
0
0
0
1
0
0
1.5625
0
0
0
0
1
0
1
1.5500
0
0
0
0
1
1
0
1.5375
0
0
0
0
1
1
1
1.5250
0
0
0
1
0
0
0
1.5125
0
0
0
1
0
0
1
1.5000
0
0
0
1
0
1
0
1.4875
0
0
0
1
0
1
1
1.4750
0
0
0
1
1
0
0
1.4625
0
0
0
1
1
0
1
1.4500
0
0
0
1
1
1
0
1.4375
0
0
0
1
1
1
1
1.4250
0
0
1
0
0
0
0
1.4125
0
0
1
0
0
0
1
1.4000
0
0
1
0
0
1
0
1.3875
0
0
1
0
0
1
1
1.3750
0
0
1
0
1
0
0
1.3625
0
0
1
0
1
0
1
1.3500
0
0
1
0
1
1
0
1.3375
0
0
1
0
1
1
1
1.3250
0
0
1
1
0
0
0
1.3125
0
0
1
1
0
0
1
1.3000
0
0
1
1
0
1
0
1.2875
0
0
1
1
0
1
1
1.2750
0
0
1
1
1
0
0
1.2625
0
0
1
1
1
0
1
1.2500
0
0
1
1
1
1
0
1.2375
0
0
1
1
1
1
1
1.2250
0
1
0
0
0
0
0
1.2125
0
1
0
0
0
0
1
1.2000
0
1
0
0
0
1
0
1.1875
0
1
0
0
0
1
1
1.1750
0
1
0
0
1
0
0
1.1625
0
1
0
0
1
0
1
1.1500
0
1
0
0
1
1
0
1.1375
0
1
0
0
1
1
1
1.1250
0
1
0
1
0
0
0
1.1125
0
1
0
1
0
0
1
1.1000
0
1
0
1
0
1
0
1.0875
0
1
0
1
0
1
1
1.0750
0
1
0
1
1
0
0
1.0625
0
1
0
1
1
0
1
1.0500
http://onsemi.com
16
NCP5380
VID Codes (FBRTN = 112.5 mV)
VID7
VID6
VID5
VID4
VID3
VID2
VID1
Output
0
1
0
1
1
1
0
1.0375
0
1
0
1
1
1
1
1.0250
0
1
1
0
0
0
0
1.0125
0
1
1
0
0
0
1
1.0000
0
1
1
0
0
1
0
0.9875
0
1
1
0
0
1
1
0.9750
0
1
1
0
1
0
0
0.9625
0
1
1
0
1
0
1
0.9500
0
1
1
0
1
1
0
0.9375
0
1
1
0
1
1
1
0.9250
0
1
1
1
0
0
0
0.9125
0
1
1
1
0
0
1
0.9000
0
1
1
1
0
1
0
0.8875
0
1
1
1
0
1
1
0.8750
0
1
1
1
1
0
0
0.8625
0
1
1
1
1
0
1
0.8500
0
1
1
1
1
1
0
0.8375
0
1
1
1
1
1
1
0.8250
1
0
0
0
0
0
0
0.8125
1
0
0
0
0
0
1
0.8000
1
0
0
0
0
1
0
0.7875
1
0
0
0
0
1
1
0.7750
1
0
0
0
1
0
0
0.7625
1
0
0
0
1
0
1
0.7500
1
0
0
0
1
1
0
0.7375
1
0
0
0
1
1
1
0.7250
1
0
0
1
0
0
0
0.7125
1
0
0
1
0
0
1
0.7000
1
0
0
1
0
1
0
0.6875
1
0
0
1
0
1
1
0.6750
1
0
0
1
1
0
0
0.6625
1
0
0
1
1
0
1
0.6500
1
0
0
1
1
1
0
0.6375
1
0
0
1
1
1
1
0.6250
1
0
1
0
0
0
0
0.6125
1
0
1
0
0
0
1
0.6000
1
0
1
0
0
1
0
0.5875
1
0
1
0
0
1
1
0.5750
1
0
1
0
1
0
0
0.5625
1
0
1
0
1
0
1
0.5500
1
0
1
0
1
1
0
0.5375
1
0
1
0
1
1
1
0.5250
1
0
1
1
0
0
0
0.5125
1
0
1
1
0
0
1
0.5000
1
1
1
1
1
1
1
OFF
http://onsemi.com
17
NCP5380
APPLICATION INFORMATION
The design parameters for a typical VR11−compliant CPU
core VR application are as follows:
• Maximum Input Voltage (VINMAX) = 19 V
• Minimum Input Voltage (VINMIN) = 8 V
• Output Voltage by VID Setting (VVID) = 1.2375 V
• Maximum Output Current (IO) = 14 A
• Droop Resistance (RO) = 6.9 mW
• Nominal Output Voltage at 15 A Load
(VOFL) = 1.1409 V
• Static output voltage drop from no load to full load
(DV) = VONL − VOFL = 1.2375 V − 1.1409 V =
96.6 mV
• Maximum Output Current Step (DIO) = 11 A
• Number of Phases (n) = 1
• Switching Frequency (fSW) = 390 kHz
• Duty Cycle at Maximum Input Voltage (DMAX) =
0.15 V
• Duty Cycle at Minimum Input Voltage (DMIN) = 0.065
RR +
RR +
2
f sw
9 pF
* 16 kW
R DS
AD
0.5
3
VR +
VR +
The NCP5380 operates in fixed frequency PWM mode
during start up, for 100 ms after a VID change, and in current
limit. In PWM operation, the NCP5380 uses a
fixed−frequency control architecture. The frequency is set
by an external timing resistor (RT). The clock frequency
determines the switching frequency, which relates directly
to the switching losses and the sizes of the inductors and
input and output capacitors. For example, a clock frequency
of 300 kHz sets the switching frequency to 300 kHz. This
selection represents the trade−off between the switching
losses and the minimum sizes of the output filter
components. To achieve a 300 kHz oscillator frequency at a
VID voltage of 1.2 V, RT must be 391 kW. Alternatively, the
value for RT can be calculated by using the following
equation:
V VID ) 1.0 V
3
L
5
(eq. 2)
CR
360 nH
5.2 mW
5 pF
Where:
AR is the internal ramp amplifier gain.
