ANADIGICS AWS5522D1

AWS5522
0.5 to 2.5 GHz SPDT Switch
ADVANCED PRODUCT INFORMATION - Rev 0.1
FEATURES
•
•
•
•
•
Low Insertion Loss: 0.5 dB at 2 GHz
High Isolation: > 25 dB
Low Harmonic Levels: < -65 dBc
Low Control Voltage Operation: to +2.5 V
Low Profile Surface Mount Package
AW
S55
22
APPLICATIONS
•
•
GSM Wireless Handsets and
Front-end Modules
CDMA Wireless Handsets and
Front-end Modules
S26 Package
12 Pin MLF
3mm x 3mm
D1
Die
PRODUCT DESCRIPTION
The AWS5522 is a single pole, double throw (SPDT)
RF switch developed to meet the stringent
requirements of GSM and CDMA systems.
Manufactured in ANADIGICS’s state-of-the-art
pHEMT process, the device uses patent-pending
VS1
circuit topologies to provide the low insertion loss, high
port-to-port isolation and high linearity needed to
enhance the performance of wireless handset radios.
The AWS5522 is offered both as an MMIC die and in
a 12-lead 3mm x 3mm MLF package.
RFC
VS2
RF2
RF1
RF1G
V1
V2
RF2G
Figure 1: Block Diagram
12/2002
AWS5522
Table 1 : Pad Description
NAME
RF1
VS1
RF1G
VS1
Common port bias
voltage (logic high)
RF1
RF port, path 1
RF1G
V1
RFC
DESCRIPTION
Ground
V1
Control voltage,
RF path 1
V2
Control voltage,
RF path 2
V2
RF2G
RF2G
RF2
Ground
RF2
RF port, path 2
VS2
Common port bias
voltage (logic high)
RFC
RF common port
VS2
Dimensions in µm.
Bond Pads: 100µm x75µm
Die Thickness: 178µm
No backside metal.
Figure 2 : Die Configuration
Table 2: Pin Description
PIN
NAME
2
RF1
RF port, path 1
4
V1
Control voltage,
RF path 1
NC RFC VS2
12
11
10
NC
1
9
NC
RF1
2
8
RF2
6
V2
Control voltage,
RF path 2
GND
3
7
GND
8
RF2
RF port, path 2
10
VS2
Common port bias
Voltage (logic high)
11
RFC
RF common port
3, 7
GND
Ground
1, 5, 9, 12
NC
4
5
V1 NC
6
V2
Figure 3: Packaged Device
Pinout (X-ray Top View)
2
DESCRIPTION
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
No connection
AWS5522
ELECTRICAL CHARACTERISTICS
Table 3: Absolute Minimum and Maximum Ratings
MIN
MAX
UNIT
Common Port Bias Voltage (VS)
-0.2
+8.0
V
Control Voltages (V1, V2)
-0.2
+8.0
V
-
10
W
-65
+150
°C
PARAMETER
RF Input Power (PIN)
Storage Temperature (2)
COMMENTS
at VS1 or VS2 (1)
at RF1, RF2 and RFC
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not
implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely
affect reliability.
Notes:
(1) The VS1 and VS2 ports may remain open-circuited without damage to the device.
(2) Storage Temperature limits apply to the die only after it has been removed from the ANADIGICS
shipping material. (The limits apply at all times for the packaged device.)
3. The RF1, RF2 and RFC ports should be AC-coupled. No external DC bias should be applied.
Table 4: Operating Ranges
PARAMETER
RF Frequency (f)
MIN
TYP
MAX
UNIT
0.5
-
2.5
GHz
Common Port Bias Voltage (VS)
COMMENTS
applied at either VS1
or VS2 port
(1)
Control Voltages (V1, V2)
0
+2.5
-
+0.2
+3.5
V
Ambient Temperature (TA)
-30
-
+85
°C
RF path OFF state
RF path ON state
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For optimal linearity performance, the Common Port Bias Voltage (VS) should be set to the same Control Voltage used
to turn ON either of the individual RF paths. The VS1 and VS2 ports may remain open-circuited without damage to the
device, but with some degradation in linearity.
