ALSC AS7C33256NTF18B

April 2005
AS7C33256NTF18B
®
3.3V 256K x 18 Flowthrough Synchronous SRAM with NTDTM
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Organization: 262,144 words × 18 bits
NTD™ architecture for efficient bus operation
Fast clock to data access: 7.5/8.0/10.0 ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous operation
Flow-through mode
Asynchronous output enable control
Available in 100-pin TQFP package
Byte write enables
Clock enable for operation hold
Multiple chip enables for easy expansion
3.3V core power supply
2.5V or 3.3V I/O operation with separate VDDQ
Self-timed write cycles
Interleaved or linear burst modes
Snooze mode for standby operation
Logic block diagram
18
A[17:0]
D
Address
register
burst logic
18
Q
CLK
D
Q
Write delay
addr. registers
CE0
CE1
CE2
18
CLK
R/W
Control
logic
BWa
BWb
CLK
Write Buffer
ADV / LD
LBO
ZZ
DQ [a,b]
CLK
18
D
256K x 18
SRAM
array
18
Data
Q
input
register
18
CLK
18
18
CLK
CEN
Output
buffer
OE
18
OE
DQ [a,b]
Selection guide
-75
-80
-10
Units
Minimum cycle time
8.5
10
12
ns
Maximum clock access time
7.5
8.0
10
ns
Maximum operating current
260
230
200
mA
Maximum standby current
110
100
90
mA
Maximum CMOS standby current (DC)
30
30
30
mA
4/13/05, v 1.3
Alliance Semiconductor
P. 1 of 18
Copyright © Alliance Semiconductor. All rights reserved.
AS7C33256NTF18B
®
4 Mb Synchronous SRAM products list1,2
Org
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
Part Number
AS7C33256PFS18B
AS7C33128PFS32B
AS7C33128PFS36B
AS7C33256PFD18B
AS7C33128PFD32B
AS7C33128PFD36B
AS7C33256FT18B
AS7C33128FT32B
AS7C33128FT36B
AS7C33256NTD18B
AS7C33128NTD32B
AS7C33128NTD36B
AS7C33256NTF18B
AS7C33128NTF32B
AS7C33128NTF36B
Mode
PL-SCD
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
FT
FT
NTD-PL
NTD-PL
NTD-PL
NTD-FT
NTD-FT
NTD-FT
Speed
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
7.5/8.0/10 ns
7.5/8.0/10 ns
7.5/8.0/10 ns
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
7.5/8.0/10 ns
7.5/8.0/10 ns
7.5/8.0/10 ns
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
PL-SCD
PL-DCD
FT
NTD1-PL
NTD-FT
:
:
:
:
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect
Pipelined Burst Synchronous SRAM - Double Cycle Deselect
Flow-through Burst Synchronous SRAM
Pipelined Burst Synchronous SRAM with NTDTM
Flow-through Burst Synchronous SRAM with NTDTM
1. NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property
of their respective owners.
4/13/05, v 1.3
Alliance Semiconductor
P. 2 of 18
AS7C33256NTF18B
®
91
90
89
88
87
86
85
84
83
82
81
TQFP 14 x 20mm
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
NC
NC
VDDQ
VSSQ
NC
DQPa
DQa7
DQa6
VSSQ
VDDQ
DQa5
DQa4
VSS
NC
VDD
ZZ
DQa3
DQa2
VDDQ
VSSQ
DQa1
DQa0
NC
NC
VSSQ
VDDQ
NC
NC
NC
LBO
A
A
A
A
A1
A0
NC
NC
VSS
VDD
NC
NC
A
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VDDQ
VSSQ
NC
NC
DQb0
DQb1
VSSQ
VDDQ
DQb2
DQb3
NC
VDD
NC
VSS
DQb4
DQb5
VDDQ
VSSQ
DQb6
DQb7
DQPb
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
92
NC
NC
NC
100
99
98
97
96
95
94
93
A
A
CE0
CE1
NC
NC
BWb
BWa
CE2
VDD
VSS
CLK
R/W
CEN
OE
ADV/LD
NC
NC
A
A
100-pin TQFP - top view
4/13/05, v 1.3
Alliance Semiconductor
P. 3 of 18
AS7C33256NTF18B
®
Functional Description
The AS7C33256NTF18B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM)
organized as 262,144 words × 18 bits and incorporates a LATE Write.
