APT50M60L2VFR
500V 77A 0.060W
POWER MOS V ®
FREDFET
TO-264
Max
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• TO-264 MAX Package
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
D
G
• Fast Recovery Body Diode
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
APT50M60L2VFR
Parameter
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
500
Drain-Source Voltage
UNIT
Volts
77
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
825
Watts
Linear Derating Factor
6.6
W/°C
VGSM
PD
TJ,TSTG
308
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
77
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
Volts
77
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.060
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
2
µA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-5989 rev- 2-2001
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50M60L2VFR
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
12000
Coss
Output Capacitance
VDS = 25V
1600
Crss
Reverse Transfer Capacitance
f = 1 MHz
610
VGS = 10V
500
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
80
210
3
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
t d(on)
tr
t d(off)
tf
L
A
C
I
N
H
C
N
E
T
IO
E
T
C MA
N
A OR
V
AD INF
Gate-Drain ("Miller ") Charge
VGS = 15V
20
VDD = 0.5 VDSS
25
ID = ID [Cont.] @ 25°C
80
RG = 0.6W
8
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
Pulsed Source Current
VSD
Diode Forward Voltage
dt
TYP
Continuous Source Current (Body Diode)
ISM
dv/
MIN
Peak Diode Recovery
1
(Body Diode)
2
dv/
dt
(VGS = 0V, IS = -ID [Cont.])
5
MAX
77
308
UNIT
Amps
1.3
Volts
5
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Qrr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
2.6
Tj = 125°C
10
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
17
Tj = 125°C
34
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RqJC
Junction to Case
RqJA
Junction to Ambient
MIN
TYP
UNIT
0.15
40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.08mH, R = 25W, Peak I = 77A
j
G
L
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
Drain
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
050-5989 rev- 2-2001
MAX
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
°C/W