Preliminary Tri-Band HBT Power Amplifier Module AP134-501 Features -501 ■ 3.2 V Nominal Operating Voltage TOP VIEW ■ 50 Ω Internally Matched Input and Output 0.394 (10.0 mm) ± 0.004 (0.1 mm) ■ High Power Added Efficiency: 55% for GSM and 50% for DCS and PCS ■ Small Size: 10 x 8 x 1.6 mm MCM Land Grid Array Package BOTTOM VIEW 0.075 (1.91 mm) BSC 0.069 (1.75 mm) ± 0.002 (0.051 mm) ■ GPRS Class 12 Capable 1 0.315 (8.0 mm) ± 0.004 (0.1 mm) PIN 1 INDICATOR 0.082 (2.09 mm) ± 0.002 (0.051 mm) ■ Low Current Standby Mode: < 10 µA ■ Integral Band Select and Analog Power Control 16 0.075 (1.91 mm) BSC 0.069 (1.75 mm) ± 0.002 (0.051 mm) 0.046 (1.18 mm) ± 0.002 (0.051 mm) MOLD CAP 0.04 (1.05 mm) ± 0.002 (0.05 mm) SIDE VIEW 0.06 (1.56 mm) ± 0.004 (0.10 mm) Description The AP134-501 is a high performance IC power amplifier module designed for use as the final amplification stage in tri-band GSM and GPRS mobile phone applications (880–915, 1710–1785 and 1850–1910 MHz). It features 3-cell battery operation, a band select switch, a single positive analog power control input for both bands, and exceptional power added efficiency. The amplifier is manufactured on an advanced InGaP HBT process, known industry-wide for its excellent reliability and performance. The amplifier module is completely selfcontained, requiring no external matching components. Absolute Maximum Ratings Characteristic Value Supply Voltage VCC, Standby Mode, VAPC < 0.3, No RF Input Power 6V Power Control Voltage 4V Band Select Voltage 4V Input Power (CW) 15 dBm Operating Case Temperature -35 to +85°C Storage Temperature -45 to 120°C DC Specifications Parameter Condition Supply Voltage Leakage Current Band Select Voltage Min. Typ. Max. 2.8 3.2 4.2 V 10 µA No RF Input Power GSM DCS/PCS 0 0.5 V 2.0 2.8 V 1.0 mA 0.1 1.9 V 1.0 mA Band Select Current Power Control Voltage Power Control Current Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 8/01A Unit 1 Tri-Band HBT Power Amplifier Module AP134-501 Electrical Specifications GSM Mode Parameter Condition Frequency Min. Typ. 880 Output Power 34 VCC = 2.8 V, T = -20 to +70°C Dynamic Range VAPC = 0.1–1.9 V Power Control Slope VAPC = 0.1–1.9 V Power Added Efficiency POUT = 34 dBm Max. Unit 915 MHz 35 dBm 32.5 dBm 60 dB 75 50 55 3 6 Input Power 150 dB/VAPC 10 dBm % Input VSWR POUT = 5–35 dBm 2:1 Forward Isolation PIN = -5 dBm, VAPC = 0.1 V PIN = 10 dBm, VAPC = 0.1 V -40 dBm -25 dBm Harmonics 2 F0…7 F0 -10 dBm Noise in the RX Band 925 MHz, 100 KHz BW -72 dBm 935 MHz, 100 KHz BW -84 dBm 1805–1880 MHz, 100 KHz BW -76 dBm 1930–1990 MHz, 100 KHz BW -76 dBm Ruggedness Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 1.9 V No Module Damage or Permanent Performance Degradation Stability Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 1.9 V -36 dBm Band to Band Isolation 2 F0 Measured at DCS Output -20 dBm 3 F0 Measured at DCS Output -20 dBm Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 