APT20GF120BRD
1200V
32A
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
TO-247
G
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Parameter
Collector-Gate Voltage (RGE = 20KΩ)
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
I C2
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current
1
@ TC = 25°C
I CM2
Pulsed Collector Current
1
@ TC = 90°C
PD
Total Power Dissipation
UNIT
1200
1200
Volts
±20
32
20
Amps
64
40
IM
I CM1
A
VCGR
RY
APT20GF120BRD
Collector-Emitter Voltage
200
Watts
-55 to 150
EL
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
PR
TL
E
All Ratings: TC = 25°C unless otherwise specified.
VCES
TJ,TSTG
C
E
G
IN
Symbol
C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Characteristic / Test Conditions
MIN
TYP
MAX
5.5
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C)
2.7
3.2
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C)
3.3
3.9
1200
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
Gate Threshold Voltage
UNIT
4.5
(VCE = VGE, I C = 350µA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
1.0
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
6.0
±100
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Volts
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
052-6252 Rev A
Symbol
DYNAMIC CHARACTERISTICS (IGBT)
Test Conditions
Characteristic
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
Eon
Turn-on Delay Time
70
100
Gate Charge
VGE = 15V
95
150
13
20
I C = I C2
55
85
Resistive Switching (25°C)
17
VGE = 15V
75
A
VCC = 0.8VCES
Turn-off Delay Time
Turn-on Delay Time
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
PR
3
Rise Time
VGE = 15V
I C = I C2
3
Ets
Total Switching Losses
gfe
Forward Transconductance
35
70
190
275
90
135
1.2
1.8
ns
mJ
3.0
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
20
35
ns
160
I C = I C2
Fall Time
30
TJ = +150°C
VGE = 15V
Turn-off Delay Time
nC
ns
20
R G = 10Ω
3
Turn-on Delay Time
pF
170
RG = 10Ω
Fall Time
UNIT
99
I C = I C2
Total Switching Losses
tf
f = 1 MHz
Rise Time
Ets
td(off)
250
VCC = 0.5VCES
Turn-off Switching Energy
tr
165
2
Eoff
td(on)
1500
IN
tf
1100
IM
td(off)
MAX
VCE = 25V
EL
tr
TYP
Capacitance
VGE = 0V
Cies
td(on)
MIN
RY
Symbol
APT20GF120BRD
R G = 10Ω
90
TJ = +25°C
2.7
mJ
VCE = 20V, I C = 15A
12
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
RΘJC
RΘJA
WT
052-6252 Rev A
Torque
Characteristic
MIN
TYP
MAX
Junction to Case (IGBT)
0.63
Junction to Case (FRED)
0.90
°C/W
40
Junction to Ambient
Package Weight
UNIT
0.22
oz
6.1
gm
10
lb•in
1.1
N•m
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
See MIL-STD-750 Method 3471
3
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT20GF120BRD
PRELIMINARY
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
32
220
W
A
IC
160
140
24
20
RY
Ptot
180
120
16
12
80
IN
60
A
100
8
40
0
0
20
40
60
80
100
120
°C
PR
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 2
0
160
EL
TC
IM
4
20
0
20
40
60
80
100
120
°C
160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
t = 9.0µs
p
10 µs
A
K/W
IC
ZthJC
10 1
10 -1
100 µs
D = 0.50
0.20
1 ms
10 0
10 -2
0.10
0.05
0.02
single pulse
10 ms
0.01
DC
10
1
10
2
10
3
V
10 -3
-5
10
10
-4
10
-3
10
-2
VCE
10
-1
s 10
0
tp
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
USA
405 S.W. Columbia Street
052-6252 Rev A
10 -1
0
10
APT20GF120BRD
PRELIMINARY
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
16A
A
parameter: IC puls = 15
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
20
V
nF
VGE
16
C
600 V
800 V
10 0
Ciss
C
ies
RY
14
12
10
C
Coss
oes
A
8
10 -1
2
0
10
20
30
40
50
60
IM
4
0
C
Crss
res
IN
6
70
80
100
10 -2
0
5
10
15
20
25
30
EL
Q Gate
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH
ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = 15 V
PR