AD is the current balancing amplifier gain.
RDS is the total low−side MOSFET ON−resistance,
CR is the internal ramp capacitor value.
Another consideration in the selection of RR is the size of
the internal ramp voltage (see Equation 3). For stability and
noise immunity, keep this ramp size larger than 0.5 V. Taking
this into consideration, the value of RR is selected as 280 kW.
The internal ramp voltage magnitude can be calculated
using:
SETTING THE CLOCK FREQUENCY FOR PWM
RT +
AR
0.5
(1 * D)
AR
RR
CR
(1 * 0.065)
462 kW
V VID
f sw
1.2375 V
5 pF
280 kHz
(eq. 3)
+ 0.89 V
The size of the internal ramp can be made larger or
smaller. If it is made larger, then stability and transient
response improves, but thermal balance degrades. Likewise,
if the ramp is made smaller, then thermal balance improves
at the sacrifice of transient response and stability. The factor
of three in the denominator of Equation 2 sets a minimum
ramp size that gives an optimal balance for good stability,
transient response, and thermal balance.
COMP PIN RAMP
In addition to the internal ramp, there is a ramp signal on
the COMP pin due to the droop voltage and output voltage
ramps. This ramp amplitude adds to the internal ramp to
produce the following overall ramp signal at the PWM
input:
(eq. 1)
V RT +
Where:
9 pF and 16 kW are internal IC component values.
VVID is the VID voltage in volts.
fSW is the switching frequency in hertz.
For good initial accuracy and frequency stability, it is
recommended to use a 1% resistor.
VR
1*
2
f
(1*D)
Cx R
(eq. 4)
O
Where CX is the total bulk capacitance, and RO is the droop
resistance of the regulator.
For this example, the overall ramp signal is 0.23 V.
SETTING THE SWITCHING FREQUENCY FOR RPM
OPERATION
RAMP RESISTOR SELECTION
During the RPM operation, the NCP5380 runs in
pseudoconstant frequency if the load current is high enough
for continuous current mode. While in DCM, the switching
frequency is reduced with the load current in a linear
manner. To save power with light loads, lower switching
The ramp resistor (RR) is used for setting the size of the
internal PWM ramp. The value of this resistor is chosen to
provide the best combination of thermal balance, stability,
and transient response. Use this equation to determine a
starting value:
http://onsemi.com
18
NCP5380
frequency is usually preferred during RPM operation.
However, the VCC ripple specification of VR11 sets a
limitation for the lowest switching frequency. Therefore,
depending on the inductor and output capacitors, the
switching frequency in RPM can be equal to, greater than,
or less than its counterpart in PWM.
A resistor from RPM to GND sets the pseudo constant
frequency as following:
R RPM +
2
RT
(1 * D)
AR
RR
V VID ) 1.0 V
CR
V VID
f sw
If the resultant ripple voltage is less than the initially
selected value, the inductor can be changed to a smaller
value until the ripple value is met. This iteration allows
optimal transient response and minimum output decoupling.
In this example, the iteration showed that a 560 nH inductor
was sufficient to achieve a good ripple.
The smallest possible inductor should be used to minimize
the number of output capacitors. Choosing a 560 nH
inductor is a good choice for a starting point, and it provides
a calculated ripple current of 6.6 A. The inductor should not
saturate at the peak current of 18.3 A, and it should be able
to handle the sum of the power dissipation caused by the
winding’s average current (15 A) plus the ac core loss.
Another important factor in the inductor design is the
DCR, which is used for measuring the inductor current. Too
large of a DCR causes excessive power losses, whereas too
small of a value leads to increased measurement error. For
this example, an inductor with a DCR of 1.3 mW is used.
(eq. 5)
* 0.5 kW
Where:
AR is the internal ramp amplifier gain.
CR is the internal ramp capacitor value.
RR is an external resistor on the RAMPADJ pin to set the
internal ramp magnitude.
Because RR = 280 kW, the following resistance sets up
300 kHz switching frequency in RPM operation.
R RPM +
2
Selecting a Standard Inductor
280 kW
After the inductance and DCR are known, select a
standard inductor that best meets the overall design goals. It
is also important to specify the inductance and DCR
tolerance to maintain the accuracy of the system. Using 20%
tolerance for the inductance and 15% for the DCR at room
temperature are reasonable values that most manufacturers
can meet.
