Advance Data Sheet January 1999 E2560/E2580-Type 10 Gbits/s EML Modules Features ■ Integrated electroabsorptive modulator ■ 1.5 µm wavelength ■ Characterized for 10 Gbits/s operation ■ For use up to 80 km at 10 Gbits/s ■ Low modulation voltage ■ Temperature stabilized ■ Available with and without integral driver IC ■ Wavelength selectable to ITU-T standards ■ Ultrastable wavelength aging for DWDM Applications ■ SONET/SDH applications ■ Ultrahigh capacity WDM system application ■ High-speed data communication ■ Digitized video Description The E2560 (without integral driver IC) and E2580 (with integral driver IC) are devices for 10 Gbits/s DWDM or TDM transmission applications, which integrate a CW laser with an electroabsorptive modulator in the same semiconductor chip, and are an extension of Lucent Technologies Microelectronics Groups’ existing E2500 series of devices. Both types use a small-profile Gilbert GPO connector to handle the RF signal. The device is typically coupled with a number of erbium-doped fiber amplifiers, such as Lucent Technologies' 1724-series, in order to ensure that sufficient optical power reaches the receiver. These devices can replace external modulators which are often bulkier, more expensive, and require more complex drive electronics than the EML. Both E2560 and E2580 are available for transmission distances of 40 km and 80 km. The package also contains a thermoelectric cooler, thermistor, rear facet monitor photodiode, and an optical isolator. Advance Data Sheet January 1999 E2560/E2580-Type 10 Gbits/s EML Modules Description (continued) The nominal input impedance of the E2560 version is 50 Ω. The package is qualified to the Bellcore TA-TSY000468 standard. Both E2560 and E2580 are available in a range of ITU-T wavelengths for use in DWDM systems operating at 10 Gbits/s per channel. The device has excellent wavelength stability, supporting operation at 100 GHz channel spacing over 20 years (assuming an end-of-life aging condition of <±100 pm). Typically, no external wavelength stabilization is required in systems of this type, using Lucent's E2500 series EMLs. The package also offers excellent stability of wavelength vs. case temperature, with a maximum coefficient of 0.5 pm/ °C. Module Characteristics Table 1. Module Characteristics Package Type E2560: 7-pin package with GPO connector RF input. E2580: 13-pin package with GPO connector RF input. Fiber Standard single-mode fiber. Connector ST ®; other connectors available on request. RF Input Impedance 50 Ω. Bit Rate 10 Gbits/s. Pin Information Table 2. Pin Descriptions E2560 Pin Abbreviation — — — — — — 7 6 5 4 3 2 1 — — — — — — E2580 Definition — — — — — — TEC– Themoelectric cooler– TEC+ Thermoelectric cooler+ BACK DET+ Monitor cathode (+) BACK DET– Monitor anode (–) LASER+ Laser anode THERM Thermistor THERM, LASER–, Combined thermistor/ CASE laser cathode/case Pin Abbreviation Definition 13 12 11 10 9 8 7 6 5 4 3 2 1 TEC– TEC+ VSS DCA OA NC NC VEA BACK DET+ BACK DET– LASER+ THERM THERM, LASER–, CASE Themoelectric cooler– Thermoelectric cooler+ Voltage supply to the IC Duty cycle adjust Optical amplitude adjust No connect/reserved No connect/reserved Modular offset (on-state) Monitor cathode (+) Monitor anode (–) Laser anode Thermistor Combined thermistor/ laser cathode/case Note: For full details of pin functions and required bias levels for the version with the IC, refer to E2580 EML with Integral Driver IC: Pin Definitions And Operation Application Note (TBD): 2 Lucent Technologies Inc. Advance Data Sheet January 1999 E2560/E2580-Type 10 Gbits/s EML Modules Target Specifications Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. Absolute Maximum Ratings Parameter Conditions Limit Unit CW CW CW — — — — — — 2 150 10 5 1 10 1 –40 to +85 –10 to +70 V mA mW V V V V °C °C Laser Diode Reverse Voltage Laser Diode Forward Current Optical Output Power Modulator Reverse Voltage Modulator Forward Voltage Monitor Diode Reverse Voltage Monitor Diode Forward Voltage Storage Temperature Operating Temperature Characteristics Table 4. Optical and Electrical Specifications (Chip operating temp. = 15 °C to 35 °C, except where noted.) Parameter Symbol Conditions Min Max Unit Threshold Current (BOL) Forward Voltage Operating Current Threshold Power Ith VF Iop Pth 5 — 50 — 35 2.2 100 80 mA V mA µW Fiber Output Power (Peak) Ppk 1 — dBm Peak Wavelength (Wavelength can be specified to the ITU wavelength channels.) Side-mode Suppression Ratio λ0 — If = Iop @ Top — If – Ith Vm = Iop Vm = 0 V If = Iop Vm = 0 V Tlaser chip = Top If = Iop 1530 1563 nm 30 — dB — 2.0 dB Dispersion Penalty BER = 10–10 SMSR DP Vm = 0 V If = Iop, Top 10 Gbits/s* Vlow = –1.5 to –3.0 V, Vhigh = 0 V to –1 V If = lop @ Top * Over 720 ps/nm (40 km version), 1440 ps/nm (80 km version). Lucent Technologies Inc. 3 Advance Data Sheet January 1999 E2560/E2580-Type 10 Gbits/s EML Modules Target Specifications (continued) Table 4. Optical and Electrical Specifications (Chip operating temp. = 15 °C to 35 °C, except where noted.)