Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Hermetic, Gold-ceramic Microstrip Package Description Hewlett-Packard’s AT-41470 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41470 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω at 1 GHz , makes this device easy to use as a low noise amplifier. 70 mil Package The AT-41470 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 4-119 5965-8927E AT-41470 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum[1] 1.5 20 12 60 500 200 -65 to 200 Units V V V mA mW °C °C Thermal Resistance [2,4]: θjc = 175°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 5.7 mW/°C for TC > 113°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz f = 4.0 GHz dB 12.0 6.5 P1 dB f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA 19.0 18.5 15.0 10.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA fT Gain Bandwidth Product: VCE = 8 V, IC = 25 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz Note: 1. For this test, the emitter is grounded. 4-120 dB dB 13.0 GHz — µA µA pF 1.3 1.6 3.0 18.5 14.5 10.5 1.9 8.0 30 150 0.2 300 0.2 1.0 AT-41470 Typical Performance, TA = 25°C GA 15 20 2.0 GHz 4.0 GHz 16 12 P1dB 2.0 GHz 8 9 4 NF50 Ω 3 NFO 0 0.5 1.0 2.0 2 G1 dB (dB) 6 6 0 3.0 4.0 5.0 8 4 4V 6V 10 V G1dB 1 0 10 20 30 40 0 4.0 GHz 4.0 GHz 6 4 2.0 GHz 2 0 30 40 IC (mA) Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 8 16 MSG |S21E|2 GAIN (dB) GAIN (dB) GA 20 40 20 30 10 30 35 12 0 20 Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. 40 NFO 10 IC (mA) Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 2.0 GHz 3 2 IC (mA) 16 GAIN (dB) 12 NFO 4 Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 10 GA 13 4.0 GHz FREQUENCY (GHz) 14 4V 14 12 NF (dB) GAIN (dB) 18 10 V 6V 15 25 20 15 |S21E|2 MAG 10 1.0 GHz 12 2.0 GHz 8 4.0 GHz 4 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. 4-121 0 0 10 20 30 40 IC (mA) Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 21 16 GAIN (dB) 24 P1 dB (dBm) 24 AT-41470 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .79 -37 28.4 26.27 157 0.5 .65 -120 22.3 13.05 110 1.0 .61 -155 17.1 7.17 88 1.5 .60 -172 13.9 4.93 76 2.0 .60 176 11.5 3.75 65 2.5 .61 169 9.7 3.06 59 3.0 .62 161 8.3 2.59 51 3.5 .61 154 7.0 2.24 42 4.0 .60 146 5.9 1.97 32 4.5 .60 137 4.9 1.77 24 5.0 .60 127 4.1 1.61 15 5.5 .61 115 3.4 1.47 6 6.0 .64 104 2.6 1.34 -4 dB -39.2 -30.8 -28.9 -27.5 -26.4 -26.0 -24.7 -23.2 -21.4 -20.1 -19.5 -18.3 -17.4 S12 Mag. .011 .029 .036 .042 .048 .050 .058 .069 .085 .099 .106 .121 .135 Ang. 57 40 41 46 46 58 61 63 62 59 59 56 53 Mag. .94 .62 .52 .50 .50 .48 .49 .51 .52 .55 .57 .58 .57 S22 dB S12 Mag. Ang. Mag. Ang. -40.9 -34.4 -30.2 -29.1 -27.1 -25.7 -23.6 -22.6 -21.7 -20.1 -18.9 -18.1 -17.3 .009 .019 .031 .035 .044 .052 .066 .074 .082 .099 .113 .124 .136 75 47 53 62 60 67 67 67 63 62 59 54 50 .85 .50 .44 .44 .44 .43 .44 .46 .48 .50 .52 .54 .53 -19 -30 -31 -34 -39 -39 -46 -55 -62 -68 -73 -78 -85 Ang. -13 -30 -32 -36 -40 -41 -48 -56 -63 -69 -75 -80 -87 AT-41470 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .64 .61 .61 .60 .61 .61 .62 .62 .62 .61 .60 .61 .64 -62 -146 -170 177 167 163 156 150 142 134 123 112 102 32.5 23.7 18.1 14.7 12.3 10.4 9.0 7.7 6.6 5.6 4.8 4.0 3.2 42.11 15.31 8.00 5.42 4.10 3.32 2.81 2.44 2.13 1.91 1.73 1.59 1.45 147 100 83 72 62 58 50 41 32 24 15 6 -3 A model for this device is available in the DEVICE MODELS section. AT-41470 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.2 1.2 1.3 1.6 3.0 Γopt Mag .12 .11 .06 .21 .45 Ang 5 17 35 160 -150 4-122 RN/50 0.17 0.17 0.17 0.16 0.20 S22 70 mil Package Dimensions .040 1.02 4 EMITTER .020 .508 BASE COLLECTOR 3 1 2 .004 ± .002 .10 ± .05 EMITTER .070 1.70 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 Package marking is “414” 4-123