1.2375 V ) 1.0 V
(1 * 0.065)
0.5
462 kW
5 pF
1.2375 V
300 kHz
* 500 W
+ 208 kW
INDUCTOR SELECTION
Power Inductor Manufacturers
The choice of inductance determines the ripple current of
the inductor. Less inductance results in more ripple current,
which increases the output ripple voltage and the conduction
losses in the MOSFETs. However, this allows the use of
smaller−size inductors, and for a specified peak−to−peak
transient deviation, it allows less total output capacitance.
Conversely, a higher inductance results in lower ripple
current and reduced conduction losses, but it requires
larger−size inductors and more output capacitance for the
same peak−to−peak transient deviation. For a buck
converter, the practical value for peak−to−peak inductor
ripple current is less than 50% of the maximum dc current
of that inductor. Equation 6 shows the relationship between
the inductance, oscillator frequency, and peak−to−peak
ripple current. Equation 7 can be used to determine the
minimum inductance based on a given output ripple voltage.
IR +
Lw
ǒ1 * D MINǓ
V VID
RO
f sw
Output Droop Resistance
The design requires that the regulator output voltage
measured at the chipset pins decreases when the output
current increases. The specified voltage drop corresponds to
the droop resistance (RO).
The output current is measured by low−pass filtering the
voltage across the inductor or current sense resistor. The
filter is implemented by the CS amplifier that is configured
with RPH, RCS, and CCS. The output resistance of the
regulator is set by the following equations:
(eq. 6)
V RIPPLE
f sw
V VID
The following companies provide surface−mount power
inductors optimized for high power applications upon
request.
• Vishay Dale Electronics, Inc.
(605) 665−9301
• Panasonic
(714) 373−7334
• Sumida Electric Company
(847) 545−6700
• NEC Tokin Corporation
(510) 324−4110
ǒ1 * D MINǓ
(eq. 7)
V RIPPLE
In this example, RO is assumed to be the ESR of the output
capacitance, which results in an optimal transient response.
Solving Equation 7 for a 16 mV peak−to−peak output ripple
voltage yields:
Lw
1.2375 V
6.9 mW
390 kHz
(1 * 0.065)
16 mV
RO +
(eq. 8)
C CS +
+ 1.3 mH
http://onsemi.com
19
R CS
R PH
R SENSE
L
R SENSE
R CS
(eq. 9)
(eq. 10)
NCP5380
RTH(50°C)/RTH(25°C)) and B (B is
RTH(90°C)/RTH(25°C)). Note that the relative
value of the NTC is always 1 at 25°C.
3. Find the relative value of RCS required for each of
the two temperatures. The relative value of RCS is
based on the percentage of change needed, which
is initially assumed to be 0.39%/°C in this
example. The relative values are called r1 (r1 is
1/(1+ TC x (T1 − 25))) and r2 (r2 is 1/(1 + TC x
(T2 − 25))), where TC is 0.0039, T1 is 50°C, and
T2 is 90°C.
4. Compute the relative values for rCS1, rCS2, and rTH
by using the following equations:
Where RSENSE is the DCR of the output inductors.
Either RCS or RPH can be chosen for added flexibility.
Due to the current drive ability of the CSCOMP pin, the RCS
resistance should be greater than 100 kW. For example,
initially select RCS to be equal to 200 kW, and then use
Equation 10 to solve for CCS:
C CS +
560 nH
1.3 mW
200 kW
+ 2.2 nF
If CCS is not a standard capacitance, RCS can be tuned. In this
case, the required CCS is a standard value and no tuning is
required. For best accuracy, CCS should be a 5% NPO
capacitor.
Next, solve for RPH by rearranging Equation 9 as follows:
R PH w
1.3 mW
5.1 mW
r cs +
200 kW + 51.0 kW
ǒA * BǓ
A
r1
ǒ1 * BǓ
Inductor DCR Temperature Correction
Place as close
as possible to
nearest inductor
RTH
RC51
NCP5380
16
−
+
15
To Switch Node
RTH
CC51
RC52
ǒ 1 * AǓ
r1
r 2 * ǒ A * BǓ
(1 * A)
1
1*r
CS2
If the DCR of the inductor is used as a sense element and
copper wire is the source of the DCR, the temperature
changes associated with the inductor’s winding must be
compensated for. Fortunately, copper has a well−known
temperature coefficient (TC) of 0.39%/°C.
If RCS is designed to have an opposite but equal
percentage of change in resistance, it cancels the
temperature variation of the inductor’s DCR. Due to the
nonlinear nature of NTC thermistors, series resistors RCS1
and RCS2 (see Figure 24) are needed to linearize the NTC
and produce the desired temperature coefficient tracking.
r2 ) B
ǒ 1 * AǓ
r1 * B
r CS1 +
The standard 1% resistor for RPH is 51.1 kW.
