ASS355 SMD Switching Diode Features General Description IO = 100mA VR = 80V 0603(1608) 0.071(1.80) 0.063(1.60) - Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) - High speed switching. - High mounting capability, strong surge withstand, 0.033(0.85) 0.028(0.70) high reliability. 0.010(0.25)Typ. - Extremely thin package. - Lead-free device 0.012(0.30)Typ. 0.014(0.35)Typ. Dimensions in inches and (millimeter) 1005(2512) P+ 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) Mechanical Data 0.035(0.90) 0.027(0.70) - Case : 0603(1608) 1005(2512) standard package, 0.014(0.35)Typ. molded plastic. 0.12(0.30)Typ. - Terminals : Gold plated, solderable per MIL-STD-750, method 2026. 0.014(0.35)Typ. - Polarity : Indicated by cathode band. Dimensions in inches and (millimeter) - Mounting position : Any. - Weight : BD:0.003gram (approximately) BF:0.006gram (approximately) Ordering information A Feature SS : Small Singal XX 355 PN XX Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 0.0 Oct 29, 2003 1/3 ASS355 SMD Switching Diode Maximum Rating (at TA=25ºC unless otherwise noted) Symbol Parameter VRRM Conditions Min Typ Max Unit Repetitive peak reverse voltage - - 90 V VR Reverse voltage - - 80 V IO Average forward current - - 100 mA - 1000 - - 1000 - - - 150 300 mW - - 225 mA 8.3ms single half sine-wave superimposed on rate load (JEDEC method) 0603 IFSM Forward current, surge peak PD Power Dissipation IFRM Repetitive peak forward current TSTG Storage temperature -40 - +125 ºC Tj Junction temperature -40 - +125 ºC 1005 0603 1005 mA Electrical Characteristics (at TA=25ºC unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward voltage IF=100mADC - - 1.0 V IR Reverse current VR=80V - - 0.1 µA CT Capacitance between terminals F=1MHz, and 0.5 VDC reverse voltage - 3 - pF Trr Reverse recovery time VR=6V, IF=10mA, RL=50ohms - 4 - nS Anachip Corp. www.anachip.com.tw Rev. 0.0 Oct 29, 2003 2/3 ASS355 SMD Switching Diode Rating And Characteristic Curves Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1000 10u 125 oC 1u Reverse current (A) Forward current (mA) 100 10 125 o C 75 o C 25 oC -25 o C 1 0.1 75oC 100n 10n 25oC 1n -25oC 0.01 0.1n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 10 20 30 40 50 60 70 80 90 100 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Fig. 4 - Current derating curve f=1MHz Ta=25oC Mounting on glass epoxy PCBs Average forward current (%) Capacitance between terminals:(pF) 5.0 4.0 3.0 2.0 1.0 0 100 80 60 40 20 0 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 Ambient temperature (oC) Reverse voltage (V) Marking Information ASS355 S4 Anachip Corp. www.anachip.com.tw Rev. 0.0 Oct 29, 2003 3/3