1
2
TO
-24
7
1 - Cathode
2 - Anode
Back of Case - Cathode
APT30DS30B
300V
30A
1
2
HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-247 Package
• Cooler Operation
• trr < 25ns @ 30 Amps
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Density
• Low Leakage Current
Characteristic / Test Conditions
APT30DS30B
UNIT
300
Volts
Y
R
A
N
I
M
I
L
E
R
P
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 100°C, Duty Cycle = 0.5)
30
RMS Forward Current
70
IF(RMS)
IFSM
TJ,TSTG
TL
Amps
320
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
-55 to 150
Operating and StorageTemperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
TYP
IRM
2.0
IF = 60A
Maximum Forward Voltage
Maximum Reverse Leakage Current
UNIT
2.0
IF = 30A
VF
MAX
Volts
IF = 30A, TJ = 150°C
1.75
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
µA
CT
Junction Capacitance, VR = 150V
70
pF
LS
Series Inductance (Lead to Lead 5mm from Base)
10
nH
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-5947 Rev - 1-2000
Symbol
APT30DS30B
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
45
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
35
trr2
Reverse Recovery Time
TJ = 25°C
20
trr3
IF = 30A, diF /dt = -500A/µs, VR = 180V
TJ = 100°C
35
tfr1
Forward Recovery Time
TJ = 25°C
45
tfr2
IF = 30A, diF /dt = 500A/µs, VR = 180V
TJ = 100°C
50
IRRM1
Reverse Recovery Current
TJ = 25°C
6.5
13.5
IRRM2
IF = 30A, diF /dt = -500A/µs, VR = 180V
TJ = 100°C
9.2
20
Qrr1
Recovery Charge
TJ = 25°C
75
Qrr2
IF = 30A, diF /dt = -500A/µs, VR = 180V
TJ = 100°C
160
Vfr1
Forward Recovery Voltage
TJ = 25°C
20
Vfr2
IF = 30A, diF /dt = 500A/µs, VR = 180V
TJ = 100°C
21
Rate of Fall of Recovery Current
TJ = 25°C
900
IF = 30A, diF /dt = -500A/µs, VR = 180V
TJ = 100°C
2000
UNIT
ns
Amps
nC
Y
R
A
N
I
M
I
L
E
R
P
diM/dt
Volts
A/µs
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
RqJC
Junction-to-Case Thermal Resistance
0.9
RqJA
Junction-to-Ambient Thermal Resistance
40
WT
Torque
UNIT
MAX
°C/W
0.22
oz
6.1
gm
Package Weight
10
lb•in
1.1
N•m
Maximum Mounting Torque (Screw Type = 6-32 or 3.5mm Machine)
1.0
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.01
SINGLE PULSE
NOTE:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
q
050-5947 Rev - 1-2000
0.5
t1
0.005
t2
DUTY FACTOR D = t1 / t2
PEAK TJ =PDM x Z JC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
APT30DS30B
360
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
40
TJ = 150°C
TJ = 100°C
30
20
TJ = 25°C
TJ = -55°C
10
0
0
0.5
1.0
1.5
2.0
2.5
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 2, Forward Voltage Drop vs Forward Current
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 4, Reverse Recovery Current vs Current Slew Rate
100
180
120
15A
60
2.0
Y
R
A
N
I
M
I
L
E
R
P
15A
4
60A
30A
60A
30A
8
240
2.5
TJ = 100°C
VR = 180V
12
300
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Charge vs Current Slew Rate
20
16
TJ = 100°C
VR = 180V
Qrr
1.5
trr
1.0
trr
IRRM
0.5
Qrr
0.0
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5, Dynamic Parameters vs Junction Temperature
2000
60
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
80
60A
30A
15A
40
20
40
TJ = 100°C
VR = 180V
IF = 30A
TJ = 100°C
VR = 180V
1500
30
Vfr
1000
20
500
10
tfr
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
IF, FORWARD CURRENT
(AMPERES)
50
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
0
100
10
0.01
0.05
0.1
Figure 8, Junction Capacitance vs Reverse Voltage
0.5
1
5
VR, REVERSE VOLTAGE (VOLTS)
10
50
100
200
050-5947 Rev - 1-2000
CJ, JUNCTION CAPACITANCE
(pico-FARADS)
1000
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
+15v
diF /dt Adjust
0v
-15v
Figure 9, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
Y
R
A
N
I
M
I
L
E
R
P
1
4
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Cathode
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
050-5947 Rev - 1-2000
Anode
2.21 (.087)
2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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