AEROFLEX ACT-S2M32C

ACT–F2M32A High Speed 64 Megabit
Sector Erase
FLASH Multichip Module
CIRCUIT TECHNOLOGY
Features
www.aeroflex.com/act1.htm
■ 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One
■ Ready/Busy output (RY/BY) – Hardware method for
MCM Package
■ Overall Configuration is 2M x 32
■ +5V Power Supply / +5V Programing Operation
■ Access Times of 90, 120 and 150 ns
■ Erase/Program Cycles – 100,000 Minimum
■ Sector erase architecture (Each Die)
● 32 uniform sectors of 64 Kbytes each
● Any combination of sectors can be erased. Also
supports full chip erase
● Sector group protection is user definable
■ Embedded Erase Algorithims – Automatically
pre-programs and erases the die or any sector
■ Embedded Program Algorithims – Automatically
programs and verifies data at specified address
detection of program or erase cycle completion
■ Hardware RESET pin – Resets internal state machine
to the read mode
■ Erase Suspend/Resume – Supports reading or
programming data to a sector not being erased
■ Packaging – Hermetic Ceramic
● 68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
■ Internal Decoupling Capacitors for Low Noise
Operation
■ Commercial, Industrial and Military Temperature
Ranges
■ MIL-PRF-38534 Compliant MCMs Available
Pin Description
Block Diagram – CQFP(F18)
Standard Configuration
CE1
I/O0-31
CE2
CE4 A0–20
CE3
RESET
WE
OE
A0 – A20
RY/BY
2Mx8
2Mx8
2Mx8
2Mx8
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
Data I/O
Address Inputs
WE
Write Enables
CE1-4
Chip Enables
OE
Output Enable
RY/BY
Ready/Busy
RESET
Reset
VCC
Power Supply
GND
Ground
NC
Not Connected
Block Diagram – CQFP(F18)
Pin Description
Optional Configuration
WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4
RESET
OE
A0 – A20
2Mx8
2Mx8
2Mx8
2Mx8
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
I/O0-31
Data I/O
A0–20
Address Inputs
WE1-4
Write Enable
CE1-4
Chip Enables
OE
Output Enable
RESET
Reset
VCC
Power Supply
GND
Ground
NC
Not Connected
General Description
Utilizing AMD’s Sector Erase
Flash
Memory
Die,
the
ACT-F2M32A is a high speed,
64
megabit
CMOS
flash
multichip
module
(MCM)
designed for full temperature
range, military, space, or high
reliability applications.
The ACT-F2M32A consists of
four high-performance AMD
Am29F016 16Mbit (16,777,216
bit) memory die. Each die
contains 8 separately write or
erase
sector
groups
of
256Kbytes (A sector group
consists of 4 adjacent sectors of
64Kbytes each).
The command register is
written by bringing WE to a logic
low level (VIL), while CE is low
and OE is high (VIH). Reading is
accomplished by chip Enable
(CE) and Output Enable (OE)
being logically active. Access
time grades of 90ns, 120ns and
150ns maximum are standard.
eroflex Circuit Technology - Advanced Multichip Modules © SCD1666A REV A 9/12/97
General Description, Cont’d,
The ACT-F2M32A is packaged in a hermetically sealed co-fired ceramic 68 lead, .94"
SQ Ceramic Gull Wing CQFP package. This allows operation in a military environment
temperature range of -55°C to +125°C.
The ACT-F2M32A can be programmed (both read and write functions) in-system using
the +5.0V VCC power supply. A 12.0V VPP is not required for programming or erase
operations. The end of program or erase is detected by the RY/BY pin, Data Polling of
DQ7, or by the Toggle bit (DQ6).
The ACT-F2M32A also has a hardware RESET pin. When this pin is driven low,
execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be
terminated.
Each block can be independently erased and programmed 100,000 times at +25°C.
For Detail Information regarding the operation of the Am29F016 Sector Erase Flash
Memory, see the AMD datasheet (Publication 18805).
Aeroflex Circuit Technology
2
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
Absolute Maximum Ratings
Parameter
Range
Units
Case Operating Temperature Range
-55 to +125
°C
Storage Temperature Range
-65 to +150
°C
-2.0 to +7.0
V
-2.0 to +13.5
V
Voltage with Respect to GND (All pins except A9)
Voltage on Pins A9, OE, RESET
(2)
Vcc Supply Voltage with Respect to Ground
Output Short Circuit Current
(1)
(1)
(3)
-2.0 to +7.0
V
200
mA
Notes:
1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on
input/output pins is VCC + 0.5V, which may overshoot to VCC + 2.0V for periods up to 20ns.