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
3
AWS5522
Table 5: Electrical Specifications - Unpackaged Die
(TA = +25 °C; RF ports terminated with 50 Ω; Vn = +2.7 V and is the Control Voltage
for the ON path, RFC-RFn; Vx = 0 V and is the Control Voltage for the OFF path, RFC-RFx)
PARAMETER
MIN
TYP
MAX
UNIT
Insertion Loss
1 GHz
2 GHz
-
0.4
0.5
0.6
0.8
dB
RFC port to selected RFn port
Return Loss (1)
1 GHz
2 GHz
-
-30
-32
-20
-20
dB
RFC port and selected RFn port
25
25
27
27
-
dB
RFC port to isolated RFx port
Input Third Order Intercept (2)
800 MHz Cellular Band
1900 MHz PCS Band
-
+60
+59
-
dBm
RFC port to selected RFn port
2nd Harmonic Rejection (3)
1 GHz
2 GHz
-
-79
-78
-65
-65
dBc
PIN = +34 dBm
PIN = +32 dBm
3rd Harmonic Rejection (3)
1 GHz
2 GHz
-
-88
-81
-65
-65
dBc
PIN = +34 dBm
PIN = +32 dBm
-
-
30
5
µA
µA
each Vn port
VS1 or VS2 port
Isolation
1 GHz
2 GHz
Current Consumption
COMMENTS
Notes:
(1) The isolated RFx port has a return loss of approximately -3 dB.
(2) For the Cellular Band, two tones with PIN = +22.5 dBm each, at 900.0 and 900.1 MHz. For the PCS Band, two tones
with PIN = +21 dBm each, at 1900.0 and 1900.1 MHz.
(3) Vs = Vn
Table 6: Switch Control Truth Table
CONTROL VOLTAGES
4
RF PATH SELECTION
V1
V2
RFC - RF1
RFC - RF2
+2.5 to +3.5 V
0 to +0.2 V
ON
OFF
0 to +0.2 V
+2.5 to +3.5V
OFF
ON
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5522
Table 7: Electrical Specifications - Packaged Device
(TA = +25 °C; RF ports terminated with 50 Ω; Vn = +2.7 V and is the Control Voltage
for the ON path, RFC-RFn; Vx = 0 V and is the Control Voltage for the OFF path, RFC-RFx)
PARAMETER
MIN
TYP
MAX
UNIT
Insertion Loss
1 GHz
2 GHz
-
0.4
0.5
-0.6
-0.8
dB
RFC port to selected RFn port
Return Loss (1)
1 GHz
2 GHz
-
-28
-33
-20
-20
dB
RFC port and selected RFn port
25
25
27
27
-
dB
RFC port to isolated RFx port
Input Third Order Intercept (2)
800 MHz Cellular Band
1900 MHz PCS Band
-
+60
+59
-
dBm
RFC port to selected RFn port
2nd Harmonic Rejection (3)
1 GHz
2 GHz
-
-75
-76
-65
-65
dBc
PIN = +34 dBm
PIN = +32 dBm
3rd Harmonic Rejection (3)
1 GHz
2 GHz
-
-70
-74
-65
-65
dBc
PIN = +34 dBm
PIN = +32 dBm
-
-
30
5
µA
µA
each Vn port
VS2 port
Isolation
1 GHz
2 GHz
Current Consumption
COMMENTS
Notes:
(1) The isolated RFx port has a return loss of approximately -3 dB.
(2) For the Cellular Band, two tones with PIN = +22.5 dBm each, at 900.0 and 900.1 MHz. For the PCS Band, two tones
with PIN = +21 dBm each, at 1900.0 and 1900.1 MHz.
