AGILENT MSA-0910

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0910
Features
Description
• Broadband, Minimum Ripple
Cascadable 50 Ω Gain Block
The MSA-0910 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
high reliability package. This
MMIC is designed for very wide
bandwidth industrial and military
applications that require flat gain
and low VSWR.
• 8.0 ± 0.2 dB Typical Gain
Flatness from 0.1 to 4.0 GHz
• 3 dB Bandwidth:
0.1 to 6.0 GHz
• Low VSWR:
≤ 1.5:1 from 0.1 to 4.0␣ GHz
• 11.5 dBm Typical P1dB at
1.0␣ GHz
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
• Hermetic Gold-ceramic
Microstrip Package
Typical Biasing Configuration
R bias
VCC > 12 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9551E
OUT
MSA
Vd = 7.8 V
6-434
100 mil Package
MSA-0910 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum[1]
80 mA
750 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 145°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.9 mW/°C for TC > 91°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth[2]
VSWR
Input VSWR
Units
Min.
f = 0.1 GHz
dB
7.0
f = 0.1 to 4.0 GHz
dB
GHz
Typ.
8.0
9.0
± 0.2
± 0.5
6.0
f = 1.0 to 4.0 GHz
1.3:1
Output VSWR
f = 1.0 to 4.0 GHz
NF
50 Ω Noise Figure
f = 1.0 GHz
f = 4.0 GHz
dB
6.0
6.5
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
f = 4.0 GHz
dBm
11.5
6.5
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
23.0
tD
Group Delay
f = 1.0 GHz
psec
100
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Max.
1.5:1
V
mV/°C
7.0
7.8
8.6
–16.0
Notes:
1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz gain (G P).
6-435
MSA-0910 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.02
0.05
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
.31
.18
.12
.10
.10
.10
.10
.10
.10
.09
.07
.04
.06
.12
.19
.26
.32
.38
.43
–108
–114
–141
–166
170
156
145
133
111
88
89
90
145
152
142
131
120
109
99
10.6
8.8
8.1
7.9
7.8
7.8
7.8
7.8
7.9
8.0
8.2
8.2
8.2
8.0
7.5
6.9
6.2
5.3
4.4
3.38
2.75
2.53
2.47
2.46
2.45
2.46
2.46
2.49
2.51
2.58
2.58
2.57
2.50
2.38
2.21
2.04
1.84
1.65
150
160
166
167
163
157
151
144
127
110
96
78
59
40
22
4
–12
–27
–42
–13.8
–13.5
–13.4
–13.4
–13.3
–13.3
–13.3
–13.3
–13.2
–13.0
–12.8
–12.8
–12.7
–12.7
–13.0
–13.5
–14.1
–14.8
–15.6
.202
.212
.214
.215
.215
.216
.216
.217
.220
.224
.230
.230
.233
.230
.223
.211
.198
.181
.167
16
8
3
1
–1
–3
–4
–6
–10
–13
–16
–21
–27
–33
–40
–47
–52
–56
–59
.31
.20
.14
.13
.12
.13
.13
.14
.16
.18
.21
.20
.19
.16
.13
.09
.07
.13
.21
–107
–117
–139
–157
–165
–167
–168
–169
–173
177
167
151
137
125
116
118
160
–173
–172
0.85
1.06
1.16
1.19
1.20
1.20
1.19
1.19
1.17
1.15
1.11
1.11
1.11
1.12
1.16
1.22
1.28
1.38
1.46
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
12
50
9
10
TC = +125°C
TC = +25°C
40 T = –55°C
C
8
30
7
0.1 GHz
1.0
1.0 GHz,
GHz,
4.0
4.0 GHz
GHz
6
Gp (dB)
Id (mA)
G p (dB)
8
20
6
4
0
.05
0
0.1
0.3 0.5
1.0
3.0
6.0
4
0
2
4
10
10
12
13
P1 dB
30
50
Figure 3. Power Gain vs. Current.
7.0
I d = 45 mA
11
I d = 35 mA
NF (dB)
7
Gp (dB)
8
GP
40
6.5
9
7
20
I d (mA)
15
13
P1 dB (dBm)
P1 dB (dBm)
8
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Power Gain vs.
Frequency, Id = 35 mA.
NF (dB)
6
Vd (V)
FREQUENCY (GHz)
11
6.0 GHz
5
10
2
6.0
9
NF
I d = 45 mA
I d = 35 mA
5.5
6
7
I d = 25 mA
I d = 25 mA
5
4
–55 –25
+25
+85
+125
5
0.1
5.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 1.0 GHz, Id = 35 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-436
100 mil Package Dimensions
Outline 10A
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
3
1
2
.004 ± .002
.10 ± .05
GROUND
.100
2.54
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.030
.76
6-437