March 2002 AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. VDS (V) = 30V ID = 11.5A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) D D D D D S S S G G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B Avalanche Current B,E Repetitive Avalanche Energy B,E L=0.1mH TA=25°C Power Dissipation ±12 V Junction and Storage Temperature Range 9.6 IAV 25 A EAV 78 mJ 80 3 W 2.1 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A ID IDM PD TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 11.5 TA=25°C Continuous Drain A Current Maximum 30 RθJA RθJL Typ 23 48 12 °C Max 40 65 16 Units °C/W °C/W °C/W AO4406 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.8 ID(ON) On state drain current VGS=4.5V, VDS=5V 60 TJ=55°C 5 VGS=10V, ID=12A Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A VGS=4.5V, ID=10A 13.5 16.5 mΩ VGS=2.5V, ID=8A 19.5 26 mΩ VDS=5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Rg 1.5 14 IS=10A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss nA 19.2 Forward Transconductance Output Capacitance 100 16 VSD Coss 1 µA 11.5 TJ=125°C gFS IS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz 25 38 0.83 mΩ S 1 V 4.5 A 1630 pF 201 pF 142 pF VGS=0V, VDS=0V, f=1MHz 0.8 Ω 18 nC VGS=4.5V, VDS=15V, ID=11.5A 2.5 nC Qgd Gate Drain Charge 5.5 nC tD(on) Turn-On DelayTime 4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 5 ns 32 ns 5 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 18,7 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 19.8 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 10V 30 4.5V 2.5V 3V 40 20 ID(A) 30 ID (A) VDS=5V 25 20 2V 15 125°C 10 25°C 10 5 VGS=1.5V 0 0 1 2 3 4 0 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 30 1.8 Normalized On-Resistance 25 VGS=2.5V RDS(ON) (mΩ) 1 20 VGS=4.5V 15 10 VGS=10V 5 0 VGS=10V ID=10A 1.6 VGS=4.5V 1.4 VGS=2.5V 1.2 1 0.8 0 5 10 15 20 25 30 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 ID=10A VGS=0V 1.0E+00 30 125°C 125°C 20 25°C 10 IS (A) RDS(ON) (mΩ) 1.0E-01 1.0E-02 25°C 1.0E-03 1.0E-04 0 0.00 1.0E-05 2.00 4.00 6.00 8.00 10.00 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 V 0.6 0.8 1.0 SD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2250 2000 Capacitance (pF) 4 VGS (Volts) 2500 VDS=15V ID=11.5A 3 2 1 1750 Ciss 1500 1250 1000 750 Coss 500 Crss 250 0 0 4 8 12 16 20 0 24 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 50 RDS(ON) limited 1ms Power (W) ID (Amps) 10ms 0.1s 1s 1.0 TJ(Max)=150°C TA=25°C 40 100µs 10.0 30 20 10s 10 TJ(Max)=150°C TA=25°C DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 TA=25°C 60 50 tA = 40 Power Dissipation (W) ID(A), Peak Avalanche Current 70 L ⋅ ID BV − VDD 30 20 10 0 0.00001 0.0001 Time in avalanche, t A (s) Figure 12: Avalanche capability Alpha & Omega Semiconductor, Ltd. 0.001 3 2 10s 1 SteadyState 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note A) 150 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN NOTE: LOGO - AOS LOGO 4406 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE. LN - ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE AO4406 4406 UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data