Ω system, VCC = 3.2 V, PIN = 6 dBm and temperature = 25°C DCS/PCS Mode Parameter Frequency Max. Unit DCS Condition 1710 1785 MHz PCS 1850 1910 MHz Output Power Min. 31.9 VCC = 2.8 V, T = -20 to +70°C Dynamic Range VAPC = 0.1–1.9 V Power Control Slope VAPC = 0.1–1.9 V Power Added Efficiency POUT = 31.9 dBm Typ. 32.5 dBm 29.5 dBm 60 dB 75 42 50 3 6 Input Power 150 dB/VAPC 10 dBm % Input VSWR POUT = 0–32 dBm 2:1 Forward Isolation PIN = -5 dBm, VAPC = 0.1 V PIN = 10 dBm, VAPC = 0.1 V -48 dBm -20 dBm Harmonics 2 F0…7 F0 -10 dBm Noise in the RX Band 1805–1880 MHz, 100 KHz BW -76 dBm Ruggedness Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN =10 dBm, VAPC = 1.9 V Stability Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 1.9 V No Module Damage or Permanent Performance Degradation Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 Ω system, VCC = 3.2 V, PIN = 6 dBm and temperature = 25°C 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 8/01A -36 dBm Tri-Band HBT Power Amplifier Module AP134-501 Typical Performance Data 30 60 20 50 10 40 POUT 30 0 Gain -10 20 10 -20 PAE -30 0 -10 2.0 -40 0.5 1.0 1.5 70 30 60 20 50 10 40 POUT 0 30 -10 20 -20 10 Gain -30 0 PAE 0 0.5 1.0 -10 2.0 1.5 VAPC (V) VCC = 3.2 V, Frequency = 900 MHz, PIN = 6 dBm VCC = 3.2 V, Frequency = 1750 MHz, PIN = 6 dBm 70 30 60 20 50 10 40 POUT 0 30 Gain -10 20 PAE 10 -20 0 -30 0 0.5 1.0 -10 2.0 1.5 40 70 30 60 20 50 POUT 880 MHz 10 40 POUT 900 MHz PAE 880 MHz 0 POUT 915 MHz -10 30 20 PAE 900 MHz -20 10 PAE 915 MHz -30 0 -10 2.0 -40 0 0.5 1.0 1.5 VAPC (V) VAPC (V) VCC = 3.2 V, Frequency = 1910 MHz, PIN = 6 dBm VCC = 2.8 V, Frequency = 900 MHz, PIN = 6 dBm 60 20 50 POUT 880 MHz 10 40 POUT 900 MHz 0 PAE 880 MHz POUT 915 MHz -10 PAE 900 MHz -20 PAE 915 MHz -30 -40 0 0.5 1.0 1.5 30 20 10 0 -10 2.0 70 30 60 20 POUT (dBm) 30 40 50 POUT 880 MHz 40 10 POUT 900 MHz 0 -10 PAE 880 MHz 30 20 POUT 915 MHz -20 PAE 900 MHz PAE 915 MHz -30 -40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 0 -10 1.6 VAPC (V) VAPC (V) POUT and PAE vs. VAPC and Frequency, VCC = 3.2 V, PIN = 6 dBm POUT and PAE vs. VAPC and Frequency, VCC = 4.2 V, PIN = 6 dBm Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 8/01A Power Added Efficiency (%) 70 Power Added Efficiency (%) 40 Power Added Efficiency (%) 40 POUT (dBm) and Gain (dB) VAPC (V) -40 POUT (dBm) 40 -40 Power Added Efficiency (%) POUT (dBm) and Gain (dB) 0 POUT (dBm) and Gain (dB) 70 Power Added Efficiency (%) 40 Power Added Efficiency (%) POUT (dBm) and Gain (dB) All data taken under CW conditions and include 0.2 dB of input and output fixture losses deembedded, GSM class 4 pulsed performance adds 0.5 dB of output power and 5–7% in PAE. 3 Tri-Band HBT Power Amplifier Module AP134-501 All data taken under CW conditions and include 0.2 dB of input and output fixture losses deembedded, GSM class 4 pulsed performance adds 0.5 dB of output power and 5–7% in PAE. 70 POUT (dBm) 20 50 