ǒ1 * BǓ
r2 * A
r TH +
*r
A
1*rCS2
(1)
1
1*r
CS2
*r
1
CS2
5. Calculate RTH = rTH x RCS , and then select a
thermistor of the closest value available. In
addition, compute a scaling factor k based on the
ratio of the actual thermistor value used relative to
the computed one:
k+
R TH(ACTUAL)
(eq. 11)
R TH(CALCULATED)
6. Calculate values for RCS1 and RCS2 by using the
following equations:
To VOUT
Sense
R CS1 + R CS
Keep this path as
short as possible and
well away from the
Switch Node Lines
R CS2 + R CS
k
(eq. 12)
rCS1
ǒ(1 * k) ) ǒk
Ǔ
r CS2Ǔ
For example, if a thermistor value of 100 kW is selected
in Step 1, an available 0603−size thermistor with a value
close to RCS is the Vishay NTHS0603N04 NTC thermistor,
which has resistance values of A = 0.3359 and B = 0.0771.
Using the equations in Step 4, rCS1 is 0.359, rCS2 is 0.729,
and rTH is 1.094. Solving for rTH yields 219 kW, so a
thermistor of 220 kW would be a reasonable selection,
making k equal to 1.005. Finally, RCS1 and RCS2 are found
to be 72.2 kW and 146 kW. Choosing the closest 1% resistor
values yields a choice of 71.5 kW and 147 kW.
14
Figure 24. Temperature−Compensation Circuit
Values
The following procedure and expressions yield values for
RCS1, RCS2, and RTH (the thermistor value at 25°C) for a
given RCS value.
1. Select an NTC to be used based on its type and
value. Because the value needed is not yet
determined, start with a thermistor with a value
close to RCS and an NTC with an initial tolerance
of better than 5%.
2. Find the relative resistance value of the NTC at
two temperatures. The appropriate temperatures
will depend on the type of NTC, but 50°C and
90°C have been shown to work well for most types
of NTCs. The resistance values are called A (A is
Cout SELECTION
The required output decoupling for processors and
platforms is typically recommended by Intel. For systems
containing both bulk and ceramic capacitors, however, the
following guidelines can be a helpful supplement.
Select the number of ceramics and determine the total
ceramic capacitance (CZ). This is based on the number and
type of capacitors used. Keep in mind that the best location
to place ceramic capacitors is inside the socket; however, the
http://onsemi.com
20
NCP5380
Ensure that the ESL of the bulk capacitors (LX) is low
enough to limit the high frequency ringing during a load
change. This is tested using:
physical limit is twenty 0805−size pieces inside the socket.
Additional ceramic capacitors can be placed along the outer
edge of the socket. A combined ceramic capacitor value of
40 mF to 50 mF is recommended and is usually composed of
multiple 10 mF or 22 mF capacitors.
Ensure that the total amount of bulk capacitance (CX) is
within its limits. The upper limit is dependent on the VID
on−the−fly output voltage stepping (voltage step, VV, in
time, tV, with error of VERR); the lower limit is based on
meeting the critical capacitance for load release at a given
maximum load step, DIO. The current version of the VR11
specification allows a maximum VCC overshoot (VOSMAX)
of 10 mV more than the VID voltage for a step−off load
current.
ȡ
wȧ
ȢǒR
C x(MIN)
C x(MAX) v
L
O)
Ǹ
ȡ
ȧ
Ȣ
RO 2
ǒ
1 ) tv
Where k + − ln
DI
V VID
O
k
VV
RO
L
For typical 15 A applications, the N−channel power
MOSFETs are selected for one high−side switch and two
low−side switch. The main selection parameters for the
power MOSFETs are VGS(TH), QG, CISS, CRSS, and
RDS(ON). Because the voltage of the gate driver is 5 V,
logic−level threshold MOSFETs must be used.
The maximum output current, IO, determines the RDS(ON)
requirement for the low−side (synchronous) MOSFETs.
With conduction losses being dominant, the following
expression shows the total power that is dissipated in each
synchronous MOSFET in terms of the ripple current per
phase (IR) and the average total output current (IO):
(eq. 14)
Ǔ ȣȧ
2
* 1 * CZ
Ȥ
ǒ Ǔ
V ERR
VV
To meet the conditions of these expressions and the
transient response, the ESR of the bulk capacitor bank (RX)
should be less than two times the droop resistance, RO. If the
CX(MIN) is greater than CX(MAX), the system does not meet
the VID on−the−fly specifications and may require less
inductance. In addition, the switching frequency may have
to be increased to maintain the output ripple.
For example, if two pieces of 22 mF, 0805−size MLC
capacitors (CZ = 44 mF) are used during a VID voltage
change, the VCC change is 220 mV in 22 ms with a setting
error of 10 mV. If k = 3.1, solving for the bulk capacitance
yields:
C X(MIN) w
ǒ
560 nH
ǒ5.1 mWǓ ) 10 mV
8A
8A
* 44 mF
1.174 V
P SF + (1 * D)
ǒǸ
1)
560 nH
3.1 2
ǒ
22 ms
1.174 V
220 mV
Ǔ
3.1
5.1 mW
Ǔ
Ǔ
2
ǒ Ǔƫ
IR
) 1
12
h SF
2
RDSǒSFǓ
(eq. 16)
(1 * D)
L
V OUT
f sw
Knowing the maximum output current and the maximum
allowed power dissipation, the user can calculate the
required RDS(ON) for the MOSFET. For an 8−lead SOIC or
8−lead
SOIC−compatible
MOSFET,
the
junction−to−ambient (PCB) thermal impedance is 50°C/W.