This variation of the 4Mb+ synchronous SRAM uses the No Turnaround Delay (NTD™) architecture, featuring an enhanced
write operation that improves bandwidth over flowthrough burst devices. In a normal flowthrough burst device, the write data,
command, and address are all applied to the device on the same clock edge. If a read command follows this write command,
the system must wait for one 'dead' cycle for valid data to become available. This dead cycle can significantly reduce overall
bandwidth for applications requiring random access or read-modify-write operations.
NTD™ devices use the memory bus more efficiently by introducing a write latency which matches the one-cycle flowthrough read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear.
With NTD™, write and read operations can be used in any order without producing dead bus cycle.
Assert R/W low to perform write cycles. Byte write enable controls write access to specific bytes, or can be tied low for full 18
bit writes. Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is applied
to the device one clock cycle later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled for write
operations; it can be tied low for normal operations. Outputs go to a high impedance state when the device is de-selected by
any of the three chip enable inputs.
Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external addresses, chip
select, R/W pins are ignored, and internal address counters increment in the count sequence specified by the LBO control. Any
device operations, including burst, can be stalled using the CEN=1, the clock enable input.
The AS7C33256NTF18B operates with a 3.3V ± 5% power supply for the device core (VDD). DQ circuits use a separate
power supply (VDDQ) that operates across 2.5V or 3.3V ranges. These devices are available in a 100-pin TQFP package.
TQFP Capacitance
Parameter
Symbol
Test conditions
Min
Max
Unit
Vin = 0V
-
5
pF
Vin = Vout = 0V
-
7
pF
Symbol
Typical
Units
1–layer
θJA
40
°C/W
4–layer
θJA
22
°C/W
θJC
8
°C/W
*
Input capacitance
CIN
I/O capacitance
CI/O*
*Guranteed not tested
TQFP thermal resistance
Description
Thermal resistance
(junction to ambient)1
Thermal resistance
(junction to top of case)1
Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51
1 This parameter is sampled
4/13/05, v 1.3
Alliance Semiconductor
P. 4 of 18
AS7C33256NTF18B
®
Signal descriptions
Signal
I/O Properties
Description
CLK
I
CLOCK
CEN
I
SYNC
Clock enable. When de-asserted high, the clock input signal is masked.
A, A0, A1
I
SYNC
Address. Sampled when all chip enables are active and ADV/LD is asserted.
I/O
SYNC
Data. Driven as output when the chip is enabled and OE is active.
CE0, CE1,
CE2
I
SYNC
Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted.
Are ignored when ADV/LD is high.
ADV/LD
I
SYNC
Advance or Load. When sampled high, the internal burst address counter will increment in
the order defined by the LBO input value. When low, a new address is loaded.
R/W
I
SYNC
A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE
operation. Is ignored when ADV/LD is high.
BW[a,b]
I
SYNC
Byte write enables. Used to control write on individual bytes. Sampled along with WRITE
command and BURST WRITE.
OE
I
ASYNC
Asynchronous output enable. I/O pins are not driven when OE is inactive.
LBO
I
STATIC
Selects Burst mode. When tied to VDD or left floating, device follows interleaved Burst order. When
driven Low, device follows linear Burst order. This signal is internally pulled High.
ZZ
I
ASYNC
Snooze. Places device in low power mode; data is retained. Connect to GND if unused.
NC
-
-
DQ[a,b]
Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock.
No connects.
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SNOOZE MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ
is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.
Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE.
