ALPHA AV111-12

HIP3™ Variable Attenuator
0.80–1.00 GHz
AV111-12
Features
■ +40 dBm IP3 Typical
SOI
■ Low Loss 1 dB Typical
C-8
SOI
C-8
■ Attenuation 30 dB Typical
■ Good VSWR <1.5:1 Typical
■ Low Phase Shift
Description
The AV111-12 is a current controlled variable attenuator
from Alpha’s series of HIP3™ components. It is designed
to meet the wide dynamic range required in spread
spectrum wireless base station applications. A monolithic
quadrature hybrid is teamed with a silicon PIN diode pair
in a plastic surface mount package reducing size and
assuring consistency from part to part.
Electrical Specifications at 25°C
Parameter
Min.
Frequency
Typ.
0.80
Insertion Loss (0 mA Control Current)
1.0
Attenuation @ 1.2 mA Control Current (900 MHz)
17.5
VSWR All Ports
1.5
Input 3rd Order Intercept
+37
Relative Phase Shift Up to 20 dB Attenuation1
Group Delay
Max.
Unit
1.0
GHz
1.5
dB
21.5
dB
1.8
+40
dBm
7
10
Deg.
0.4
0.9
ns
Typ.
Max.
Unit
5
8
5
µs
µs
mV
+15
dBm
Operating Characteristics at 25°C (0, +5 V)
Parameter2
Switching
Characteristics3
Condition
Frequency
Min.
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru (Peak)
Maximum Input Power for <1 dB
Attenuation Variation
1. When built with external components as shown in the Pin Out diagram.
2. All measurements made in a 50 Ω system, unless otherwise specified.
3. 0–4 mA square wave total control current.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 6/01A
1
HIP3™ Variable Attenuator 0.80–1.00 GHz
AV111-12
Typical Performance Data
1.70
0
-5
1.60
800 MHz
-10
Attenuation (dB)
VSWR
1.50
1.40
1 GHz
1.30
1.20
900 MHz
0.5
1.0
1.5
2.0
2.5
-35
3.0
1000 MHz
900 MHz
800 MHz
0
0.5
1.0
1.5
2.0
Current (mA)
Current (mA)
Input/Output VSWR vs. Current
Attenuation vs. Current
24
0
1.4 mA
0 mA
0.1 mA
-5
16
12
8
1.2 mA
4
1.0 mA
0
0.80
0.84
0.88
0.92
Attenuation (dB)
20
0.5 mA
0 mA
1.00
0.96
0.5 mA
-10
0.9 mA
-15
-20
1.2 mA
-25
-30
0.80
0.85
0.90
0.95
Frequency (GHz)
Frequency (GHz)
Relative Phase vs. Frequency
Attenuation vs. Frequency
25
15
10
900 MHz
5
0
-5
1.4 mA
1.00
100
1000 MHz
20
Current (mA)
Relative Phase Shift (Degrees)
-30
-50
0
Relative Phase Shift (Degrees)
-25
-45
1.00
800 MHz
-10
1
0.1
-15
-20
-25
-35
2
-20
-40
1.10
10
-15
0.01
-30
-25
-20
-15
-10
-5
0
400
500
600
700
800
900
1000
Attenuation (dB)
Voltage (V)
Relative Phase vs. Attenuation
Typical PIN Diode Current vs. Voltage
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 6/01A
HIP3™ Variable Attenuator 0.80–1.00 GHz
Pin Out
AV111-12
Connection Diagram
680 Ω
CONTROL
CURRENT
RF OUT
220 pF
220 pF
100 nH
100 nH
CONTROL
CURRENT
1
8
CONTROL
CURRENT
GND
2
7
GND
CONTROL
CURRENT
RF IN
6
GND
5
4
RF In
3
GND
RF Out
SOIC-8
PIN 8
0.050 (1.27 mm) BSC
Absolute Maximum Ratings
Characteristic
Value
RF Input Power
0.5 W CW, 4 W @ 12.5%
Duty Cycle
Control Current
50 mA per Diode
Operating Temperature
-65 to +125°C
Storage Temperature
-65 to +125°C
Maximum Reverse Diode Voltage
-100 V
Electrostatic Discharge
+125 V
Note: Operating this device above any of these parameters may cause
irreversible damage.
SK38531
PIN 1
0.068
(1.73 mm) MAX.
0.197 (5.00 mm)
0.189 (4.80 mm)
0.010 (0.25 mm)
0.004 (0.10 mm)
Recommended Board Layout
RF In/Out
0.244 (6.20 mm)
0.228 (5.80 mm)
PIN 1
INDICATOR
0.020 (0.51 mm) MAX.
0.049
(1.24 mm)
0.016
(0.41 mm)
0.016 MAX.
(0.41 mm) x
45˚ CHAMFER
0.158 (4.00 mm)
0.150 (3.80 mm)
0.010 (0.25 mm)
0.007 (0.17 mm)
8˚
MAX.
RF In/Out
20 mil Diameter
Ground Via
Pin 1
AV10✳-12
0.018
22 nH
Bias Input
680 Ω
120 pF
Material is 10 mil FR4.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 6/01A
3