In the worst case, the PCB temperature is 70°C to 80°C
during heavy load operation of the notebook, and a safe limit
for PSF is about 0.8 W to 1.0 W at 120°C junction
temperature. Therefore, for this example (15 A maximum),
the RDS(SF) per MOSFET is less than 18.8 mW for the
low−side MOSFET. This RDS(SF) is also at a junction
1.174 V
560 nH
h SF
IR +
220 mV
(5.1 mW) 2
ƪǒ
IO
where:
D is the duty cycle and is approximately the output voltage
divided by the input voltage.
IR is the inductor peak−to−peak ripple current and is
approximately:
+ 246 mF
C X(MAX) v
2 + 2.3 nH
POWER MOSFETS
V VID
V VID
(eq. 15)
Where:
Q is limited to the square root of 2 to ensure a critically
damped system.
LX is about 450 pH for the two SP capacitors, which is low
enough to avoid ringing during a load change. If the LX of
the chosen bulk capacitor bank is too large, the number of
ceramic capacitors may need to be increased to prevent
excessive ringing.
For this multimode control technique, an all ceramic
capacitor design can be used if the conditions of
Equations 13, 14, and 15 are satisfied.
(eq. 13)
z
OSMAX
Q2
(5.1 mW) 2
LX v 44 mF
VV
L
k2
V
ȣ
*C ȧ
Ǔ Ȥ
DI O
RO 2
LX v CZ
Ǔ
* 1 * 44 mF
+ 992 mF
Using two 220 mF Panasonic SP capacitors with a typical
ESR of 7 mW each yields CX = 440 mF and RX = 3.5 mW.
http://onsemi.com
21
NCP5380
temperature of about 120°C; therefore, the RDS(SF) per
MOSFET should be less than 13.3 mW at room temperature,
or 18.8 mW at high temperature.
Another important factor for the synchronous MOSFET
is the input capacitance and feedback capacitance. The ratio
of the feedback to input must be small (less than 10% is
recommended) to prevent accidentally turning on the
synchronous MOSFETs when the switch node goes high.
The high−side (main) MOSFET must be able to handle
two main power dissipation components: conduction losses
and switching losses. Switching loss is related to the time for
the main MOSFET to turn on and off and to the current and
voltage that are being switched. Basing the switching speed
on the rise and fall times of the gate driver impedance and
MOSFET input capacitance, the following expression
provides an approximate value for the switching loss per
main MOSFET:
P S(MF) + 2
f SW
V DS
IO
h MF
RG
h MF
P DRV +
P C(MF) + D
ƪǒ
h MF
Ǔ
2
1
)
12
ǒ Ǔƫ
IR
h MF
f sw
2
n
ǒnMF
Q QFM ) n SF
ƫ
Q GSFǓ ) I CC
(eq. 19)
V CC
where QGMF is the total gate charge for each main MOSFET,
and QGSF is the total gate charge for each synchronous
MOSFET.
The previous equation also shows the standby dissipation
(ICC times the VCC) of the driver.
Current Limit Setpoint
To select the current−limit set point, we need to find the
resistor value for RLIM. The current−limit threshold for the
NCP5380 is set when the current in RLIM is equal to the
internal reference current of 20 mA. The current in RLIM is
equal to the inductor current times RO. RLIM can be found
using the following equation:
R LIM +
C ISS (eq. 17)
I LIM
RO
(eq. 20)
20 mA
Where:
RLIM is the current limit resistor. RLIM is connected from the
ILIM pin to the CSCOMP pin.
RO is the output load line resistance.
ILIM is the current limit set point. This is the peak inductor
current that will trip current limit.
In this example, if choosing 20 A for ILIM, RLIM is 6.9 kW,
which is close to a standard 1% resistance of 6.98 kW.
The per−phase current limit described earlier has its limit
determined by the following:
Where:
nMF is the total number of main MOSFETs.
RG is the total gate resistance.
CISS is the input capacitance of the main MOSFET.
The most effective way to reduce switching loss is to use
lower gate capacitance devices.
The conduction loss of the main MOSFET is given by the
following equation:
IO
ƪ
2
R DS(MF)
(eq. 18)
I PHLIM ^
Where RDS(MF) is the on resistance of the MOSFET.
Typically, a user wants the highest speed (low CISS)
device for a main MOSFET, but such a device usually has
higher on resistance. Therefore, the user must select a device
that meets the total power dissipation (about 0.8 W to 1.0 W
for an 8−lead SOIC) when combining the switching and
conduction losses.
For example, an NTMFS4821N device can be selected as
the main MOSFET (one in total; that is, nMF = 1), with
approximately CISS = 1400 pF (maximum) and RDS(MF) =
8.6 mW (maximum at TJ = 120°C), and an NTMFS4846N
device can be selected as the synchronous MOSFET (two in
total; that is, nSF = 2), with RDS(SF) = 3.8 mW (maximum at
TJ = 120°C). Solving for the power dissipation per MOSFET
at IO = 15 A and IR = 5.0 A yields 178 mW for each
synchronous MOSFET and 446 mW for each main
MOSFET. A third synchronous MOSFET is an option to
further increase the conversion efficiency and reduce
thermal stress.
Finally, consider the power dissipation in the driver. This
is best described in terms of the QG for the MOSFETs and
is given by the following equation:
V COMP(MAX) * V R * V BIAS
AD
R DS(MAX)
)
IR
2
(eq. 21)
For the NCP5380, the maximum COMP voltage
(VCOMP(MAX)) is 3.3 V, the COMP pin bias voltage (VBIAS)
is 1.0 V, and the current balancing amplifier gain (AD) is 5.