Burst order
Interleaved burst order LBO = 1
Linear burst order LBO = 0
A1A0
A1A0
A1A0
A1A0
A1A0
A1A0
A1A0
A1A0
Starting address
0 0
0 1
1 0
1 1
Starting Address
0 0
0 1
1 0
1 1
First increment
0 1
0 0
1 1
1 0
First increment
0 1
1 0
1 1
0 0
Second increment
1 0
1 1
0 0
0 1
Second increment
1 0
1 1
0 0
0 1
Third increment
1 1
1 0
0 1
0 0
Third increment
1 1
0 0
0 1
1 0
4/13/05, v 1.3
Alliance Semiconductor
P. 5 of 18
AS7C33256NTF18B
®
Synchronous truth table[5,6,7,8,9,11]
CE0
CE1 CE2 ADV/LD R/W
BWn
OE
CEN
Address
source
CLK
Operation
DQ
H
X
X
L
X
X
X
L
NA
L to H
DESELECT Cycle
High-Z
X
X
H
L
X
X
X
L
NA
L to H
DESELECT Cycle
High-Z
X
L
X
L
X
X
X
L
NA
L to H
DESELECT Cycle
High-Z
X
X
X
H
X
X
X
L
NA
L to H
CONTINUE DESELECT Cycle
High-Z
L
H
L
L
H
X
L
L
X
X
X
H
X
X
L
L
L
H
L
L
H
X
H
L
X
X
X
H
X
X
H
L
L
H
L
L
L
L
X
L
X
X
X
H
X
L
X
L
L
H
L
L
L
H
X
L
X
X
X
H
X
H
X
L
X
X
X
X
X
X
X
H
External L to H
Next
L to H
READ Cycle (Begin Burst)
Q
READ Cycle (Continue Burst)
Q
External L to H NOP/DUMMY READ (Begin Burst) High-Z
Next
L to H
External L to H
Next
L to H
DUMMY READ (Continue Burst)
L to H
1,10
2
High-Z 1,2,10
D
3
WRITE CYCLE (Continue Burst)
D
1,3,10
High-Z
2,3
WRITE ABORT (Continue Burst)
High-Z
1,2,3,
10
INHIBIT CLOCK
-
4
Current L to H
Key: X = Don’t Care, H = HIGH, L = LOW. BWn = H means all byte write signals (BWa, BWb) are HIGH. BWn = L means one or more byte write
signals are LOW.
Notes:
1 CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or WRITE) is chose in the initial
BEGIN BURST cycle. A CONINUE DESELECT cycle can only be entered if a DESELECT CYCLE is executed first.
2 DUMMY READ and WRITE ABORT cycles can be considered NOPs because the device performs no external operation. A WRITE ABORT means a
WRITE command is given, but no operation is performed.
3 OE may be wired LOW to minimize the number of control signal to the SRAM. The device will automatically turn off the output drivers during a WRITE
cycle. OE may be used when the bus turn-on and turn-off times do not meet an application’s requirements.
4 If an INHIBIT CLOCK command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it occurs during a WRITE cycle, the bus will
remain in High-Z. No WRITE operations will be performed during the INHIBIT CLOCK cycle.
