APT100GF60JR
600V
Fast IGBT
100A
E
E
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
27
2
T-
C
G
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
SO
"UL Recognized"
ISOTOP ®
C
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT100GF60JR
VCES
Collector-Emitter Voltage
600
VCGR
Collector-Gate Voltage (RGE = 20KW)
600
VGE
Gate-Emitter Voltage
±20
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 60°C
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
1
4
@ TC = 25°C
UNIT
Volts
100
100
Amps
280
I CM
Pulsed Collector Current
I LM
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
200
EAS
Single Pulse Avalanche Energy
2
85
mJ
PD
Total Power Dissipation
500
Watts
TJ,TSTG
TL
@ TC = 25°C
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Characteristic / Test Conditions
MIN
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
600
Gate Threshold Voltage
4.5
TYP
MAX
5.5
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
2.2
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
2.8
3.4
(VCE = VGE, I C = 700µA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
1.0
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
5.0
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
UNIT
Volts
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
052-6261 Rev - 5-2001
Symbol
APT100GF60JR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Capacitance
VGE = 0V
TYP
480
f = 1 MHz
300
Gate Charge
VGE = 15V
335
I C = I C2
195
Resistive Switching (25°C)
50
VGE = 15V
200
Rise Time
VCC = 0.66VCES
Turn-off Delay Time
I C = I C2
Fall Time
270
RG = 10W
50
Turn-on Delay Time
Rise Time
Turn-off Delay Time
170
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
95
I C = I C2
R G = 10W
6.3
Eoff
Turn-off Switching Energy
TJ = +150°C
5.2
Ets
Total Switching Losses
td(off)
tf
Rise Time
ns
400
VGE = 15V
Fall Time
Turn-on Delay Time
ns
190
Turn-on Switching Energy
tr
nC
L
A
C
I
N
H
C
N
E
T
IO
E
T
C MA
N
A OR
V
AD INF
Turn-on Delay Time
UNIT
pF
40
VCC = 0.5VCES
Eon
td(on)
MAX
4400
VCE = 25V
3
Qg
MIN
mJ
11.5
55
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
Turn-off Delay Time
180
VGE = 15V
I C = I C2
Fall Time
R G = 10W
90
Ets
Total Switching Losses
TJ = +25°C
10.5
gfe
Forward Transconductance
VCE = 20V, I C = I C2
ns
365
mJ
6
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RQJC
Junction to Case
RQJA
Junction to Ambient
WT
Torque
052-6261 Rev - 5-2001
Characteristic
MIN
TYP
MAX
UNIT
0.32
°C/W
Package Weight
40
1.03
oz
29.2
gm
10
lb•in
1.5
N•m
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 17µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT100GF60JR
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
* Emitter
Collector
052-6261 Rev - 5-2001
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter
Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058