Using a VR of 0.55 V, and a RDS(MAX) of 3.8 mW (low−side
on−resistance at 150°C) results in a per−phase limit of 85 A.
Although this number seems high, this current level can only
be reached with a absolute short at the output and the
current−limit latch−off function shutting down the regulator
before overheating occurs.
This limit can be adjusted by changing the ramp voltage
VR. However, users should not set the per−phase limit lower
than the average per−phase current (ILIM/n).
There is also a per−phase initial duty−cycle limit at
maximum input voltage:
D LIM + DMIN
V COMP(MAX) * V BIAS
VR
(eq. 22)
Current Monitor
The NCP5380 has an output current monitor. The IMON
pin sources a current proportional to the total inductor
http://onsemi.com
22
NCP5380
VOLTAGE ERROR
AMPLIFIER
current. A resistor, RMON, from IMON to FBRTN sets the
gain of the output current monitor. A 0.1 mF is placed in
parallel with RMON to filter the inductor current ripple and
high frequency load transients. Since the IMON pin is
connected directly to the CPU, it is clamped to prevent it
from going above 1.15 V.
The IMON pin current is equal to the RLIMtimes a fixed gain
of 10. RMON can be found using the following equation:
R MON +
1.15 V
10
RO
R LIM
I FS
REFERENCE
VOLTAGE
+
−
COMP
FB
RA
(eq. 23)
NCP5380
CA
CB
Where:
RMON is the current monitor resistor. RMON is connected
from IMON pin to FBRTN.
RLIM is the current limit resistor.
RO is the output load line resistance.
IFS is the output current when the voltage on IMON is at full
scale.
OUTPUT
VOLTAGE
CFB
RFB
Figure 25. Voltage Error Amplifier
GAIN
−20dB/DEC
−20dB/DEC
Feedback Loop Compensation Design
Optimized compensation of the NCP5380 allows the best
possible response of the regulator’s output to a load change.
The basis for determining the optimum compensation is to
make the regulator and output decoupling appear as an
output impedance that is entirely resistive over the widest
possible frequency range, including dc, and that is equal to
the droop resistance (RO). With the resistive output
impedance, the output voltage droops in proportion with the
load current at any load current slew rate, ensuring the
optimal position and allowing the minimization of the
output decoupling.
With the multimode feedback structure of the NCP5380,
it is necessary to set the feedback compensation so that the
converter’s output impedance works in parallel with the
output decoupling. In addition, it is necessary to compensate
for the several poles and zeros created by the output inductor
and decoupling capacitors (output filter).
A Type III compensator on the voltage feedback is
adequate for proper compensation of the output filter.
Figure 25 shows the Type III amplifier used in the
NCP5380. Figure 26 shows the locations of the two poles
and two zeros created by this amplifier.
0dB
fP1
fZ2 fZ1
fP2
FREQUENCY
Figure 26. Poles and Zeros of Voltage Error
The following equations give the locations of the poles
and zeros shown in Figure 26:
f Z1 +
2p
1
CA
f Z2 +
2p
1
C FB
f P1 +
f P2 +
(eq. 24)
RA
(eq. 25)
R FB
1
2pǒC A ) C BǓ
R FB
1
2p
RA
CB
CA
(eq. 26)
(eq. 27)
The expressions that follow compute the time constants for
the poles and zeros in the system and are intended to yield
an optimal starting point for the design; some adjustments
may be necessary to account for PCB and component
parasitic effects (see the Tuning Procedure for NCP5380
section):
RE + RO ) AD
)
TA + CX
2
L
RDS )
CX
RO
ǒRO * RȀǓ )
23
V RT
V VID
(1 * (n
T B + ǒR X ) RȀ * RO Ǔ
http://onsemi.com
RL
D))
(eq. 28)
V RT
V VID
LX
R O * RȀ
RO
RX
CX
(eq. 29)
(eq. 30)
NCP5380
V RT
TC +
TD +
ǒ
L*
A
V VID
CX
CX
D
R
2
DS
f
Ǔ
(eq. 31)
RE
C ST +
RO 2
CZ
change is controlled by the ST pin capacitance. The ST pin
capacitance is set to satisfy the slew rate for a fast exit as
follows:
ǒRO * RȀǓ ) CZ
(eq. 32)
RO
RA +
CB +
RO
TA
RE
RB
Set−Up and Test the Circuit
1. Build a circuit based on the compensation values
computed from the design spreadsheet.
2. Connect a dc load to the circuit.
3. Turn on the NCP5380 and verify that it operates
properly.
4. Check for jitter with no load and full load
conditions.
(eq. 34)
CA
Set the DC Load Line
TB
1. Measure the output voltage with no load (VNL)
and verify that this voltage is within the specified
tolerance range.
2. Measure the output voltage with a full load when
the device is cold (VFLCOLD). Allow the board
to run for ~10 minutes with a full load and then
measure the output when the device is hot
(VFLHOT). If the difference between the two
measured voltages is more than a few millivolts,
adjust RCS2 using Equation 39.