2. Minimum DC input voltage on A9 ,OE, RESET pins is -0.5V. During Voltage transitions, A9, OE & RESET may overshoot GND to -2.0V for periods up to 20ns.
Maximum DC input voltage on A9 is +12.5V which may overshoot to 14V for periods up to 20ns.
3. No more than one output shorted to ground for no more than 1 second.
NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. These are stress rating only; functional
operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.
Recommended Operating Conditions
Symbol
VCC
Parameter
Minimum
Maximum
+4.5
+5.5
V
0.7 x VCC
Vcc + 0.3
V
5V Power Supply Voltage (10%)
Units
VIH
Input High Voltage (CMOS)
VIL
Input Low Voltage
-0.5
+0.8
V
Operating Temperature (Military)
-55
+125
°C
TC
Capacitance
(f = 1MHz, TC = 25°C, Standard Configuration)
Symbol
Maximum
Units
CAD
A0 – A20 Capacitance
50
pF
COE
OE Capacitance
50
pF
CCE
CE Capacitance
20
pF
RESET Capacitance
50
pF
WE Capacitance
60
pF
RY/BY Capacitance
50
pF
I/O0 – I/O31 Capacitance
20
pF
CRESET
CWE
CRY/BY
C I/ O
Parameter
Capacitance Guaranteed by design, but not tested.
DC Characteristics – CMOS Compatible
(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter
Sym
Conditions
Min
Max
Units
10
µA
Input Load Current
IIL
VCC = VCCMax., VIN = VCC or GND
A9 Leakage Current
ILIT
VCC = VCCMax., A9 = +12V
50
µA
Output Leakage Current
ILO
VCC = VCCMax., VIN = GND to VCC
10
µA
Vcc Active Read Current
ICC1
CE = VIL, OE = VIH
160
mA
Vcc Active Program/Erase Current (1)
ICC2
CE = VIL, OE = VIH
240
mA
Vcc Standby Current
ICC3
VCC = VCCMax., CE = RESET = VCC ± 0.3V
4
mA
Vcc Standby Current (Reset)
ICC4
VCC = VCCMax., RESET = VCC ± 0.3V
4
mA
Output Low Voltage
VOL
VCC = VCCMin., IOL = 12 mA
0.45
V
Output High Voltage
Low VCC Lock-Out Voltage
VOH1
VCC = VCCMin., IOH = -2.5 mA
0.85 x
VCC
VOH2
VCC = VCCMin., IOH = -100 µA
VCC 0.4V
VLKO
3.2
4.2
V
V
V
Notes:
1. Not 100% tested.
Aeroflex Circuit Technology
3
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Characteristics – Write/Erase/Program Operations – WE Controlled
(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter
Parameter
Parameter
Symbol
Symbol
Standard
JEDEC
90ns
Min
120ns
Max
Min
150ns
Max
Min
Max
Units
Write Cycle Time
tWC
tAVAV
90
120
150
ns
Address Setup to WE Going Low
tAS
tAVWL
0
0
0
ns
Address Hold Time from CE High
tAH
tWLAX
45
50
50
ns
Data Setup to WE Going High
tDS
tDVWH
45
50
50
ns
tDH
tWHDX
0
0
0
ns
0
0
0
ns
10
10
10
ns
tGHWL
0
0
0
ns
Data Hold Time from WE High
Output Enable Hold Time
Read
Toggle Bit I and Data Polling
Read Recover Time Before Write
tOEH
tGHWL
(OE High to WE Low)
CE Setup Time from WE Low
tCS
tELWL
0
0
0
ns
CE Hold Time from WE High
tCH
tWHEH
0
0
0
ns
WE Pulse Width
tWP
tWLWH
45
50
50
ns
WE Pulse Width High
tWPH
tWHWL
20
20
20
ns
Byte Programming Operation
tWHWH1
tWHWH1
8
Sector Erase Operation
tWHWH2
tWHWH2
8
8
15
µs
15
15
Sec
VCC Set-Up Time
tVCS
50
50
50
µs
Rise Time to VID
tVIDR
500
500
500
ns
OE Setup Time to WE Active
tOESP
tRP
4
4
4
µs
500
500
500
ns
tBUSY
40
50
60
ns
Reset Pulse Width
Program/Erase Valid to RY/BY
Delay
Notes:
