ADPOW APT60GF120JRD

APT60GF120JRD
1200V
100A
E
E
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
27
2
T-
C
G
SO
"UL Recognized"
ISOTOP ®
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
G
E
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (IGBT)
Symbol
Parameter
APT60GF120JRD
Collector-Emitter Voltage
1200
VCGR
Collector-Gate Voltage (RGE = 20KΩ)
1200
I C1
Continuous Collector Current @ TC = 25°C
I C2
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current
I CM2
Pulsed Collector Current
1
PD
Total Power Dissipation
@ TC = 90°C
UNIT
Volts
±20
100
60
Amps
200
120
520
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
EL
I
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
PR
TL
@ TC = 25°C
M
I CM1
1
A
Gate-Emitter Voltage
IN
VGE
RY
VCES
TJ,TSTG
C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Characteristic / Test Conditions
MIN
TYP
MAX
5.5
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C)
2.9
3.4
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C)
3.5
4.1
1200
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
Gate Threshold Voltage
4.5
(VCE = VGE, I C = 700µA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
UNIT
Volts
1.0
2
TBD
±100
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
052-6259 Rev A
Symbol
DYNAMIC CHARACTERISTICS (IGBT)
Test Conditions
Characteristic
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
Eon
Turn-on Delay Time
420
630
Gate Charge
VGE = 15V
690
55
Resistive Switching (25°C)
60
VGE = 15V
205
A
Turn-on Delay Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
PR
80
I C = I C2
R G = 5Ω
9
TJ = +150°C
10
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
55
145
R G = 5Ω
70
TJ = +25°C
17
Fall Time
4
Total Switching Losses
gfe
Forward Transconductance
VCE = 20V, I C = I C2
ns
650
I C = I C2
Ets
mJ
19
VGE = 15V
Turn-off Delay Time
ns
750
4
Turn-on Delay Time
ns
130
VGE = 15V
4
nC
55
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
Rise Time
pF
210
RG = 5Ω
Fall Time
UNIT
295
I C = I C2
Total Switching Losses
tf
f = 1 MHz
VCC = 0.8VCES
Ets
td(off)
1100
390
Turn-off Delay Time
Rise Time
790
I C = I C2
Rise Time
Turn-off Switching Energy
tr
9600
VCC = 0.5VCES
Eoff
td(on)
7200
IN
tf
3
IM
td(off)
MAX
VCE = 25V
EL
tr
TYP
Capacitance
VGE = 0V
Cies
td(on)
MIN
RY
Symbol
APT60GF120JRD
mJ
6
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
RΘJC
RΘJA
WT
052-6259 Rev A
Torque
Characteristic
MIN
TYP
MAX
Junction to Case (IGBT)
0.24
Junction to Case (FRED)
0.66
°C/W
40
Junction to Ambient
Package Weight
UNIT
1.03
oz
29.2
gm
10
lb•in
1.1
N•m
Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT60GF120JRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (FRED)
Symbol
VR
Characteristic / Test Conditions
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 60°C, Duty Cycle = 0.5)
1200
Volts
100
RY
RMS Forward Current
60
Amps
540
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS)
IN
A
IFSM
UNIT
Maximum D.C. Reverse Voltage
VRRM
IF(RMS)
APT60GF120JRD
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Characteristic / Test Conditions
MIN
IM
Symbol
TYP
2.0
IF = 120A
Volts
2.0
IF = 60A, TJ = 150°C
PR
EL
Maximum Forward Voltage
UNIT
2.5
IF = 60A
VF
MAX
DYNAMIC CHARACTERISTICS (FRED)
Characteristic
MIN
TYP
MAX
85
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
70
trr2
Reverse Recovery Time
TJ = 25°C
70
trr3
IF = 60A, diF /dt = -480A/µs, VR = 650V
TJ = 100°C
130
tfr1
Forward Recovery Time
TJ = 25°C
170
tfr2
IF = 60A, diF /dt = 480A/µs, VR = 650V
TJ = 100°C
170
IRRM1
Reverse Recovery Current
TJ = 25°C
18
30
IRRM2
IF = 60A, diF /dt = -480A/µs, VR = 650V
TJ = 100°C
29
40
Qrr1
Recovery Charge
TJ = 25°C
630
Qrr2
IF = 60A, diF /dt = -480A/µs, VR = 650V
TJ = 100°C
1820
Vfr1
Forward Recovery Voltage
TJ = 25°C
12
Vfr2
IF = 60A, diF /dt = 480A/µs, VR = 650V
TJ = 100°C
12
Rate of Fall of Recovery Current
TJ = 25°C
900
IF = 60A, diF /dt = -480A/µs, VR =650V
TJ = 100°C
600
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
052-6259 Rev A
Symbol
APT60GF120JRD
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
PR
EL
IM
IN
A
RY
+15v
diF /dt Adjust
0v
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Emitter
052-6259 Rev A
30.1 (1.185)
30.3 (1.193)
Collector
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter
Dimensions in Millimeters and (Inches)
Gate