POUT @ VCC = 3.2 10 40 POUT @ VCC = 2.8 0 PAE @ VCC = 3.2 30 20 -10 PAE @ VCC = 4.2 -20 10 0 -30 PAE @ VCC = 2.8 -40 0 0.5 1.0 30 40 20 POUT 25˚C 30 10 0 PAE 75˚C -10 PAE 25˚C -20 -10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 Control Voltage – VAPC (V) POUT and PAE vs. Temperature VCC = 3.2 V, PIN = 6 dBm, Frequency = 880 MHz 60 PAE 75˚C PAE 25˚C 0 PAE -25˚C -10 -20 0 10 50 POUT 25˚C 40 20 POUT -25˚C 10 30 20 0 PAE -25˚C -10 PAE 25˚C -20 Control Voltage – VAPC (V) POUT and PAE vs. Temperature VCC = 3.2 V, PIN = 6 dBm, Frequency = 1710 MHz POUT and PAE vs. Temperature VCC = 3.2 V, PIN = 6 dBm, Frequency = 1850 MHz 60 35.8 59 35.6 58 35.4 57 POUT 35.2 35.0 56 55 34.8 54 34.6 PAE 34.4 53 52 34.2 51 34.0 50 100 0 20 40 60 80 0 -10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 Control Voltage – VAPC (V) 36.0 10 PAE 75˚C -30 -10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 40 Power Added Efficiency (%) POUT (dBm) 20 0 -30 4 30 30 30 POUT, F0 2 F0 and 3 F0 (dBm) POUT (dBm) 40 20 POUT 75˚C 20 F0 (dBm) 10 0 2 F0 (dBm) -10 -20 -30 -40 3 F0 (dBm) -50 0 0.5 1.0 1.5 2.0 Duty Cycle (%) VAPC (V) Duty Cycle Effects on Module Performance VCC = 3.2 V, Frequency = 900 MHz, PIN = 6 dBm Harmonic Performance VCC = 3.2 V, Frequency = 900 MHz, PIN = 6 dBm Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 8/01A Power Added Efficiency (%) 50 POUT 25˚C 60 40 Power Added Efficiency (%) POUT 75˚C POUT (dBm) 40 10 10 0 -30 POUT and PAE vs. VCC and VAPC PIN = 6 dBm POUT -25˚C 20 PAE -25˚C VAPC (V) 30 50 POUT -25˚C -10 2.0 1.5 POUT 75˚C Power Added Efficiency (%) 60 POUT @ VCC = 4.2 Power Added Efficiency (%) 30 60 40 POUT (dBm) 40 Tri-Band HBT Power Amplifier Module AP134-501 Application Schematic GND DCS/PCS Out CMOS ASIC 5 6 7 8 50 Ω Microstrip 1 12 GND 11 VCC 10 GND 50 Ω Microstrip VCC DCS/ PCS In VAPC 2 VCC 3 VBS 4 16 5 GSM In Pin Out Description Symbol 13 11 6 50 Ω Microstrip Pin DCS/ PCS Out VCC 9 GSM Out 4 13 GND VBS 14 VCC 3 15 GND 2 VCC 16 GSM In VAPC GND 1 Vcc DCS/PCS In Pin Out VCC 9 50 Ω Microstrip GSM Out Description 1 DCS/ PCS_In RF input to DCS/PCS power amplifier. 2 VAPC Analog power control input voltage. 10 nF RF bypassing capacitor recommended. 3 VCC Power supply input voltage. A 10 µF RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board. 4 VBS Band select input voltage. 5 GSM_In RF input to GSM power amplifier. 6 VCC Power supply input voltage. 10 µF RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board. 7 GND Ground connection. 8 GND Ground connection. 9 GSM_Out RF output for GSM amplifier. 10 GND Ground connection. 11 VCC Power supply input voltage. 10 µF RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board. 12 GND Ground connection. 13 DCS/ PCS_Out RF output for DCS/PCS power amplifier. 14 GND Ground connection. 15 GND Ground connection. 16 VCC Power supply input voltage. 10 µF RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 8/01A 5