1. Not 100% tested.
AC Characteristics – Read Only Operations
(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter
Read Cycle Time
Parameter
Parameter
Symbol
Symbol
Standard
JEDEC
tRC
tAVAV
(1)
90ns
Min
Max
90
120ns
Min
Max
120
150ns
Min
Max
150
Units
ns
Address to Output Delay
tACC
tAVQV
90
120
150
ns
CE to Output Delay
tCE
tELQV
90
120
150
ns
OE to Output Delay
tOE
tGLQV
40
50
55
ns
CE to Output in High Z (1)
tDF
tEHQZ
20
30
35
ns
(1)
tDF
tGHQZ
20
35
ns
tOH
tAXQX
OE to Output in High Z
Output Hold from Addresses, CE or OE Change, Whichever Occurs
First
RESET Low to Read Mode (1)
tREADY
0
0
30
0
20
0
0
20
ns
20
µs
Notes:
1. Not 100% tested.
Aeroflex Circuit Technology
4
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Characteristics – Write/Erase/Program Operations – CE Controlled
(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter
Parameter
Symbol
Symbol
Standard
JEDEC
Write Cycle Time (1)
tWC
tAVAV
90
120
150
ns
Address Setup to CE Going Low
tAS
tAVEL
0
0
0
ns
Address Hold Time from CE Low
tAH
tELAX
45
50
50
ns
Data Setup to CE Going High
tDS
tDVEH
45
50
50
ns
tDH
tEHDX
0
0
0
ns
0
0
0
ns
0
0
0
ns
10
10
10
ns
Parameter
Data Hold Time from CE High
Output Enable Setup Time
(1)
Output Enable Hold Time (1)
Read Recover Time Before Write
tOES
Read
Toggle Bit I and Data Polling
tOEH
90ns
Min
Max
120ns
Min
Max
150ns
Min
Max
Units
tGHEL
tGHEL
0
0
0
ns
CE Setup Time from WE Low
tWS
tWLEL
0
0
0
ns
WE Hold Time from CE High
tWH
tEHWH
0
0
0
ns
WE Pulse Width
tCP
tELEH
45
50
50
ns
(OE High to WE Low)
tCPH
tELEL
20
20
20
ns
Byte Programming Operation
tWHWH1
tWHWH1
8
8
8
µs
Sector Erase Operation
tWHWH2
tWHWH2
WE Pulse Width High
15
15
15
Sec
Notes:
1. Not 100% tested.
Aeroflex Circuit Technology
5
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Test Circuit
Test Configuration Component Values
VCC
Test Configuration
CL
(pF)
R1
(Ω)
R2
(Ω)
3.3V Standard Test
50
990
770
5V Standard Test
50
580
390
R1
Device
Under
Test
NOTES:
CL includes jig capacitance.