(continued) Parameter Modulator/Driver Extinction Ratio RF Return Loss (E2560) (0 GHz to 6 GHz) RF Return Loss (E2560) (6 GHz to 8 GHz) RF Return Loss (E2560) (8 GHz to 10 GHz) –3 dB Bandwidth (E2560) RF Return Loss (E2560) (0 GHz to 10 GHz) Input Voltage (E2580) (Peak to Peak) (ac coupled input) Rise/Fall Time (20%—80%) Monitor Diode Monitor Current Dark Current Capacitance Thermistor Resistance Thermistor Current Thermistor B Constant Thermoelectric Cooler TEC Current TEC Voltage TEC Power TEC Capacity Optical Isolation Optical Isolation Package Wavelength vs. Case Temp. Symbol Conditions Min Max Unit ERRF 11 — dB 10 — dB 7 — dB 5 — dB 11 — GHz 10 — dB VIN Vin = 0.5 Vp-p to 1.0 Vp-p 10 Gbits/s (E2580) Vm = 0 V to –2.5 V 10 Gbits/s (E2560) Vm = –1 V If = Iop Vm = –1 V If = Iop Vm = –1 V If = Iop Vm = –1 V If = Iop Vin = 0.5 Vp-p to 1.0 Vp-p 10 Gbits/s — 0.5 1.0 V tr/tf — — 40 ps Ibd Vbd = 5 V If = Iop Vbd = 5 V Vbd = 5 V f = 1 MHz 40 1100 µA — — 0.1 25 µA pF Rtherm Itc B T = 25 °C — — 9.5 10 3700 10.5 100 4100 kΩ µA — ITEC VTEC PTEC ∆T † — — — 55 1.1 2.6 2.9 — A V W C — † 30 — dB dλ/ dT Tcase = –10 °C to 70 °C — 0.5 pm/°C S11 S11 S11 BW S11 Id C † † † * Over 720 ps/nm (40 km version), 1440 ps/nm (80 km version). † Tcase = 70 °C, Tlaser chip = 15 °C to 35 °C (E2560), 20 °C to 35 °C (E2580). 4 Lucent Technologies Inc. Advance Data Sheet January 1999 E2560/E2580-Type 10 Gbits/s EML Modules Outline Diagram E2560: 0.020 (0.508) 0.100 (2.54) 0.291 (7.384) LEAD 1 LEAD 7 0.50 (12.7) MIN TRADEMARK CODE LASER SERIAL NUMBER AND DATE CODE LABEL IN AREA SHOWN BEND LIMITER 0.551 (13.99) 0.500 (12.7) 0.350 (8.89) ∅ 0.106 (2.7) PLACES 0.078 (1.98) 0.498 (12.64) 1.025 (26.04) E2580: 0.020 (0.51) 3 PLACES 0.190 (4.822) 0.215 (5.45) 0.050 (1.27) 12 PLACES 0.010 ± 0.002 (0.25 ± 0.064) 0.291 (7.38) LEAD 1 LEAD 13 50 (12.7) TRADEMARK CODE LASER SERIAL NUMBER AND DATE CODE LABEL IN AREA SHOWN BEND LIMITER 0.551 (13.99) 0.500 (12.7) 0.350 (8.89) 0.200 (5.08) ∅ 0.106 (2.7) 4 PLACES 0.498 (12.64) 1.025 (26.04) 0.190 (4.82) 0.078 (1.98) 2.032 (51.61) 0.180 (4.56) 0.820 (20.83) TBD 0.98 (2.5) 0.260 (6.6) 0.365 (9.27) 0.56 (1.42) 1.180 (29.97) 0.030 (0.75) 0.228 (5.78) 0.215 (5.47) CONNECTOR TYPE AS SPECIFIED 1-1006(F).r1 Lucent Technologies Inc. 5 Advance Data Sheet January 1999 E2560/E2580-Type 10 Gbits/s EML Modules Laser Safety Information Class IIIb Laser Product This product complies with 21 CFR 1040.10 and 1040.11. Single-mode connector Wavelength = 1.5 µm Maximum power = 10 mW Because of size constraints, laser safety labeling is not affixed to the module but attached to the outside of the shipping carton. Product is not shipped with power supply. Caution: Use of controls, adjustments, and procedures other than those specified herein may result in hazardous laser radiation exposure. For additional information, contact your Microelectronics Group Account Manager or the following: http://www.lucent.com/micro, or for Optoelectronics information, http://www.lucent.com/micro/opto INTERNET: [email protected] E-MAIL: N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA PACIFIC: Microelectronics Group, Lucent Technologies Singapore Pte. Ltd., 77 Science Park Drive, #03-18 Cintech III, Singapore 118256 Tel. (65) 778 8833, FAX (65) 777 7495 CHINA: Microelectronics Group, Lucent Technologies (China) Co., Ltd., A-F2, 23/F, Zao Fong Universe Building, 1800 Zhong Shan Xi Road, Shanghai 200233 P. R. China Tel. (86) 21 6440 0468, ext. 316, FAX (86) 21 6440 0652 JAPAN: Microelectronics Group, Lucent Technologies Japan Ltd., 7-18, Higashi-Gotanda 2-chome, Shinagawa-ku, Tokyo 141, Japan Tel. (81) 3 5421 1600, FAX (81) 3 5421 1700 EUROPE: Data Requests: MICROELECTRONICS GROUP DATALINE: Tel. (44) 1189 324 299, FAX (44) 1189 328 148 Technical Inquiries: OPTOELECTRONICS MARKETING: (44) 1344 865 900 (Ascot UK) Lucent Technologies Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. No rights under any patent accompany the sale of any such product(s) or information. ST is a registered trademark of Lucent Technologies Inc. Copyright © 1999 Lucent Technologies Inc. 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