APT5010B2LC
APT5010LLC
500V 47A 0.100W
B2LC
POWER MOS VITM
T-MAX™
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize Ciss and
Crss. Lower gate charge coupled with Power MOS VITM optimized gate
layout, delivers exceptionally fast switching speeds.
• Identical Specifications: T-MAX™ or TO-264 Package
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching
MAXIMUM RATINGS
Symbol
VDSS
ID
TO-264
LLC
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5010
UNIT
500
Volts
Drain-Source Voltage
47
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
VGSM
PD
TJ,TSTG
188
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
°C
300
47
(Repetitive and Non-Repetitive)
1
Amps
50
mJ
4
2500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
Volts
47
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.100
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
UNIT
3
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-5900 Rev A 8-2000
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT5010B2LC - LLC
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
5375
6500
Coss
Output Capacitance
VDS = 25V
1040
1460
Crss
Reverse Transfer Capacitance
f = 1 MHz
185
280
Qg
Total Gate Charge
VGS = 10V
145
220
VDD = 0.5 VDSS
34
41
ID = ID[Cont.] @ 25°C
76
120
Qgs
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
12
24
VDD = 0.5 VDSS
15
30
ID = ID[Cont.] @ 25°C
28
42
RG = 0.6W
4.6
10.0
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
IS
MIN
47
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
(Body Diode)
188
(VGS = 0V, IS = -ID[Cont.])
1.3
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
UNIT
Amps
Volts
590
ns
13
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RqJC
Junction to Case
RqJA
Junction to Ambient
TYP
MAX
0.24
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 2.26mH, R = 25W, Peak I = 47A
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.05
0.2
0.1
0.05
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
q
050-5900 Rev A 8-2000
0.3
0.02
0.005
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
°C/W
APT5010B2LC - LLC
100
VGS= 8V, 10V & 15V
80
7.5V
60
7V
40
6.5V
20
6V
ID, DRAIN CURRENT (AMPERES)
5.5V
0
140
TJ = +25°C
TJ = +125°C
120
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
80
60
TJ = +125°C
40
TJ = +25°C
20
TJ = -55°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
60
7V
40
6.5V
20
6V
1.5
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.4
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
-50
1.2
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
7.5V
5.5V
0
2
4
6
8
10 12 14
16
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
8V
0
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
160
VGS= 10V & 15V
80
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5900 Rev A 8-2000
ID, DRAIN CURRENT (AMPERES)
100
APT5010B2LC - LLC
20,000
OPERATION HERE
LIMITED BY RDS (ON)
100
10,000
100µS
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
200
50
1mS
10
5
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
VDS=100V
16
VDS=250V
12
VDS=400V
8
4
0
1,000
500
Crss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = I [Cont.]
D
Coss
100
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
5,000
0
200
100
TJ =+150°C
50
TJ =+25°C
10
5
1
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
050-5900 Rev A 8-2000
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
Dimensions in Millimeters and (Inches)
5,045,903
4,748,103
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058