April 2005 AS7C33256NTF18B ® 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTDTM Features • • • • • • • • • • • • • • • • Organization: 262,144 words × 18 bits NTD™ architecture for efficient bus operation Fast clock to data access: 7.5/8.0/10.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous output enable control Available in 100-pin TQFP package Byte write enables Clock enable for operation hold Multiple chip enables for easy expansion 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ Self-timed write cycles Interleaved or linear burst modes Snooze mode for standby operation Logic block diagram 18 A[17:0] D Address register burst logic 18 Q CLK D Q Write delay addr. registers CE0 CE1 CE2 18 CLK R/W Control logic BWa BWb CLK Write Buffer ADV / LD LBO ZZ DQ [a,b] CLK 18 D 256K x 18 SRAM array 18 Data Q input register 18 CLK 18 18 CLK CEN Output buffer OE 18 OE DQ [a,b] Selection guide -75 -80 -10 Units Minimum cycle time 8.5 10 12 ns Maximum clock access time 7.5 8.0 10 ns Maximum operating current 260 230 200 mA Maximum standby current 110 100 90 mA Maximum CMOS standby current (DC) 30 30 30 mA 4/13/05, v 1.3 Alliance Semiconductor P. 1 of 18 Copyright © Alliance Semiconductor. All rights reserved. AS7C33256NTF18B ® 4 Mb Synchronous SRAM products list1,2 Org 256KX18 128KX32 128KX36 256KX18 128KX32 128KX36 256KX18 128KX32 128KX36 256KX18 128KX32 128KX36 256KX18 128KX32 128KX36 Part Number AS7C33256PFS18B AS7C33128PFS32B AS7C33128PFS36B AS7C33256PFD18B AS7C33128PFD32B AS7C33128PFD36B AS7C33256FT18B AS7C33128FT32B AS7C33128FT36B AS7C33256NTD18B AS7C33128NTD32B AS7C33128NTD36B AS7C33256NTF18B AS7C33128NTF32B AS7C33128NTF36B Mode PL-SCD PL-SCD PL-SCD PL-DCD PL-DCD PL-DCD FT FT FT NTD-PL NTD-PL NTD-PL NTD-FT NTD-FT NTD-FT Speed 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 7.5/8.0/10 ns 7.5/8.0/10 ns 7.5/8.0/10 ns 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 7.5/8.0/10 ns 7.5/8.0/10 ns 7.5/8.0/10 ns 1 Core Power Supply: VDD = 3.3V + 0.165V 2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O VDDQ = 2.5V + 0.125V for 2.5V I/O PL-SCD PL-DCD FT NTD1-PL NTD-FT : : : : : Pipelined Burst Synchronous SRAM - Single Cycle Deselect Pipelined Burst Synchronous SRAM - Double Cycle Deselect Flow-through Burst Synchronous SRAM Pipelined Burst Synchronous SRAM with NTDTM Flow-through Burst Synchronous SRAM with NTDTM 1. NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of their respective owners. 4/13/05, v 1.3 Alliance Semiconductor P. 2 of 18 AS7C33256NTF18B ® 91 90 89 88 87 86 85 84 83 82 81 TQFP 14 x 20mm 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A NC NC VDDQ VSSQ NC DQPa DQa7 DQa6 VSSQ VDDQ DQa5 DQa4 VSS NC VDD ZZ DQa3 DQa2 VDDQ VSSQ DQa1 DQa0 NC NC VSSQ VDDQ NC NC NC LBO A A A A A1 A0 NC NC VSS VDD NC NC A A A A A A A 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 VDDQ VSSQ NC NC DQb0 DQb1 VSSQ VDDQ DQb2 DQb3 NC VDD NC VSS DQb4 DQb5 VDDQ VSSQ DQb6 DQb7 DQPb NC VSSQ VDDQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 92 NC NC NC 100 99 98 97 96 95 94 93 A A CE0 CE1 NC NC BWb BWa CE2 VDD VSS CLK R/W CEN OE ADV/LD NC NC A A 100-pin TQFP - top view 4/13/05, v 1.3 Alliance Semiconductor P. 3 of 18 AS7C33256NTF18B ® Functional Description The AS7C33256NTF18B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) organized