(3) Vs = Vn
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
5
AWS5522
PERFORMANCE DATA
Figure 5: Insertion Loss vs. Frequency
Packaged Device
(ON path, Vn = +2.7 V, Vx = 0 V)
0
0
-0.2
-0.2
Insertion Loss (dB)
Insertion Loss (dB)
Figure 4: Insertion Loss vs. Frequency
Unpackaged Die
(ON path, Vn = +2.7 V, Vx = 0 V)
-0.4
-0.6
-0.8
-0.4
-0.6
-0.8
-1
500
1000
1500
2000
-1
500
2500
1000
Frequency (MHz)
Figure 6: Return Loss vs. Frequency
Upackaged Die
(ON path, Vn = +2.7 V, Vx = 0 V)
RFC port
RFn port
-10
Return Loss (dB)
Return Loss (dB)
-10
-20
-30
-40
-20
-30
-40
1000
1500
2000
-50
500
2500
1000
Frequency (MHz)
2000
2500
Figure 9: Isolation vs. Frequency
Packaged Device
(OFF path, Vn = +2.7 V, Vx = 0 V)
0
0
-10
-10
Isolation (dB)
Isolation (dB)
1500
Frequency (MHz)
Figure 8: Isolation vs. Frequency
Unpackaged Die
(OFF path, Vn = +2.7 V, Vx = 0 V)
-20
-30
-40
-20
-30
-40
1000
1500
2000
2500
-50
500
1000
Frequency (MHz)
6
2500
0
RFC port
RFn port
-50
500
2000
Figure 7: Return Loss vs. Frequency
Packaged Device
(ON path, Vn = +2.7 V, Vx = 0 V)
0
-50
500
1500
Frequency (MHz)
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
1500
Frequency (MHz)
2000
2500
AWS5522
Figure 10:
Harmonics of 1 GHz vs. Control Voltage
Unpackaged Die
(ON path, Vx = 0 V, f = 1 GHz, PIN = +34 dBm)
Figure 11:
Harmonics of 1 GHz vs. Control Voltage
Packaged Device
(ON path, Vx = 0 V, f = 1 GHz, PIN = +34 dBm)
-30
-30
2nd Harmonic, Vs open
2nd Harmonic, Vs = Vn
3rd Harmonic, Vs open
3rd Harmonic, Vs = Vn
2nd Harmonic, Vs open
2nd Harmonic, Vs = Vn
3rd Harmonic, Vs open
3rd Harmonic, Vs = Vn
-40
-50
Harmonic Level (dBc)
Harmonic Level (dBc)
-40
-60
-70
-80
-90
-50
-60
-70
-80
-90
-100
-100
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
2.5
2.6
2.7
2.8
Control Voltage (V)
Figure 12:
Harmonics of 2 GHz vs. Control Voltage
Unpackaged Die
(ON path, Vx = 0 V, f = 2 GHz, PIN = +32 dBm)
3
3.1
3.2
3.3
3.4
3.5
Figure 13:
Harmonics of 2 GHz vs. Control Voltage
Packaged Device
(ON path, Vx = 0 V, f = 2 GHz, PIN = +32 dBm)
-30
-30
2nd Harmonic, Vs open
2nd Harmonic, Vs = Vn
3rd Harmonic, Vs open
3rd Harmonic, Vs = Vn
-40
2nd Harmonic, Vs open
2nd Harmonic, Vs = Vn
3rd Harmonic, Vs open
3rd Harmonic, Vs = Vn
-40
-50
Harmonic Level (dBc)
Harmonic Level (dBc)
2.9
Control Voltage (V)
-60
-70
-80
-90
-50
-60
-70
-80
-90
-100
-100
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
2.5
2.6
2.7
2.8
Control Voltage (V)
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
2.9
3
3.1
3.2
3.3
3.4
3.5
Control Voltage (V)
7
AWS5522
APPLICATION INFORMATION
Unpackaged Die Applications
Bonding and circuit connections for the unpackaged
AWS5522 die are shown in Figure 14, and application
details are listed in the following notes:
3. The RF Ground bondwires should be kept as short
as possible and bonded directly to a good RF ground
for best broadband performance.
1. Cb are DC blocking capacitors external to the
device. A value of 100pF is sufficient for operation to
500MHz. The values may be tailored to provide
specific electrical responses. The isolation of the switch
provides enough decoupling of the RF1 and RF2 ports
so that overall switch performance is not affected.
4. L ESD provides a means to increase the ESD
protection on a specific RF port, typically the port
attached to the antenna. The ESD rating of the device
is ±125V HBM overall. This rating is associated with
the control pin to RF port path. RF port to RF port/RF
Gnd has been determined to be >±500V HBM for this
technology. By using LESD as an RF choke on a port,
an ESD protection to ±8kV contact discharge can be
achieved.
2. The VS1 and VS2 pins provides a fixed voltage
potential to the common port of the switch. To get the
best linear performance, either VS1 or VS2 should be
tied to the logic high voltage potential (not the power
supply). Only one of these pins need be attached, with
the decision determined by external circuit layout.
Current draw on this pin is less than 5µA.
5. The die may be attached by either conductive or
non-conductive epoxy formulated for attaching
semiconductor parts. The back of the die is electrically
isolated from the switch circuit and can be grounded
or left isolated.
