July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. VDS (V) = 30V ID = 6.9A RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D2 G2 S1 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C A Current TA=70°C ID Pulsed Drain Current B IDM TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TJ, TSTG Symbol Alpha & Omega Semiconductor, Ltd. Units V V 6.9 5.8 A 40 2 1.44 -55 to 150 PD t ≤ 10s Steady-State Steady-State Maximum 30 ±12 RθJA RθJL Typ 48 74 35 W °C Max 62.5 110 40 Units °C/W °C/W °C/W AO4800 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) Static Drain-Source On-Resistance gFS VSD IS Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery time Qrr Body Diode Reverse Recovery charge Max 1 1 5 100 1.4 0.7 25 VGS=4.5V, ID=6.0A VGS=2.5V, ID=5A VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=6.9A VGS=10V, VDS=15V, RL=2.2Ω, RGEN=6Ω IF=5A, dI/dt=100A/µs IF=5A, dI/dt=100A/µs 12 Units 22.6 33 27 42 27 40 32 50 mΩ mΩ 1 3 S V A V TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ 16 0.71 µA nA V A mΩ 858 110 80 1.24 pF pF pF Ω 9.6 1.65 3 5.7 13 37 4.2 15.5 7.9 nC nC nC ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 3V 25 20 2.5V ID(A) ID (A) VDS=5V 16 4.5V 15 12 8 10 VGS=2V 125°C 4 5 25°C 0 0 0 1 2 3 4 0 5 0.5 Normalized On-Resistance VGS=2.5V 50 RDS(ON) (mΩ) 1.5 2 2.5 3 1.7 60 40 VGS=4.5V 30 20 VGS=10V 1.6 ID=5A 1.5 VGS=10V VGS=4.5V 1.4 1.3 VGS=2.5V 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 60 1.0E+00 ID=5A 125°C 40 125°C 1.0E-01 50 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 30 1.0E-02 1.0E-03 1.0E-04 20 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 25°C 1.0E-05 25°C 1.0E-06 0.00 0.25 0.50 0.75 1.00 1.25 VSD (Volts) Figure 6: Body diode characteristics 1.50 AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 5 VDS=15V ID=6.9A Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V 1250 3 2 Ciss 1000 1 750 500 Coss 250 0 Crss 0 0 2 4 6 8 10 12 0 Qg (nC) Figure 7: Gate-Charge characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 TJ(Max)=150°C TA=25°C RDS(ON) limited Power W ID (Amps) 30 100µs 1ms 10.0 TJ(Max)=150°C TA=25°C 10ms 0.1s 1.0 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION NOTE: LG PARTN F A Y W LN RECOMMENDED LAND PATTERN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SO-8 PART NO. CODE UNIT: mm PART NO. AO4400 AO4401 CODE 4400 4401 PART NO. AO4800 AO4801 CODE 4800 4801 PART NO. AO4700 AO4701 CODE 4700 4701 MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data