OUT
CL
R2
Parameter
Typical
Units
Input Pulse Level
0 – 3.0
V
5
ns
1.5
V
Input Rise and Fall
Input and Output Timing Reference Level
AC Waveforms for Write and Erase Operations, WE Controlled
3rd Bus Cycle
Addresses
Data Polling
5555H
PA
tWC
tAS
PA
tAH
tRC
CE
tGHWL
OE
tWP
WE
tCS
tWHWH1
tWPH
Data
AOH
tDF
tOE
tDH
PD
DQ7
DOUT
tDS
tOH
+5 Volt
tCE
Aeroflex Circuit Technology
6
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Waveforms for Write and Erase Operations, CE Controlled
Data Polling
Addresses
5555H
PA
tWC
PA
tAH
tAS
WE
tGHEL
OE
tCP
CE
tWS
tWHWH1
tCPH
tDH
AOH
Data
PD
DQ7
DOUT
tDS
+5 Volt
AC Waveform For Read Operations
tRC
Addresses
Addresses Stable
tACC
CE
tDF
tOE
OE
tOEH
WE
tCE
tOH
Outputs
Aeroflex Circuit Technology
High Z
Output Valid
7
High Z
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
Pin Numbers & Functions
68 Pins — Dual-Cavity CQFP (Standard Configuration)
Pin #
Function
Pin #
Function
Pin #
Function
Pin #
Function
1
GND
18
GND
35
OE
52
GND
2
CE3
19
I/O8
36
CE2
53
I/O23
3
A5
20
I/O9
37
A17
54
I/O22
4
A4
21
I/O10
38
RY/BY
55
I/O21
5
A3
22
I/O11
39
NC
56
I/O20
6
A2
23
I/O12
40
NC
57
I/O19
7
A1
24
I/O13
41
A18
58
I/O18
8
A0
25
I/O14
42
A19
59
I/O17
9
RESET
26
I/O15
43
A20
60
I/O16
10
I/O0
27
VCC
44
I/O31
61
VCC
11
I/O1
28
A11
45
I/O30
62
A10
12
I/O2
29
A12
46
I/O29
63
A9
13
I/O3
30
A13
47
I/O28
64
A8
14
I/O4
31
A14
48
I/O27
65
A7
15
I/O5
32
A15
49
I/O26
66
A6
16
I/O6
33
A16
50
I/O25
67
WE
17
I/O7
34
CE1
51
I/O24
68
CE4
Consult Factory for Special order (Optional Configuration): Pin 38 - WE2, Pin 39 - WE3, Pin 40 - WE4 and Pin 67 - WE1
"F18" — CQFP Package
Pin 9
.990 SQ
±.010
.940 SQ
±.009
Pin 10
.140
MAX
Pin 61
Pin 60
.008
±.002
.010
±.008
.015
±.002
.040
.015
±.002
Detail “A”
.900 SQ
REF
.640 SQ
REF
Metal spacer
Pin 26
Pin 27
Pin 44
.800 REF
Pin 43
See Detail “A”
All dimensions in inches
Aeroflex Circuit Technology
8
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
CIRCUIT TECHNOLOGY
Ordering Information
Model Number
Screening
Speed
Package
ACT–F2M32A–090F18C
Commercial (0°C to +70°C)
90 ns
CQFP
ACT–F2M32A–120F18C
Commercial (0°C to +70°C)
120 ns
CQFP
ACT–F2M32A–150F18C
Commercial (0°C to +70°C)
150 ns
CQFP
ACT–F2M32A–090F18I
Industrial (-40°C to +85°C)
90 ns
CQFP
ACT–F2M32A–120F18I
Industrial (-40°C to +85°C)
120 ns
CQFP
ACT–F2M32A–150F18I
Industrial (-40°C to +85°C)
150 ns
CQFP
ACT–F2M32A–090F18M
Military (-55°C to +125°C)
90 ns
CQFP
ACT–F2M32A–120F18M
Military (-55°C to +125°C)
120 ns
CQFP
ACT–F2M32A–150F18M
Military (-55°C to +125°C)
150 ns
CQFP
ACT–F2M32A–090F18Q
DESC Drawing Pending
MIL-PRF-38534 Compliant
90 ns
CQFP
ACT–F2M32A–120F18Q
DESC Drawing Pending
MIL-PRF-38534 Compliant
120 ns
CQFP
ACT–F2M32A–150F18Q
DESC Drawing Pending
MIL-PRF-38534 Compliant
150 ns
CQFP
Part Number Breakdown
ACT– F 2M 32 A– 090 F18 M
Aeroflex Circuit
Technology
Screening
Memory Type
C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
M = Military Temp, -55°C to +125°C, Screened *
Q = MIL-PRF-38534 Compliant/SMD if applicable
S = SRAM
F = FLASH EEPROM
E = EEPROM
D = Dynamic RAM
Memory Depth, Locations
Package Type & Size
Surface Mount Packages
F18 = .94" SQ 68 Lead\Dual-Cavity CQFP
Memory Width, Bits
Pinout Options
A = One WE, RY/BY access on Pin 38 - Standard pinout
C = Four WE’s & RY/BY internally tied - Optional pinout
* Screened to the individual test methods of MIL-STD-883
Memory Speed, ns (+5V VCC)
Specifications subject to change without notice
Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11830
www.aeroflex.com/act1.htm
Aeroflex Circuit Technology
Telephone: (516) 694-6700
FAX:
(516) 694-6715
Toll Free Inquiries: (800) 843-1553
E-Mail: sales-act@aeroflex.com
9
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700