Common (Ant.) RF Port
LESD
Cb
Note 4
Common Port
Supply
Note 2 (Logic high)
Cb
RF Port 1
RFC
VS1
RF1
RF1G
Cb
VS2
RF Port 2
RF2
V1
V2
RF2G
Keep RF Gnd Bondwires Short
2 Places, Note 3
RF Gnd, Path 1 Shunt
Control Pin, RF Path 1
RF Gnd, Path 2 Shunt
Control Pin, RF Path 2
Figure 14: Unpackaged Die Application Schematic
8
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5522
Packaged Device Applications
External component requirements for the packaged
AWS5522 device are shown in Figure 15, and
application details are listed in the following notes:
1. Cb are DC blocking capacitors external to the
device. A value of 100pF is sufficient for operation to
500MHz. The values may be tailored to provide
specific electrical responses. The isolation of the
switch provides enough decoupling of the RF1 and
RF2 ports so that overall switch performance is not
affected.
2. The VS2 pin provides a fixed voltage potential to
the common port of the switch. To get the best linear
performance, VS2 should be tied to the logic high
voltage potential (not the power supply). Current draw
on this pin is less than 5µA.
3. The RF Ground connections should be kept as short
as possible and tied directly to a good RF ground for
best broadband performance.
4. LESD provides a means to increase the ESD protection
on a specific RF port, typically the port attached to the
antenna. The ESD rating of the device is ±125V HBM
overall. This rating is associated with the control pin to
RF port path. RF port to RF port/RF Gnd has been
determined to be >±500V HBM for this technology. By
using LESD as an RF choke on a port, an ESD protection
to ±8kV contact discharge can be achieved.
5. The large pad on the bottom of the package should
be soldered to ground to assure proper performance
of the device.
Common (Ant.) RF Port
LESD
Cb
Note 4
NC
RFC
VS2
Common Port
Supply
12
11
10
Note 2 (Logic high)
NC
1
9
NC
RF1
2
8
RF2
3
7
Cb
4
5
6
NC
V2
RF Gnd, Path 1 Shunt
V1
Cb
RF Port 1
Control Pin, RF Path 1
RF Port 2
RF Gnd, Path 2 Shunt
Keep RF Gnd Connection
Short
2 Places, Note 3
Control Pin, RF Path 2
Figure 15: Packaged Device Application Schematic
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
9
AWS5522
PACKAGE OUTLINE
0.08
7.
2X
0.15
D1
C A
D
A
C
A
A3
b
0.20 DIA.
A1
2X
4.
0.48 TYP.
0.15
0.10 M C A B
6.
5.
PIN #1 ID
R0.20
C B
1
1
2
2
E
3
E
3
L
e
C
B
SEATING PLANE
TOP VIEW
BOTTOM VIEW
NOTES :
S
Y
M
B
O
L
DIMENSIONS-MM
NOM.
MAX.
MIN.
A
A1
A3
b
D
D1
E
E1
e
0.80
0.00
L
0.35
0.18
1.45
1.45
0.85
0.01
0.20 REF.
0.23
3.00 BSC
1.60
3.00 BSC
1.60
0.50 BSC
0.40
1.00
0.05
0.30
1.75
1.75
0.55
N
O
T
E
S
Y
M
B
O
L
A
A1
A3
b
D
D1
E
E1
e
L
DIMENSIONS-INCHES
MIN.
NOM.
MAX.
0.031
0.000
0.007
0.057
0.057
0.014
0.033
0.0003
0.008
0.009
0.118 BSC
0.063
0.118 BSC
0.063
0.019 BSC
0.016
0.039
0.001
0.011
0.069
0.069
0.022
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. MAX. PACKAGE WARPAGE IS 0.05 mm.
3. MAXIMUM ALLOWABLE BURRS IS 0.076 mm IN ALL DIRECTIONS.
N
O
T
E
4. PIN #1 ID ON TOP WILL BE LASER/INK MARKED.
5. APPLIED ONLY FOR TERMINALS
6. DIMENSION b APPLIES TO METALLIZED TERMINAL
AND IS MEASURED BETWEEN 0.20 AND 0.25mm
FROM TERMINAL TIP.
7. APPLIED FOR EXPOSED PAD AND TERMINALS.
EXCLUDE EMBEDDING EXPOSED PART
FROM MEASURING.
8. REFERENCE JEDEC OUTLINE MO-220.
Figure 16: S26 Package Outline - 12 Pin 3mm x 3mm MLF
P8_2035
10
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5522
NOTES
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
11
AWS5522
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
AWS5522D1
-30 °C to +85 °C
Die
(contact ANADIGICS for details)
AWS5522S26
-30 °C to +85 °C
12 Pin 3mm x
3mm MLF
Tape & Reel
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to
be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to
verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
12
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002