(eq. 35)
RB
C FB +
TUNING PROCEDURE FOR NCP5380
(eq. 33)
TC
TD
(eq. 36)
RA
The standard values for these components are subject to the
tuning procedure described in the Tuning Procedure for
NCP5380 section.
CIN Selection and Input Current
di/dt Reduction
In continuous inductor−current mode, the source current
of the high−side MOSFET is approximately a square wave
with a duty ratio equal to VOUT /VIN . To prevent large voltage
transients, use a low ESR input capacitor sized for the
maximum rms current. The maximum rms capacitor current
occurs at the lowest input voltage and is given by
I CRMS + D
1O
I CRMS + 0.15
(eq. 38)
SLEWRATE
Where:
7.5 mA is the source/sink current of the ST pin.
SLEWRATE is the voltage slew rate after a change in VID
voltage
and is defined as 10 mV/mA in the VR11 specification.
CST is 750 pF, and the closest standard capacitance is
680 pF.
Where:
R’ is the PCB resistance from the bulk capacitors to the
ceramics and is approximately 0.4 mW (assuming an 8−layer
motherboard).
RDS is the total low−side MOSFET for on resistance.
AD is 5.
VRT is 1.25 V.
LX is the ESL of the bulk capacitors (450 pH for the two
Panasonic SP capacitors).
The compensation values can be calculated as follows:
CA +
7.5 mA
Ǹ1 * 1
15 A
5.36
V NL * V FLCOLD
V NL * V FLHOT
(eq. 39)
3. Repeat Step 2 until no adjustment of RCS2 is
needed.
4. Compare the output voltage with no load to that
with a full load using 5 A steps. Compute the load
line slope for each change and then find the
average to determine the overall load line slope
(ROMEAS).
5. If the difference between ROMEAS and RO is more
than 0.05 mW, use the following equation to adjust
the RPH values:
(eq. 37)
D
1
Ǹ0.15
*1
R CS2(NEW) + R CS2(OLD)
A
Where IO is the output current.
In a typical notebook system, the battery rail decoupling
is achieved by using MLC capacitors or a mixture of MLC
capacitors and bulk capacitors. In this example, the input
capacitor bank is formed by four pieces of 10 mF, 25 V MLC
capacitors, with a ripple current rating of about 1.5 A each.
R PH(NEW) + R PH(OLD)
R OMEAS
RO
(eq. 40)
6. Repeat Steps 4 and 5 until no adjustment of RPH is
needed. Once this is achieved, do not change RPH,
RCS1, RCS2, or RTH for the rest of the procedure.
7. Measure the output ripple with no load and with a
full load with scope, making sure both are within
the specifications.
SOFT TRANSIENT SETTING
As described in the Theory of Operation section, during
the soft transient, the slew rate of the VCC reference voltage
http://onsemi.com
24
NCP5380
Set the AC Load Line
Set the Initial Transient
1. Remove the dc load from the circuit and connect a
dynamic load.
2. Connect the scope to the output voltage and set it
to dc coupling mode with a time scale of
100 ms/div.
3. Set the dynamic load for a transient step of about
40 A at 1 kHz with 50% duty cycle.
4. Measure the output waveform (note that use of a
dc offset on the scope may be necessary to see the
waveform). Try to use a vertical scale of
100 mV/div or finer.
5. Do not measure the undershoot or overshoot that
occurs immediately after the step.
Figure 28. Transient Setting Waveform, Load Step
1. With the dynamic load set at its maximum step
size, expand the scope time scale to 2 ms/div to
5 ms/div. This results in a waveform that may have
two overshoots and one minor undershoot before
achieving the final desired value after VDROOP
(see Figure 28).
2. If both overshoots are larger than desired, try the
following adjustments in the order shown.
a. Increase the resistance of the ramp resistor
(RRAMP) by 25%.
b. For VTRAN1, increase CB or increase the
switching frequency.
c. For VTRAN2, increase RA by 25% and decrease
CA by 25%.
If these adjustments do not change the response, it is
because the system is limited by the output
decoupling. Check the output response and the
switching nodes each time a change is made to
ensure that the output decoupling is stable.
3. For load release (see Figure 29), if VTRANREL is
larger than the value specified by VR11, a greater
percentage of output capacitance is needed. Either
increase the capacitance directly or decrease the
inductor values. (If inductors are changed,
however, it will be necessary to redesign the
circuit using the information from the spreadsheet
and to repeat all tuning guide procedures).
Figure 27. AC Load Line Waveform
6. If the difference between VACDRP and VDCDRP is
more than a couple of millivolts, use Equation 42
to adjust CCS. It may be necessary to try several
parallel values to obtain an adequate one because
there are limited standard capacitor values
available (it is a good idea to have locations for
two capacitors in the layout for this reason).
C CS(NEW) + C CS(OLD)
V ACDRP
V DCDRP
(eq. 41)
7. Repeat Steps 5 and 6 until no adjustment of CCS is
needed. Once this is achieved, do not change CCS
for the rest of the procedure.
8. Set the dynamic load step to its maximum step size
(but do not use a step size that is larger than
needed) and verify that the output waveform is
square, meaning VACDRP and VDCDRP are equal.
9. Ensure that the load step slew rate and the
power−up slew rate are set to ~150 A/ms to
250 A/ms (for example, a load step of 50 A should
take 200 ns to 300 ns) with no overshoot. Some
dynamic loads have an excessive overshoot at
power−up if a minimum current is incorrectly set
(this is an issue if a VTT tool is in use).
