21–23 GHz GaAs MMIC Medium Power Amplifier AA022P2-00 ■ Single Bias Supply Operation (6 V) ■ 22 dBm Typical P1 dB Output Power at 23 GHz 3.268 Chip Outline 0.571 Features 1.700 1.572 1.576 ■ 14 dB Typical Small Signal Gain RF IN 0.850 ■ 0.25 µm Ti/Pd/Au Gates RF OUT ■ 100% On-Wafer RF and DC Testing Description Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 13 dB associated gain guaranteed across frequency range 21–23 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. 3.400 0.000 0.000 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 7 VDC Power In (PIN) 19 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 6 V) Parameter Condition Drain Current (at Saturation) Small Signal Gain Symbol Min. IDS F = 21–23 GHz G 12 Typ.2 Max. Unit 280 300 mA 14 dB Input Return Loss F = 21–23 GHz RLI -8 -6 Output Return Loss F = 21–23 GHz RLO -9 -7 Output Power at 1 dB Gain Compression F = 23 GHz P1 dB 19 22 dBm Saturated Output Power F = 23 GHz PSAT 21 23.5 dBm Gain at Saturation F = 23 GHz GSAT 11 dB ΘJC 69 °C/W Thermal Resistance1 dB dB 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A 1 21–23 GHz GaAs MMIC Medium Power Amplifier Typical Performance Data AA022P2-00 Circuit Schematic 20 15 S21 10 (dB) 5 0 S11 -5 S22 -10 Detail A -15 VDS -20 18 19 20 21 22 23 24 25 VDS 26 Frequency (GHz) Typical Small Signal Performance S-Parameters (VDS = 6 V IDS = 240 mA, TA = 25˚C) RF IN See Detail A Bias Arrangement 6V 50 pF RF IN .01 µF RF OUT For biasing on, adjust VDS from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure. 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A RF OUT