MS1505 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 160 MHz 13.6 VOLTS POUT = 30 WATTS GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1505 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1505 utilizes an emitter ballasted die geometry to withstand severe load VSWR conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 36 18 36 4.0 8.0 70 +200 -65 to +150 V V V V A W °C °C 1.2 °C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7086 Rev - 10-2002 MS1505 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVCES BVCEO BVEBO ICBO hFE Test Conditions IC = 15mA IC = 50mA IE = 5mA VCB = 15V VCE = 5V VBE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 250mA Min. Value Typ. Max. Unit 36 18 4.0 --20 ----------- ------5 200 V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 160MHz PIN = 3.0W VCE = 13.6V 30 --- --- W GP f = 160MHz PIN = 3.0W VCE = 13.6V 10 --- --- dB COB f = 1MHz VCB = 15V --- --- 110 pf IMPEDANCE DATA FREQ 160 MHz PIN = 3.0 W VCE = 12.5V 053-7086 Rev - 10-2002 ZIN(Ω) ZCL(Ω) 1.0 +j0.4 2.3 + j0.1 MS1505 PACKAGE MECHANICAL DATA 053-7086 Rev - 10-2002