5 BWa enables WRITEs to byte “a” (DQa pins); BWb enables WRITEs to byte “b” (DQb pins).
6 All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
7 Wait states are inserted by setting CEN HIGH.
8 This device contains circuitry that will ensure that the outputs will be in High-Z during power-up.
9 The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST CYCLE.
10 The address counter is incremented for all CONTINUE BURST cycles.
11 ZZ pin is always Low.
4/13/05, v 1.3
1
WRITE CYCLE (Begin Burst)
External L to H NOP/WRITE ABORT (Begin Burst)
Next
Notes
Alliance Semiconductor
P. 6 of 18
AS7C33256NTF18B
®
State diagram for NTD SRAM
Burst
Read
Read
Read
Burst
Read
ea
R
d
Burst
Write
Burst
Dsel
W
rit
e
Write
Read
Dsel
Dsel
el
Ds
ite
Wr
Write
Write
Dsel
Ds
el
Re
ad
Burst
Burst
Write
Burst
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Power supply voltage relative to GND
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Power dissipation
PD
–
1.8
W
DC output current
IOUT
–
20
mA
Storage temperature (plastic)
Tstg
–65
+150
o
C
Tbias
–65
+135
o
C
Temperature under bias
Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
*V
DDQ
Symbol
Min
Nominal
Max
Unit
VDD
3.135
3.3
3.465
V
VDDQ*
3.135
3.3
VDD
V
Vss
0
0
0
V
Symbol
Min
Nominal
Max
Unit
VDD
3.135
3.3
3.465
V
VDDQ*
2.375
2.5
VDD
V
Vss
0
0
0
V
cannot be greater than VDD
Recommended operating conditions at 2.5V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
*V
DDQ
cannot be greater than VDD
4/13/05, v 1.3
Alliance Semiconductor
P. 7 of 18
AS7C33256NTF18B
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Sym
Conditions
Min
Max
Unit
current†
|ILI|
VDD = Max, 0V < VIN < VDD
-2
2
µA
Output leakage current
|ILO|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
µA
Input high (logic 1) voltage
VIH
Address and control pins
2*
VDD+0.3
I/O pins
2*
VDDQ+0.3
Input low (logic 0) voltage
VIL
Address and control pins
-0.3**
0.8
I/O pins
-0.5**
0.8
Output high voltage
VOH
IOH = –4 mA, VDDQ = 3.135V
2.4
–
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 3.465V
–
0.4
V
Input leakage
V
V
DC electrical characteristics for 2.5V I/O operation
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current†
|ILI|
VDD = Max, 0V < VIN < VDD
-2
2
µA
Output leakage current
|ILO|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
µA
Input high (logic 1) voltage
VIH
Address and control pins
1.7*
VDD+0.3
V
I/O pins
1.7*
VDDQ+0.3
V
Input low (logic 0) voltage
VIL
Address and control pins
-0.3**
0.7
V
I/O pins
-0.3**
0.7
V
Output high voltage
VOH
IOH = –4 mA, VDDQ = 2.375V
1.7
–
IOH = –1 mA, VDDQ = 2.375V
2.0
–
IOL = 8 mA, VDDQ = 2.625V
–
0.7
IOL = 1 mA, VDDQ = 2.625V
–
0.4
Output low voltage
VOL
V
V
† LBO pin has an internal pull-up and input leakage = -10 µA.
*
VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC
**V
IL min
= -1.5 for pulse width less than 0.2 X tCYC
IDD operating conditions and maximum limits
Parameter
Operating power supply current1
Sym
ICC
ISB
Standby power supply current
Conditions
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax,
IOUT = 0 mA, ZZ < VIL
All VIN ≤ 0.2V or > VDD – 0.2V, Deselected,
f = fMax, ZZ < VIL
-75
-80
-10
Unit
260
230
200
mA
110
100
90
ISB1
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
30
30
30
ISB2
Deselected, f = fMax, ZZ ≥ VDD – 0.2V,
all VIN ≤ VIL or ≥ VIH
30
30
30
mA
1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading.