as 262,144 words × 18 bits and incorporates a LATE Write. This variation of the 4Mb+ synchronous SRAM uses the No Turnaround Delay (NTD™) architecture, featuring an enhanced write operation that improves bandwidth over flowthrough burst devices. In a normal flowthrough burst device, the write data, command, and address are all applied to the device on the same clock edge. If a read command follows this write command, the system must wait for one 'dead' cycle for valid data to become available. This dead cycle can significantly reduce overall bandwidth for applications requiring random access or read-modify-write operations. NTD™ devices use the memory bus more efficiently by introducing a write latency which matches the one-cycle flowthrough read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear. With NTD™, write and read operations can be used in any order without producing dead bus cycle. Assert R/W low to perform write cycles. Byte write enable controls write access to specific bytes, or can be tied low for full 18 bit writes. Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is applied to the device one clock cycle later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled for write operations; it can be tied low for normal operations. Outputs go to a high impedance state when the device is de-selected by any of the three chip enable inputs. Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external addresses, chip select, R/W pins are ignored, and internal address counters increment in the count sequence specified by the LBO control. Any device operations, including burst, can be stalled using the CEN=1, the clock enable input. The AS7C33256NTF18B operates with a 3.3V ± 5% power supply for the device core (VDD). DQ circuits use a separate power supply (VDDQ) that operates across 2.5V or 3.3V ranges. These devices are available in a 100-pin TQFP package. TQFP Capacitance Parameter Symbol Test conditions Min Max Unit Vin = 0V - 5 pF Vin = Vout = 0V - 7 pF Symbol Typical Units 1–layer θJA 40 °C/W 4–layer θJA 22 °C/W θJC 8 °C/W * Input capacitance CIN I/O capacitance CI/O* *Guranteed not tested TQFP thermal resistance Description Thermal resistance (junction to ambient)1 Thermal resistance (junction to top of case)1 Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51 1 This parameter is sampled 4/13/05, v 1.3 Alliance Semiconductor P. 4 of 18 AS7C33256NTF18B ® Signal descriptions Signal I/O Properties Description CLK I CLOCK CEN I SYNC Clock enable. When de-asserted high, the clock input signal is masked. A, A0, A1 I SYNC Address. Sampled when all chip enables are active and ADV/LD is asserted. I/O SYNC Data. Driven as output when the chip is enabled and OE is active. CE0, CE1, CE2 I SYNC Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted. Are ignored when ADV/LD is high. ADV/LD I SYNC Advance or Load. When sampled high, the internal burst address counter will increment in the order defined by the LBO input value. When low, a new address is loaded. R/W I SYNC A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE operation. Is ignored when ADV/LD is high. BW[a,b] I SYNC Byte write enables. Used to control write on individual bytes. Sampled along with WRITE command and BURST WRITE. OE I ASYNC Asynchronous output enable. I/O pins