Short circuit safe operating area
10
2.5
ICsc
/IC(90°C)
ICsc
/IC2
I CC1
ICpulse
Cpuls//I
6
1.5
4
1.0
2
0.5
0
0.0
0
052-6252 Rev A
V
40
VCE
200
400
600
800
1000 1200
V
1600
VCE
0
200
400
600
800
1000 1200
V
1600
VCE
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
USA
405 S.W. Columbia Street
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
IC
30
30
A
A
24
22
20
17V
15V
13V
11V
9V
7V
IC
22
20
18
18
16
16
14
14
12
12
10
10
8
8
6
6
4
4
2
0
2
0
0
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
30
A
IC
24
24
22
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
V
14
VGE
0
17V
15V
13V
11V
9V
7V
1
2
3
V
5
VCE
APT20GF120BRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (FRED)
Symbol
VR
Characteristic / Test Conditions
APT20GF120BRD
UNIT
1200
Volts
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5)
30
RMS Forward Current
70
IFSM
Symbol
Characteristic / Test Conditions
IN
STATIC ELECTRICAL CHARACTERISTICS (FRED)
MIN
TYP
UNIT
IM
Volts
IF = 30A, TJ = 150°C
2.0
Maximum Reverse Leakage Current
VR = VR Rated
250
Maximum Reverse Leakage Current
VR = VR Rated, TJ = 125°C
500
EL
LS
2.0
IF = 60A
10
Series Inductance (Lead to Lead 5mm from Base)
PR
IRM
Maximum Forward Voltage
MAX
2.5
IF = 30A
VF
Amps
210
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
A
IF(RMS)
RY
VRRM
µA
nH
DYNAMIC CHARACTERISTICS (FRED)
Characteristic
MIN
TYP
MAX
85
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
70
trr2
Reverse Recovery Time
TJ = 25°C
70
trr3
IF = 30A, diF /dt = -240A/µs, VR = 650V
TJ = 100°C
160
tfr1
Forward Recovery Time
TJ = 25°C
255
tfr2
IF = 30A, diF /dt = 240A/µs, VR = 650V
TJ = 100°C
255
IRRM1
Reverse Recovery Current
TJ = 25°C
7
12
IRRM2
IF = 30A, diF /dt = -240A/µs, VR = 650V
TJ = 100°C
12
20
Qrr1
Recovery Charge
TJ = 25°C
660
Qrr2
IF = 30A, diF /dt = -240A/µs, VR = 650V
TJ = 100°C
1640
Vfr1
Forward Recovery Voltage
TJ = 25°C
15
Vfr2
IF = 30A, diF /dt = 240A/µs, VR = 650V
TJ = 100°C
20
Rate of Fall of Recovery Current
TJ = 25°C
245
IF = 30A, diF /dt = -240A/µs, VR = 650V (See Figure 10)
TJ = 100°C
160
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
052-6252 Rev A
Symbol
APT20GF120BRD
2400
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
80
60
TJ = 25°C
TJ = -55°C
0
800
15A
400
2.0
50
TJ = 100°C
VR = 650V
60A
30A
30
15A
20
10
250
200
60A
PR
30A
EL
TJ = 100°C
VR = 650V
150
15A
100
IM
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
50
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
1.6
Qrr
1.2
trr
IRRM
0.8
trr
Qrr
IN
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
40
0.4
0.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
-50
2000
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
30A
1200
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
60A
1600
100
TJ = 100°C
VR = 650V
IF = 30A
1600
80
Vfr
1200
60
800
40
400
20
tfr
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
1.0
D=0.5
0.2
0.1
0.1
0.05
0.05
NOTE:
0.02
0.01
SINGLE PULSE
0.01
PDM
ZΘJC, THERMAL IMPEDANCE
(°C/W)
052-6252 Rev A
0.5
t1
t2
0.005
DUTY FACTOR D = t1 / t2
PEAK TJ =PDM x Z JC + TC
0.001 -5
10
10-4
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
20
TJ = 100°C
2000
RY
40
TJ = 150°C
TJ = 100°C
VR = 650V
A
IF, FORWARD CURRENT
(AMPERES)
100
10-3
10-2
10-1
VR, REVERSE
VOLTAGE
(VOLTS)
RECTANGULAR
PULSE
DURATION
(SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
10
APT20GF120BRD
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
PR
EL
IM
IN
A
RY
+15v
diF /dt Adjust
0v
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
6.15 (.242) BSC
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
052-6252 Rev A
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
0.5 IRRM
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Collector
(Cathode)
Emitter
(Anode)