1150MP 150 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 250 Watts Peak Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 60 Volts 4.0 Volts 6.0 Amps Peak - 65 to +150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS POUT PIN PG Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance ηc VSWR TEST CONDITIONS F= 1025-1150 MHz Vcc = 50 Volts PW = 10 µsec, DF = 1% MIN TYP 140 150 7.0 35 7.5 38 MAX UNITS W W dB % 30 F = 1090 MHz 10:1 FUNCTIONAL CHARACTERISTICS @ 25°C BVebo Emitter to Base Breakdown Ie = 1 mA BVces Collector to Emitter Breakdown Ic = 10mA Hfe DC Current Gain Vce = 5V, Ic = 500 mA Cob Output Capacitance Vcb = 50 V, f = 1 MHz Thermal Resistance Tc=25ºC θjc2 Note 1: At rated output power and pulse conditions 2: At rated pulse conditions 3.5 65 15 V V 120 16 0.6 pF C/W o Initial Issue June, 1994 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1150MP Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.