are not driven when OE is inactive. LBO I STATIC Selects Burst mode. When tied to VDD or left floating, device follows interleaved Burst order. When driven Low, device follows linear Burst order. This signal is internally pulled High. ZZ I ASYNC Snooze. Places device in low power mode; data is retained. Connect to GND if unused. NC - - DQ[a,b] Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock. No connects. Snooze Mode SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of SNOOZE MODE is dictated by the length of time the ZZ is in a High state. The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE. When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete. Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE. Burst order Interleaved burst order LBO = 1 Linear burst order LBO = 0 A1A0 A1A0 A1A0 A1A0 A1A0 A1A0 A1A0 A1A0 Starting address 0 0 0 1 1 0 1 1 Starting Address 0 0 0 1 1 0 1 1 First increment 0 1 0 0 1 1 1 0 First increment 0 1 1 0 1 1 0 0 Second increment 1 0 1 1 0 0 0 1 Second increment 1 0 1 1 0 0 0 1 Third increment 1 1 1 0 0 1 0 0 Third increment 1 1 0 0 0 1 1 0 4/13/05, v 1.3 Alliance Semiconductor P. 5 of 18 AS7C33256NTF18B ® Synchronous truth table[5,6,7,8,9,11] CE0 CE1 CE2 ADV/LD R/W BWn OE CEN Address source CLK Operation DQ H X X L X X X L NA L to H DESELECT Cycle High-Z X X H L X X X L NA L to H DESELECT Cycle High-Z X L X L X X X L NA L to H DESELECT Cycle High-Z X X X H X X X L NA L to H CONTINUE DESELECT Cycle High-Z L H L L H X L L X X X H X X L L L H L L H X H L X X X H X X H L L H L L L L X L X X X H X L X L L H L L L H X L X X X H X H X L X X X X X X X H External L to H Next L to H READ Cycle (Begin Burst) Q READ Cycle (Continue Burst) Q External L to H NOP/DUMMY READ (Begin Burst) High-Z Next L to H External L to H Next L to H DUMMY READ (Continue Burst) L to H 1,10 2 High-Z 1,2,10 D 3 WRITE CYCLE (Continue Burst) D 1,3,10 High-Z 2,3 WRITE ABORT (Continue Burst) High-Z 1,2,3, 10 INHIBIT CLOCK - 4 Current L to H Key: X = Don’t Care, H = HIGH, L = LOW. BWn = H means all byte write signals (BWa, BWb) are HIGH. BWn = L means one or more byte write signals are LOW. Notes: 1 CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or WRITE) is chose in the initial BEGIN BURST cycle. A CONINUE DESELECT cycle can only be entered if a DESELECT CYCLE is executed first. 2 DUMMY READ and WRITE ABORT cycles can be considered NOPs because the device performs no external operation. A WRITE ABORT means a WRITE command is given, but no operation is performed. 3 OE may be wired LOW to minimize the number of control signal to the SRAM. The device will automatically turn off the output drivers during a WRITE cycle. OE may be used when the bus turn-on and turn-off times do not meet an application’s requirements. 4 If an INHIBIT CLOCK command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it occurs during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the INHIBIT CLOCK cycle. 5 BWa enables WRITEs to byte “a” (DQa pins); BWb enables WRITEs to byte “b” (DQb pins). 6 All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK. 7 Wait states are inserted by setting CEN HIGH. 8 This device contains circuitry that will ensure that the outputs will be in High-Z during power-up. 9 The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST CYCLE. 