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Alliance Semiconductor
P. 8 of 18
AS7C33256NTF18B
®
Timing characteristics over operating range
-75
Parameter
Sym
-80
-10
Min
Max
Min
Max
Min
Max
Unit
Cycle time
tCYC
8.5
–
10
–
12
–
ns
Clock access time
tCD
–
7.5
–
8.0
–
10
ns
Output enable low to data valid
tOE
–
3.5
–
4.0
–
4.0
ns
Notes1
Clock high to output low Z
tLZC
2.5
–
2.5
–
2.5
–
ns
2,3,4
Data Output invalid from clock high
tOH
2.5
–
2.5
–
2.5
–
ns
2
Output enable low to output low Z
tLZOE
0
–
0
–
0
–
ns
2,3,4
Output enable high to output high Z
tHZOE
–
3.5
–
4.0
–
4.0
ns
2,3,4
Clock high to output high Z
tHZC
–
3.5
–
4.0
–
4.0
ns
2,3,4
Clock high pulse width
tCH
3.0
–
4.0
–
4.0
–
ns
5
Clock low pulse width
tCL
3.0
–
4.0
–
4.0
–
ns
5
Address and Control setup to clock high
tAS
2.0
–
2.0
–
2.0
–
ns
6
Data setup to clock high
tDS
2.0
–
2.0
–
2.0
–
ns
6
Write setup to clock high
tWS
2.0
–
2.0
–
2.0
–
ns
6, 7
Chip select setup to clock high
tCSS
2.0
–
2.0
–
2.0
–
ns
6, 8
Address hold from clock high
tAH
0.5
–
0.5
–
0.5
–
ns
6
Data hold from clock high
tDH
0.5
–
0.5
–
0.5
–
ns
6
Write hold from clock high
tWH
0.5
–
0.5
–
0.5
–
ns
6, 7
Chip select hold from clock high
tCSH
0.5
–
0.5
–
0.5
–
ns
6, 8
Clock enable setup to clock high
tCENS
2.0
–
2.0
–
2.0
–
ns
6
Clock enable hold from clock high
tCENH
0.5
–
0.5
–
0.5
–
ns
6
ADV setup to clock high
tADVS
2.0
–
2.0
–
2.0
–
ns
6
ADV hold from clock high
tADVH
0.5
–
0.5
–
0.5
–
ns
6
1 See “Notes:” on page 15.
Snooze Mode Electrical Characteristics
Description
Current during Snooze Mode
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to SNOOZE current
ZZ inactive to exit SNOOZE current
4/13/05, v 1.3
Conditions
Symbol
ZZ > VIH
ISB2
tPDS
tPUS
tZZI
tRZZI
Alliance Semiconductor
Min
Max
Units
30
mA
cycle
cycle
cycle
2
2
2
0
P. 9 of 18
AS7C33256NTF18B
®
Key to switching waveforms
Rising input
don’t care
Falling input
Undefined
Timing waveform of read cycle
tCH
tCL
tCYC
CLK
tCENS tCENH
CEN
tAS
Address
tAH
A1
A2
A3
tWS tWH
R/W
tCSS
tCSH
CE0,CE2
CE1
tADVS tADVH
ADV/LD
OE
tHZOE
tOE
Dout
tLZOE
Q(A1)
Q(A2Y‘11)
Q(A2)
Q(A3)
Q(A3Y‘01)
Q(A2Y‘01) Q(A2Y‘10)
Command
4/13/05, v 1.3
READ
Q(A1)
DSEL
READ
Q(A2)
BURST
BURST
READ
READ
READ
Q(A2Ý11)
Q(A2Ý01) Q(A2Ý10)
BURST
Alliance Semiconductor
STALL
READ
Q(A3)
BURST
READ
Q(A3Ý01)
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Timing waveform of write cycle
tCH
tCL
tCYC
CLK
tCENS tCENH
CEN
tAS
tAH
A1
Address
A2
A3
R/W
BWn
tCSS
tCSH
CE0,CE2
CE1
tADVS tADVH
ADV/LD
OE
tDS
D(A1)
Din
tHZOE
Dout
Command
4/13/05, v 1.3
tDH
D(A3)
D(A2)
D(A2Y‘01) D(A2Y‘10)
D(A2Y‘11)
D(A3Y‘01)
Q(n-1)
WRITE
D(A1)
DSEL
WRITE
D(A2)
BURST
BURST
BURST
WRITE
WRITE
WRITE
D(A2Ý01) D(A2Ý10) D(A2Ý11)
Alliance Semiconductor
STALL
WRITE
D(A3)
BURST
WRITE
D(A3Ý01)
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Timing waveform of read/write cycle
tCH
tCL
tCYC
CLK
tCENS
tCENH
CEN
tAS
tAH
A1
ADDRESS
A3
A2
tWS
tWH
tWS
tWH
tCSS
tCSH
tADVS
tADVH
A4
A5
A6
A7
D(A5)
Q(A6)
R/W
BWn
CE0, CE2
CE1
ADV/LD
OE
tCD
tDS tDH
D/Q
D(A1)
tLZC
D(A2)
D(A2Ý01)
tHZOE
tOE
tOH
Q(A3)
Q(A4)
tHZC
Q(A4Ý01)
D(A7)
tLZOE
Command
WRITE
D(A1)
WRITE
D(A2)
BURST
WRITE
D(A2Ý01)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4Ý01)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DSEL
Note: Ý = XOR when LBO = high/no connect. Ý = ADD when LBO = low.
