33–43 GHz GaAs MMIC Double Balanced Down Converter Mixer AM038D1-00 Chip Outline Features ■ Low Conversion Loss, 6.5 dB 1.785 ■ Insensitive to LO Power Variations 0.889 29-4-9 DEDDA CIMHO 1.258 ■ High LO to RF Isolation, 30 dB ■ No DC Bias Required OHMIC ADDED 9-4-92 3 ■ Low LO Power Requirement, 9 dBm 50 OHMS Description 0.085 1 2 2.010 0.951 0.085 0.000 0.000 Alpha’s double balanced GaAs Schottky diode mixer has a typical conversion loss of 6.5 dB at an LO power level as low as 9 dBm over the band 33–43 GHz. The chip uses Alpha’s proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance. 0.490 SMHO 05 Dimensions indicated in mm. All pads are ≥ 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Value Operating Temperature -55°C to +125°C Storage Temperature -65°C to +150°C Total Input Power (RF + LO) 23 dBm Electrical Specifications at 25°C Parameter Symbol RF and LO Frequency Range Min. Typ.2 Max. Unit FRF, FLO 33–43 GHz IF Frequency Range FIF 0–5 GHz LO Power Level PLO 9–21 dBm LC 6.5 dB RLRF, RLLO ISOLO-RF 18 dB 30 dB ISOLO-IF 25 dB P1 dB 7 dBm Conversion Loss1 RF and LO Return Loss1 LO to RF Isolation1 LO to IF Isolation1 RF Input 1 dB Compression Point1 Two Parallel Diode Series Resistance RS 1.5 Ω 1. Not measured on a 100% basis. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 2/00A 1 33–43 GHz GaAs MMIC Double Balanced Down Converter Mixer AM038D1-00 Typical Performance Data 40 10 30 LO to IF Isolation 8 20 LO Return Loss 6 10 Conversion Loss 4 0 4 6 8 10 12 14 16 50 LO to RF Isolation 12 10 30 8 20 Conversion Loss 6 10 LO Return Loss 4 18 0 31 32 33 LO Power (dBm) 34 35 36 37 38 39 LO Frequency (GHz) Performance vs. LO Power FRF = 38 GHz, FLO = 37 GHz, PRF = -10 dBm Performance vs. LO Frequency FRF = FLO + 1 GHz, PLO = 9 dBm Circuit Schematic 14 Conversion Loss (dB) 40 LO to IF Isolation Return Loss & Isolation (dB) LO to RF Isolation 12 14 Conversion Loss (dB) 50 Return Loss & Isolation (dB) Conversion Loss (dB) 14 90˚ Phase Shifter/Splitter 12 10 LO RF 8 IF 6 4 0 1 2 3 4 5 6 7 8 9 10 IF Frequency (GHz) Performance vs. IF Frequency FRF = 38 GHz, FLO = FRF - FIF, PLO = 9 dBm Wire Bonding Configurations OHMIC ADDED 9-4-92 RF 29-4-9 DEDDA CIMHO OHMIC ADDED 9-4-92 29-4-9 DEDDA CIMHO LO SMHO 05 50 OHMS SMHO 05 IF Single IF bond configuration. 2 1 2 1 2 50 OHMS 3 3 RF IF Requires two IF bonds. LO to IF isolation is degraded by 7 dB for this configuration. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 2/00A LO