10 The address counter is incremented for all CONTINUE BURST cycles. 11 ZZ pin is always Low. 4/13/05, v 1.3 1 WRITE CYCLE (Begin Burst) External L to H NOP/WRITE ABORT (Begin Burst) Next Notes Alliance Semiconductor P. 6 of 18 AS7C33256NTF18B ® State diagram for NTD SRAM Burst Read Read Read Burst Read ea R d Burst Write Burst Dsel W rit e Write Read Dsel Dsel el Ds ite Wr Write Write Dsel Ds el Re ad Burst Burst Write Burst Absolute maximum ratings Parameter Symbol Min Max Unit VDD, VDDQ –0.5 +4.6 V Input voltage relative to GND (input pins) VIN –0.5 VDD + 0.5 V Power supply voltage relative to GND Input voltage relative to GND (I/O pins) VIN –0.5 VDDQ + 0.5 V Power dissipation PD – 1.8 W DC output current IOUT – 20 mA Storage temperature (plastic) Tstg –65 +150 o C Tbias –65 +135 o C Temperature under bias Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability. Recommended operating conditions at 3.3V I/O Parameter Supply voltage for inputs Supply voltage for I/O Ground supply *V DDQ Symbol Min Nominal Max Unit VDD 3.135 3.3 3.465 V VDDQ* 3.135 3.3 VDD V Vss 0 0 0 V Symbol Min Nominal Max Unit VDD 3.135 3.3 3.465 V VDDQ* 2.375 2.5 VDD V Vss 0 0 0 V cannot be greater than VDD Recommended operating conditions at 2.5V I/O Parameter Supply voltage for inputs Supply voltage for I/O Ground supply *V DDQ cannot be greater than VDD 4/13/05, v 1.3 Alliance Semiconductor P. 7 of 18 AS7C33256NTF18B ® DC electrical characteristics for 3.3V I/O operation Parameter Sym Conditions Min Max Unit current† |ILI| VDD = Max, 0V < VIN < VDD -2 2 µA Output leakage current |ILO| OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ -2 2 µA Input high (logic 1) voltage VIH Address and control pins 2* VDD+0.3 I/O pins 2* VDDQ+0.3 Input low (logic 0) voltage VIL Address and control pins -0.3** 0.8 I/O pins -0.5** 0.8 Output high voltage VOH IOH = –4 mA, VDDQ = 3.135V 2.4 – V Output low voltage VOL IOL = 8 mA, VDDQ = 3.465V – 0.4 V Input leakage V V DC electrical characteristics for 2.5V I/O operation Parameter Sym Conditions Min Max Unit Input leakage current† |ILI| VDD = Max, 0V < VIN < VDD -2 2 µA Output leakage current |ILO| OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ -2 2 µA Input high (logic 1) voltage VIH Address and control pins 1.7* VDD+0.3 V I/O pins 1.7* VDDQ+0.3 V Input low (logic 0) voltage VIL Address and control pins -0.3** 0.7 V I/O pins -0.3** 0.7 V Output high voltage VOH IOH = –4 mA, VDDQ = 2.375V 1.7 – IOH = –1 mA, VDDQ = 2.375V 2.0 – IOL = 8 mA, VDDQ = 2.625V – 0.7 IOL = 1 mA, VDDQ = 2.625V – 0.4 Output low voltage VOL V V † LBO pin has an internal pull-up and input leakage = -10 µA. * VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC **V IL min = -1.5 for pulse width less than 0.2 X tCYC IDD operating conditions and maximum limits Parameter Operating power supply current1 Sym ICC ISB Standby power supply current Conditions CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax, IOUT = 0 mA, ZZ < VIL All VIN ≤ 0.2V or > VDD – 0.2V, Deselected, f = fMax, ZZ < VIL -75 -80 -10 Unit 260 230 200 mA 110 100 90 ISB1 Deselected, f = 0, ZZ < 0.2V, all VIN ≤ 0.2V or ≥ VDD – 0.2V 30 30 30 ISB2 Deselected, f = fMax, ZZ ≥ VDD – 0.2V, all VIN ≤ VIL or ≥ VIH 30 30 30 mA 1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading. 