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NOP, stall and deselect cycles
CLK
CEN
CE1
CE0, CE2
ADV/LD
R/W
BWn
Address
A2
A1
D/Q
Command
Q(A1)
READ
Q(A1)
Q(A1Ý01)
BURST STALL
Q(A1Ý01)
A3
D(A2)
Q(A1Ý10)
BURST DSEL
Q(A1Ý10)
BURST
DSEL
WRITE
D(A2)
BURST BURST WRITE
NOP
D(A2Ý10) NOP
D(A2Ý01)
D(A3)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low. OE is low.
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Timing waveform of snooze mode
CLK
tPUS
ZZ setup cycle
ZZ recovery cycle
ZZ
tZZI
Isupply
ISB2
tRZZI
All inputs
(except ZZ)
Deselect or Read Only
Deselect or Read Only
Normal
operation
Cycle
Dout
4/13/05, v 1.3
High-Z
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AC test conditions
• Output load: For tLZC, tLZOE, tHZOE, and tHZC, see Figure C. For all others, see Figure B.
• Input pulse level: GND to 3V. See Figure A.
Thevenin equivalent:
• Input rise and fall time (measured at 0.3V and 2.7V): 1.0V/ns. See Figure A.
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
• Input and output timing reference levels: 1.5V.
+3.0V
Z0 = 50Ω
90%
90%
10%
GND
50Ω
VL = 1.5V
for 3.3V I/O;
30 pF* = V
DDQ/2
for 2.5V I/O
DOUT
10%
Figure A: Input waveform
Figure B: Output load (A)
319Ω/1667Ω
DOUT
5 pF*
353Ω/1538Ω
GND *including scope
and jig capacitance
Figure C: Output load(B)
Notes:
1) For test conditions, see “AC test conditions”, Figures A, B, C
2) This parameter measured with output load condition in Figure C.
3) This parameter is sampled, but not 100% tested.
4) tHZOE is less than tLZOE and tHZC is less than tLZC at any given temperature and voltage.
5) tCH measured high above VIH and tCL measured as low below VIL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to R/W and BW[a,b].
8) Chip select refers to CE0, CE1, and CE2.
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Package dimensions
100-pin quad flat pack (TQFP)
Hd
A1
A2
b
c
D
E
e
Hd
He
L
L1
a
TQFP
Min
Max
0.05
0.15
1.35
1.45
0.22
0.38
0.09
0.20
13.90
14.10
19.90
20.10
0.65 nominal
15.90
16.10
21.90
22.10
0.45
0.75
1.00 nominal
0°
7°
Dimensions in
millimeters
D
b
e
He E
α
c
L1
L
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Alliance Semiconductor
A1 A2
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Ordering information
Package
TQFP
TQFP
Width
x18
x18
-75
AS7C33256NTF18B-75TQC
AS7C33256NTF18B-75TQI
–80
AS7C33256NTF18B-80TQC
AS7C33256NTF18B-80TQI
–10
AS7C33256NTF18B-10TQC
AS7C33256NTF18B-10TQI
Note: Add suffix ‘N’ to the above part numbers for Lead Free Parts (Ex. AS7C33256NTF18B-75TQCN)
Part numbering guide
AS7C
33
256
NTF
18
B
–XX
TQ
C/I
X
1
2
3
4
5
6
7
8
9
10
1. Alliance Semiconductor SRAM prefix
2. Operating voltage: 33 = 3.3V
3. Organization: 256 = 256K
4. NTF = No Turn-Around Delay. Flow-through mode
5. Organization: 18 = x18
6. Production version: B = Product revision
7. Clock access time: [-75 = 7.5 ns; -80 = 8.0 ns; -10 = 10.0]
8. Package type: TQ = TQFP
9. Operating temperature: C = commercial (0° C to 70° C); I = industrial (-40° C to 85° C)
10. N = Lead free part
4/13/05, v 1.3
Alliance Semiconductor
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®
Alliance Semiconductor Corporation
Copyright © Alliance Semiconductor
2575, Augustine Drive,
All Rights Reserved
Santa Clara, CA 95054
Part Number: AS7C33256NTF18B
Tel: 408 - 855 - 4900
Document Version: v 1.3
Fax: 408 - 855 - 4999
www.alsc.com
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are
trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective
companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes
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estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product
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