ANACHIP AF4407PS

AF4407P
P-Channel 30-V (D-S) MOSFET
Features
General Description
-Low rDS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Extended VGS range (±25) for battery pack
applications
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry.
Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
Product Summary
VDS (V)
rDS(on) (mΩ)
ID (A)
-30
[email protected]=-10V
[email protected]=-4.5V
-15
-11
Pin Descriptions
Pin Assignments
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
Pin Name
Description
S
G
D
Source
Gate
Drain
SOP-8
Ordering information
Feature
F :MOSFET
A X
4407P X X X
PN
Package
Lead Free
Packing
S: SOP-8
Blank : Normal
L : Lead Free Package
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Jul 16, 2004
1/5
AF4407P
P-Channel 30-V (D-S) MOSFET
Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Symbol
VDS
VGS
Parameter
TA=25ºC
TA=70ºC
ID
Continuous Drain Current (Note 1)
IDM
IS
Pulsed Drain Current (Note 2)
Continuous Source Current (Diode Conduction) (Note 1)
TA=25ºC
Power Dissipation (Note 1)
TA=70ºC
Operating and Storage Junction Temperature Range
PD
TJ, TSTG
Rating
-30
±25
-15
-11
±50
-2.1
3.1
2.3
-55 to 150
Drain-Source Voltage
Gate-Source Voltage
Units
V
V
A
A
A
W
ºC
Thermal Resistance Ratings
Symbol
RθJC
RθJA
Parameter
Maximum Junction-to-Case (Note 1)
Maximum Junction-to-Ambient (Note 1)
Maximum
25
50
t < = 5 sec
t < = 5 sec
Units
ºC/W
ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (TA=25ºC unless otherwise noted)
Symbol
Static
V(BR)DSS
VGS(th)
IGSS
Min.
Limits
Typ.
Max.
-30
-1
-
-1.6
-
-3
±100
-1
-
-
-5
-50
-
7.3
10
9
13
-
9
11
-
44
-0.7
-1.2
S
V
VDS=-15V, VGS=-10V,
ID=-13A
-
71
12
15
100
-
nC
VDD=-15V, RL=6Ω,
ID=-1A, VGEN=-10V
-
19
11
121
68
36
21
186
112
nS
Parameter
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
ID(on)
On-State Drain Current (Note 3)
rDS(on)
Drain-Source On-Resistance (Note 3)
gfs
Forward Tranconductance (Note 3)
VSD
Diode Forward Voltage
Dynamic (Note 4)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Switching
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall-Time
Test Conditions
VGS=0V, ID=-250uA
VDS= VGS, ID=-250uA
VDS=0V, VGS=±25V
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V,
TJ=55ºC
VGS=-5V, VDS=-10V
VGS=-10V, ID=-13A
VGS=-4.5V, ID=-11A
VGS=-10V, ID=-13A,
TJ=55ºC
VGS=-5V, ID=-13A
IS=2.1A, VGS=0V
Unit
V
V
nA
uA
A
mΩ
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Jul 16, 2004
2/5
AF4407P
P-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 3. On-Resistance Variation
With Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
With Source Current and Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Jul 16, 2004
3/5
AF4407P
P-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction To Ambient
Figure 11. Transient Thermal Response Curve
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Jul 16, 2004
4/5
AF4407P
P-Channel 30-V (D-S) MOSFET
Marking Information
SOP-8L
( Top View )
8
Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Logo
4407P
AA Y W X
Part Number
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
~
Factory code
Package Information
H
E
Package Type: SOP-8L
L
VIEW "A"
D
0.015x45
C
B
A1
e
7 (4X)
A
A2
7 (4X)
VIEW "A"
y
Symbol
A
A1
A2
B
C
D
E
e
H
L
y
θ
Dimensions In Millimeters
Min.
Nom.
Max.
1.40
1.60
1.75
0.10
0.25
1.30
1.45
1.50
0.33
0.41
0.51
0.19
0.20
0.25
4.80
5.05
5.30
3.70
3.90
4.10
1.27
5.79
5.99
6.20
0.38
0.71
1.27
0.10
O
O
8
0
Anachip Corp.
www.anachip.com.tw
Dimensions In Inches
Min.
Nom.
Max.
0.055
0.063
0.069
0.040
0.100
0.051
0.057
0.059
0.013
0.016
0.020
0.0075
0.008
0.010
0.189
0.199
0.209
0.146
0.154
0.161
0.050
0.228
0.236
0.244
0.015
0.028
0.050
0.004
O
O
0
8
Rev. 1.0 Jul 16, 2004
5/5