4/13/05, v 1.3 Alliance Semiconductor P. 8 of 18 AS7C33256NTF18B ® Timing characteristics over operating range -75 Parameter Sym -80 -10 Min Max Min Max Min Max Unit Cycle time tCYC 8.5 – 10 – 12 – ns Clock access time tCD – 7.5 – 8.0 – 10 ns Output enable low to data valid tOE – 3.5 – 4.0 – 4.0 ns Notes1 Clock high to output low Z tLZC 2.5 – 2.5 – 2.5 – ns 2,3,4 Data Output invalid from clock high tOH 2.5 – 2.5 – 2.5 – ns 2 Output enable low to output low Z tLZOE 0 – 0 – 0 – ns 2,3,4 Output enable high to output high Z tHZOE – 3.5 – 4.0 – 4.0 ns 2,3,4 Clock high to output high Z tHZC – 3.5 – 4.0 – 4.0 ns 2,3,4 Clock high pulse width tCH 3.0 – 4.0 – 4.0 – ns 5 Clock low pulse width tCL 3.0 – 4.0 – 4.0 – ns 5 Address and Control setup to clock high tAS 2.0 – 2.0 – 2.0 – ns 6 Data setup to clock high tDS 2.0 – 2.0 – 2.0 – ns 6 Write setup to clock high tWS 2.0 – 2.0 – 2.0 – ns 6, 7 Chip select setup to clock high tCSS 2.0 – 2.0 – 2.0 – ns 6, 8 Address hold from clock high tAH 0.5 – 0.5 – 0.5 – ns 6 Data hold from clock high tDH 0.5 – 0.5 – 0.5 – ns 6 Write hold from clock high tWH 0.5 – 0.5 – 0.5 – ns 6, 7 Chip select hold from clock high tCSH 0.5 – 0.5 – 0.5 – ns 6, 8 Clock enable setup to clock high tCENS 2.0 – 2.0 – 2.0 – ns 6 Clock enable hold from clock high tCENH 0.5 – 0.5 – 0.5 – ns 6 ADV setup to clock high tADVS 2.0 – 2.0 – 2.0 – ns 6 ADV hold from clock high tADVH 0.5 – 0.5 – 0.5 – ns 6 1 See “Notes:” on page 15. Snooze Mode Electrical Characteristics Description Current during Snooze Mode ZZ active to input ignored ZZ inactive to input sampled ZZ active to SNOOZE current ZZ inactive to exit SNOOZE current 4/13/05, v 1.3 Conditions Symbol ZZ > VIH ISB2 tPDS tPUS tZZI tRZZI Alliance Semiconductor Min Max Units 30 mA cycle cycle cycle 2 2 2 0 P. 9 of 18 AS7C33256NTF18B ® Key to switching waveforms Rising input don’t care Falling input Undefined Timing waveform of read cycle tCH tCL tCYC CLK tCENS tCENH CEN tAS Address tAH A1 A2 A3 tWS tWH R/W tCSS tCSH CE0,CE2 CE1 tADVS tADVH ADV/LD OE tHZOE tOE Dout tLZOE Q(A1) Q(A2Y‘11) Q(A2) Q(A3) Q(A3Y‘01) Q(A2Y‘01) Q(A2Y‘10) Command 4/13/05, v 1.3 READ Q(A1) DSEL READ Q(A2) BURST BURST READ READ READ Q(A2Ý11) Q(A2Ý01) Q(A2Ý10) BURST Alliance Semiconductor STALL READ Q(A3) BURST READ Q(A3Ý01) P. 10 of 18 AS7C33256NTF18B ® Timing waveform of write cycle tCH tCL tCYC CLK tCENS tCENH CEN tAS tAH A1 Address A2 A3 R/W BWn tCSS tCSH CE0,CE2 CE1 tADVS tADVH ADV/LD OE tDS D(A1) Din tHZOE Dout Command 4/13/05, v 1.3 tDH D(A3) D(A2) D(A2Y‘01) D(A2Y‘10) D(A2Y‘11) D(A3Y‘01) Q(n-1) WRITE D(A1) DSEL WRITE D(A2) BURST BURST BURST WRITE WRITE WRITE D(A2Ý01) D(A2Ý10) D(A2Ý11) Alliance Semiconductor STALL WRITE D(A3) BURST WRITE D(A3Ý01) P. 11 of 18 AS7C33256NTF18B ® Timing waveform of read/write cycle tCH tCL tCYC CLK tCENS tCENH CEN tAS tAH A1 ADDRESS A3 A2 tWS tWH tWS tWH tCSS tCSH tADVS tADVH A4 A5 A6 A7 D(A5) Q(A6) R/W BWn CE0, CE2 CE1 ADV/LD OE tCD tDS tDH D/Q D(A1) tLZC D(A2) D(A2Ý01) tHZOE tOE tOH Q(A3) Q(A4) tHZC Q(A4Ý01) D(A7) tLZOE Command WRITE D(A1) WRITE D(A2) BURST WRITE D(A2Ý01) READ Q(A3) READ Q(A4) BURST READ Q(A4Ý01) WRITE D(A5) READ Q(A6) WRITE D(A7) DSEL Note: Ý = XOR when LBO = high/no connect. Ý = ADD when LBO = low. 4/13/05, v 1.3 Alliance Semiconductor P. 12 of 18 AS7C33256NTF18B ® NOP, stall and deselect cycles CLK CEN CE1 CE0, CE2 