Figure 29. Transient Setting Waveform, Load Release
http://onsemi.com
25
NCP5380
LAYOUT AND COMPONENT PLACEMENT
problems for the entire PC system as well as
noise−related operational problems in the
power−converter control circuitry. The switching
power path is the loop formed by the current path
through the input capacitors and the power
MOSFETs, including all interconnecting PCB
traces and planes. The use of short, wide
interconnection traces is especially critical in this
path for two reasons: it minimizes the inductance
in the switching loop, which can cause high energy
ringing, and it accommodates the high current
demand with minimal voltage loss.
2. When a power−dissipating component (for
example, a power MOSFET) is soldered to a PCB,
the liberal use of vias, both directly on the
mounting pad and immediately surrounding it, is
recommended. Two important reasons for this are
improved current rating through the vias and
improved thermal performance from vias extended
to the opposite side of the PCB, where a plane can
more readily transfer heat to the surrounding air.
To achieve optimal thermal dissipation, mirror the
pad configurations used to heat sink the MOSFETs
on the opposite side of the PCB. In addition,
improvements in thermal performance can be
obtained using the largest possible pad area.
3. The output power path should also be routed to
encompass a short distance. The output power path
is formed by the current path through the inductor,
the output capacitors, and the load.
4. For best EMI containment, a solid power ground
plane should be used as one of the inner layers and
extended under all power components.
The following guidelines are recommended for optimal
performance of a switching regulator in a PC system.
General Recommendations
1. For best results, use a PCB of four or more layers.
This should provide the needed versatility for
control circuitry interconnections with optimal
placement; power planes for ground, input, and
output; and wide interconnection traces in the rest
of the power delivery current paths. Keep in mind
that each square unit of 1 oz copper trace has a
resistance of ~0.53 mW at room temperature.
2. When high currents must be routed between PCB
layers, vias should be used liberally to create
several parallel current paths so that the resistance
and inductance introduced by these current paths is
minimized and the via current rating is not
exceeded.
3. If critical signal lines (including the output voltage
sense lines of the NCP5380) must cross through
power circuitry, it is best if a signal ground plane
can be interposed between those signal lines and
the traces of the power circuitry. This serves as a
shield to minimize noise injection into the signals
at the expense of increasing signal ground noise.
4. An analog ground plane should be used around
and under the NCP5380 for referencing the
components associated with the controller. This
plane should be tied to the nearest ground of the
output decoupling capacitor, but should not be tied
to any other power circuitry to prevent power
currents from flowing into the plane.
5. The components around the NCP5380 should be
located close to the controller with short traces.
The most important traces to keep short and away
from other traces are those to the FB and CSFB
pins. Refer to Figure 24 for more details on the
layout for the CSFB node.
6. The output capacitors should be connected as close
as possible to the load (or connector) that receives
the power (for example, a microprocessor core). If
the load is distributed, the capacitors should also
be distributed and generally placed in greater
proportion where the load is more dynamic.
7. Avoid crossing signal lines over the switching
power path loop, as described in the Power
Circuitry section.
Signal Circuitry
1. The output voltage is sensed and regulated
between the FB and FBRTN pins, and the traces of
these pins should be connected to the signal
ground of the load. To avoid differential mode
noise pickup in the sensed signal, the loop area
should be as small as possible. Therefore, the FB
and FBRTN traces should be routed adjacent to
each other, atop the power ground plane, and back
to the controller.
2. The feedback traces from the switch nodes should
be connected as close as possible to the inductor.
The CSREF signal should be Kelvin connected to
the center point of the copper bar, which is the
VCC common node for the inductor.
3. On the back of the NCP5380 package, there is a
metal pad that can be used to heat sink the device.
Therefore, running vias under the NCP5380 is not
recommended because the metal pad may cause
shorting between vias.
Power Circuitry
1. The switching power path on the PCB should be
routed to encompass the shortest possible length to
minimize radiated switching noise energy (that is,
EMI) and conduction losses in the board. Failure
to take proper precautions often results in EMI
http://onsemi.com
26
NCP5380
PACKAGE DIMENSIONS
QFN32 5*5*1 0.5 P
CASE 488AM−01
ISSUE O
A
B
D
ÉÉ
ÉÉ
PIN ONE
LOCATION
2X
0.15 C
2X
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM TERMINAL
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
E
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
TOP VIEW
0.15 C
(A3)
0.10 C
A
32 X
0.08 C
C
L
32 X
9
D2
SEATING
PLANE
A1
SIDE VIEW
MILLIMETERS
MIN
NOM MAX
0.800 0.900 1.000
0.000 0.025 0.050
0.200 REF
0.180 0.250 0.300
5.00 BSC
2.950 3.100 3.250
5.00 BSC
2.950 3.100 3.250
0.500 BSC
0.200
−−−
−−−
0.300 0.400 0.500
EXPOSED PAD
16
K
32 X
17
8
SOLDERING FOOTPRINT*
E2
5.30
1
24
32
3.20
25
b
0.10 C A B
32 X
e
32 X
0.63
0.05 C
BOTTOM VIEW
3.20
5.30
32 X
0.28
28 X
0.50 PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
27
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCP5380/D