ANACHIP AF4928NS

AF4928N
N-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
- Low On-resistance
- Simple Drive Requirement
- Dual N MOSFET Package
- Pb Free Plating Product
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
„ Product Summary
BVDSS (V)
30
RDS(ON) (mΩ)
26
ID (A)
6.8
„ Pin Descriptions
„ Pin Assignments
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Pin Name
Description
S1/2
G1/2
D1/2
Channel 1/2 Source
Channel 1/2 Gate
Channel 1/2 Drain
SO-8
„ Ordering information
Feature
F :MOSFET
A X
4928N X X
PN
Package
Packing
S: SO-8
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 13, 2005
1/5
AF4928N
N-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25ºC
TA=70ºC
ID
Continuous Drain Current (Note 1)
IDM
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
Rating
30
±20
6.8
5.5
40
2
0.016
-55 to 150
-55 to 150
TA=25ºC
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient (Note 1)
Maximum
62.5
Max.
Units
ºC/W
„ Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance (Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
Drain-Source Leakage Current
(TJ=70oC)
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
∆BVDSS / ∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
RG
Test Conditions
Min.
Typ.
Max.
Units
30
-
-
V
-
0.03
-
V/oC
1
-
15
26
40
3
-
VDS=30V, VGS=0V
-
-
1
VDS=24V, VGS=0V
-
-
25
VGS=±20V
ID=6.8A,
VDS=24V,
VGS=4.5V
VDS=15V,
ID=1A,
RG=3.3Ω, VGS=10V
RD=15Ω
VGS=0V,
VDS=25V,
f=1.0MHz
f=1.0MHz
-
9
2
6
10
9
18
6
580
150
108
0.9
±100
15
930
-
Test Conditions
IS=1.7A, VGS=0V
IS=6.8A, VGS=0V,
dl/dt=100A/µs
Min.
-
Typ.
15
9
Max.
1.3
-
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
VGS=10V, ID=6A
VGS=4.5V, ID=4A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
mΩ
V
S
uA
nA
nC
ns
pF
Ω
„ Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage (Note 3)
Reverse Recovery Time (Note 3)
Reverse Recovery Charge
2
o
Unit
V
ns
nC
Note 1: Surface mounted on 1 in copper pad of FR4 board; 135 C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
2/5
Oct 13, 2005
AF4928N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction
Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
3/5
Oct 13, 2005
AF4928N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
4/5
Oct 13, 2005
AF4928N
N-Channel Enhancement Mode Power MOSFET
„ Marking Information
SO-8
( Top View )
8
Lot code:
"A~Z": 01~26;
"A~Z": 27~52
Logo
4928N
AA Y W X
Part Number
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
~
Factory code
„ Package Information
Package Type: SO-8
D
7
6
5
2
3
4
E1
E
8
1
L
DETAIL A
B
C
A1
A
e
θ
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A
A1
B
C
D
E
E1
L
θ
e
Dimensions In Millimeters
Min.
Nom.
Max.
1.35
1.55
1.75
0.10
0.18
0.25
0.33
0.41
0.51
0.19
0.22
0.25
4.80
4.90
5.00
5.80
6.15
6.50
3.80
3.90
4.00
0.38
0.71
1.27
0o
4o
8o
1.27 TYP.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
5/5
Oct 13, 2005