ADV/LD R/W BWn Address A2 A1 D/Q Command Q(A1) READ Q(A1) Q(A1Ý01) BURST STALL Q(A1Ý01) A3 D(A2) Q(A1Ý10) BURST DSEL Q(A1Ý10) BURST DSEL WRITE D(A2) BURST BURST WRITE NOP D(A2Ý10) NOP D(A2Ý01) D(A3) Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low. OE is low. 4/13/05, v 1.3 Alliance Semiconductor P. 13 of 18 AS7C33256NTF18B ® Timing waveform of snooze mode CLK tPUS ZZ setup cycle ZZ recovery cycle ZZ tZZI Isupply ISB2 tRZZI All inputs (except ZZ) Deselect or Read Only Deselect or Read Only Normal operation Cycle Dout 4/13/05, v 1.3 High-Z Alliance Semiconductor P. 14 of 18 AS7C33256NTF18B ® AC test conditions • Output load: For tLZC, tLZOE, tHZOE, and tHZC, see Figure C. For all others, see Figure B. • Input pulse level: GND to 3V. See Figure A. Thevenin equivalent: • Input rise and fall time (measured at 0.3V and 2.7V): 1.0V/ns. See Figure A. +3.3V for 3.3V I/O; /+2.5V for 2.5V I/O • Input and output timing reference levels: 1.5V. +3.0V Z0 = 50Ω 90% 90% 10% GND 50Ω VL = 1.5V for 3.3V I/O; 30 pF* = V DDQ/2 for 2.5V I/O DOUT 10% Figure A: Input waveform Figure B: Output load (A) 319Ω/1667Ω DOUT 5 pF* 353Ω/1538Ω GND *including scope and jig capacitance Figure C: Output load(B) Notes: 1) For test conditions, see “AC test conditions”, Figures A, B, C 2) This parameter measured with output load condition in Figure C. 3) This parameter is sampled, but not 100% tested. 4) tHZOE is less than tLZOE and tHZC is less than tLZC at any given temperature and voltage. 5) tCH measured high above VIH and tCL measured as low below VIL 6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled. 7) Write refers to R/W and BW[a,b]. 8) Chip select refers to CE0, CE1, and CE2. 4/13/05, v 1.3 Alliance Semiconductor P. 15 of 18 AS7C33256NTF18B ® Package dimensions 100-pin quad flat pack (TQFP) Hd A1 A2 b c D E e Hd He L L1 a TQFP Min Max 0.05 0.15 1.35 1.45 0.22 0.38 0.09 0.20 13.90 14.10 19.90 20.10 0.65 nominal 15.90 16.10 21.90 22.10 0.45 0.75 1.00 nominal 0° 7° Dimensions in millimeters D b e He E α c L1 L 4/13/05, v 1.3 Alliance Semiconductor A1 A2 P. 16 of 18 AS7C33256NTF18B ® Ordering information Package TQFP TQFP Width x18 x18 -75 AS7C33256NTF18B-75TQC AS7C33256NTF18B-75TQI –80 AS7C33256NTF18B-80TQC AS7C33256NTF18B-80TQI –10 AS7C33256NTF18B-10TQC AS7C33256NTF18B-10TQI Note: Add suffix ‘N’ to the above part numbers for Lead Free Parts (Ex. AS7C33256NTF18B-75TQCN) Part numbering guide AS7C 33 256 NTF 18 B –XX TQ C/I X 1 2 3 4 5 6 7 8 9 10 1. Alliance Semiconductor SRAM prefix 2. Operating voltage: 33 = 3.3V 3. Organization: 256 = 256K 4. NTF = No Turn-Around Delay. Flow-through mode 5. Organization: 18 = x18 6. Production version: B = Product revision 7. Clock access time: [-75 = 7.5 ns; -80 = 8.0 ns; -10 = 10.0] 8. Package type: TQ = TQFP 9. Operating temperature: C = commercial (0° C to 70° C); I = industrial (-40° C to 85° C) 10. N = Lead free part 4/13/05, v 1.3 Alliance Semiconductor P. 17 of 18 AS7C33256NTF18B ® ® Alliance Semiconductor Corporation Copyright © Alliance Semiconductor 2575, Augustine Drive, All Rights Reserved Santa Clara, CA 95054 Part Number: AS7C33256NTF18B Tel: 408 - 855 - 4900 Document Version: v 1.3 Fax: 408 - 855 - 4999 www.alsc.com © Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. 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