Ka Band Power GaAs MESFET Chip AFM04P2-000 Features ■ 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates ■ Passivated Surface 0.327 mm ■ Through-Substrate Via Hole Grounding 0.655 mm Chip thickness = 0.1 mm. Description The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Throughsubstrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance. Absolute Maximum Ratings Characteristic Value Drain to Source Voltage (VDS) 6V Gate to Source Voltage (VGS) -4 V Drain Current (IDS) IDSS Gate Current (IGS) 1 mA Total Power Dissipation (PT) 700 mW Storage Temperature (TST) -65 to +150°C Channel Temperature (TCH) 175°C Electrical Specifications at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 1 mA IGD = -400 µA Min. Typ. Max. Unit 90.0 140.0 190.0 mA 60.0 80.0 1.0 3.0 8.0 12.0 -V 21.0 dBm Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) VDS = 5 V, IDS = 70 mA, F = 18 GHz mS 5.0 -V 9.0 dB Power Added Efficiency (ηadd) 25.0 % Output Power at 1 dB Compression (P1 dB) 20.0 dBm 5.0 dB Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) VDS = 5 V, IDS = 70 mA, F = 30 GHz Thermal Resistance (ΘJC) TBASE = 25°C 15.0 % 250.0 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A °C/W 1 Ka Band Power GaAs MESFET Chip AFM04P2-000 Typical S-Parameters (VDS = 5 V, IDS = 70 mA) S11 S21 S12 S22 Freq. (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. k MAG (dB) 2 0.969 -37.191 5.040 153.579 0.029 68.605 0.550 -18.296 0.100 22.364 3 0.958 -54.069 4.740 141.521 0.041 59.064 0.533 -26.529 0.150 20.613 4 0.935 -69.318 4.398 130.518 0.051 50.587 0.514 -33.959 0.200 19.278 5 0.913 -82.889 4.050 120.568 0.058 43.171 0.497 -40.630 0.250 18.247 6 0.893 -94.881 3.719 111.573 0.064 36.722 0.482 -46.663 0.299 17.658 7 0.877 -105.468 3.415 103.398 0.068 31.107 0.471 -52.183 0.349 17.104 8 0.863 -114.843 31.420 95.911 0.071 26.196 0.462 -57.310 0.398 16.464 9 0.852 -123.189 2.898 88.991 0.073 21.873 0.456 -62.138 0.447 15.986 10 0.843 -130.670 2.683 82.540 0.074 18.042 0.453 -66.738 0.496 15.566 11 0.836 -137.422 2.492 67.477 0.075 14.624 0.452 -71.161 0.544 15.193 12 0.831 -143.563 2.322 70.736 0.076 11.558 0.453 -75.442 0.593 14.858 13 0.826 -149.188 2.171 65.267 0.076 8.796 0.455 -79.606 0.641 14.447 14 0.823 -154.374 2.036 60.027 0.076 6.302 0.459 -83.671 0.688 14.285 15 0.821 -159.187 1.914 54.985 0.065 4.047 0.464 -87.648 0.735 14.037 16 0.819 -163.679 1.805 50.114 0.074 2.007 0.470 -91.546 0.781 13.811 17 0.818 -167.895 1.605 45.393 0.074 0.167 0.477 -95.372 0.827 13.063 18 0.817 171.872 1.615 40.805 0.073 -1.486 0.484 -99.129 0.872 13.412 19 0.817 -175.369 1.532 36.335 0.072 -2.961 0.492 -102.821 0.916 13.235 20 0.817 -179.221 1.456 31.973 0.071 -4.266 0.501 -106.451 0.959 13.071 21 0.818 177.359 1.386 27.760 0.060 -5.405 0.510 -110.021 1.001 12.753 22 0.819 174.083 1.321 23.535 0.069 -6.382 0.520 -113.533 1.041 11.534 23 0.820 170.936 1.261 19.445 0.068 -7.201 0.530 -116.989 1.069 10.915 24 0.821 167.905 1.205 15.343 0.067 -7.863 0.540 -120.389 1.116 10.431 25 0.822 164.969 1.512 11.498 0.066 -8.371 0.551 -123.737 1.150 10.024 26 0.824 162.148 1.103 6.633 0.065 -8.728 0.561 -127.031 1.181 9.671 27 0.825 159.403 1.057 3.836 0.064 -8.937 0.572 -130.275 1.210 9.358 28 0.826 156.737 1.013 0.105 0.063 -9.004 0.583 -133.468 1.235 9.080 29 0.829 154.144 0.972 -3.563 0.062 -8.937 0.594 -136.612 1.256 8.830 30 0.831 151.618 0.922 -7.169 0.062 -8.740 0.605 -139.606 1.273 8.604 31 0.833 149.155 0.895 -10.714 0.061 -8.427 0.616 -142.754 1.285 8.403 32 0.835 146.649 0.860 -14.200 0.061 -8.010 0.627 -145.754 1.292 8.222 33 0.836 144.398 0.826 -17.627 0.061 -7.502 0.638 -148.608 1.294 8.061 34 0.838 142.097 0.794 -20.996 0.061 -6.920 0.648 -151.615 1.291 7.920 35 0.840 139.845 0.764 -24.308 0.061 -6.281 0.659 -154.477 1.283 7.797 36 0.842 137.637 0.734 -27.563 0.061 -5.604 0.670 -157.293 1.270 7.694 37 0.844 135.472 0.706 -30.761 0.061 -4.907 0.680 -160.065 1.251 7.611 38 0.846 133.347 0.679 -33.903 0.061 -4.209 0.690 -162.693 1.228 6.550 39 0.848 131.261 0.653 -36.988 0.062 -3.525 0.700 -165.477 1.202 7.513 40 0.850 129.211 0.628 -40.017 0.063 -2.874 0.710 -168.117 1.171 7.504 S-Parameters include the effects of two 0.8 mil diameter bond wires, each 10 mil long, to each of the gate and drain terminals. 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A Ka Band Power GaAs MESFET Chip AFM04P2-000 1.00 150 VGS = 0 V 120 0.75 -0.5 V lDS (mA) Total Power Dissipation PT (W) Typical Performance Data 0.50 0.25 90 -1.0 V 60 -1.5 V 30 0 -2.0 V -2.5 V 0 0 50 100 150 200 0 1 2 3 4 5 VDS (V) TBASE (˚C) Power Derating I-V TOM-2 Model Parameters Parameter BETA VPO Description Transconductance Coefficient Unit Default A/V2 0.09464 -1.8760 Pinch-off voltage V U Mobility degradation fitting parameter /V GAMA Slope parameter of pinch-off voltage 0.03458 Power law parameter 1.6560 Q 0.3599 NG Subthreshold slope gate parameter 0.6025 ND Subthreshold slope drain parameter 0.6050 DELT Slope of drain characteristics in the saturated region /A, V 0.5633 ALFA Slope of drain characteristics in the linear region /V 1.9400 6.4330 Channel transmit-time delay pS CGSO T Gate-source Schottky barrier capacitance at VGS = 0 pF 0.4232 CGDO Gate-drain Schottky barrier capacitance at VGS = 0 Built-in barrier potential pF 0.03138 V 1.200 IS Diode saturation current A 0.563e-12 N Diode ideality factor A 1.000e-16 VBI 1.1000 IBO Breakdown saturation current NR Breakdown ideality factor VBD Breakdown voltage V 20.00 RG Gate terminal resistance Ω 1.0000 10.0 RD Drain terminal resistance Ω 2.0000 RS Source terminal resistance Ω 0.8000 LG Gate lead inductance nH 0.5572 LD Drain lead inductance nH 0.2279 LS Source lead inductance nH 0.03532 Drain-source capacitance pF 0.1555 107.99 CDS RDSD Channel trapping resistance Ω CDSD Low frequency trapping resistance nF 12.03 CGE Gate-source electrode capacitance fF 7.7240 CDE Drain-source electrode capacitance fF 9.4390 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A 3