AAT7357 20V P-Channel Power MOSFET General Description Features The AAT7357 is a low threshold dual MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra high density MOSFET process and space saving small outline Jlead package, performance superior to that normally found in a TSSOP-8 footprint has been squeezed into the footprint of a TSOPJW-8 package. • • • VDS(MAX) = -20V ID(MAX) 1 = -5A @ 25°C Low RDS(ON): • 39 mΩ @ VGS = -4.5V • 63 mΩ @ VGS = -2.5V Dual TSOPJW-8 Package • • • Top View Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment Absolute Maximum Ratings Symbol VDS VGS D1 D1 D2 D2 8 7 6 5 1 S1 2 G1 3 S2 4 G2 (TA=25°C unless otherwise noted) Description Value Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C IDM IS Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) PD Maximum Power Dissipation 1 °C Typ Max Units 115 64 60 140 78 72 °C/W °C/W °C/W 1 TA = 25°C TA = 70°C 1 Units -20 ±12 ±5 ±4 ±12 -1.3 1.6 1.0 -55 to 150 TA = 25°C TA = 70°C ID TJ, TSTG Advanced Information Applications Operating Junction and Storage Temperature Range V A W Thermal Characteristics Symbol RθJA RθJA2 RθJF 7357.2003.08.0.6 Description Junction-to-Ambient steady state, one FET on Junction-to-Ambient t<5 seconds 1 Junction-to-Foot 1 1 1 AAT7357 20V P-Channel Power MOSFET Electrical Characteristics Symbol (TJ=25°C unless otherwise noted) Description DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source ON-Resistance ID(ON) VGS(th) IGSS On-State Drain Current 2 Gate Threshold Voltage Gate-Body Leakage Current IDSS 2 Drain Source Leakage Current gfs Forward Transconductance 2 Dynamic Characteristics 3 QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1 Conditions Min VGS=0V, ID=-250µA VGS=-4.5V, ID=-5A VGS=-2.5V, ID=-4A VGS=-4.5V, VDS=-5V (Pulsed) VGS=VDS, ID=-250µA VGS=±12V, VDS=0V VGS=0V, VDS=-20V VGS=0V, VDS=-16V, TJ=70°C 3 VDS=-5V, ID=-5A -20 VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, 2 RD=2.0Ω, RD=2.0Ω, RD=2.0Ω, RD=2.0Ω, RD=2.0Ω, RD=2.0Ω, RD=2.0Ω, VGS=0, IS=-5A VGS=-4.5V VGS=-4.5V VGS=-4.5V VGS=-4.5V, VGS=-4.5V, VGS=-4.5V, VGS=-4.5V, Typ Max V 30 49 39 63 -12 -0.6 ±100 -1 -5 12 RG=6Ω RG=6Ω RG=6Ω RG=6Ω Units mΩ A V nA µA S 14 3.5 5.6 TBD TBD TBD TBD nC ns -1.2 -1.3 V A Notes: 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300 µs 3. Guaranteed by design. Not subject to production testing. 2 7357.2003.08.0.6 AAT7357 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Output Characteristics Transfer Characteristics 12 12 4V through 10V 3.5V 8 25°C 8 ID (A) 2V IDS (A) VD = VG 10 3V 6 4 4 2.5V 1.5V 125°C 2 -55°C 0 0 0 0 0.5 1 1.5 2 1 2 VDS (V) On-Resistance vs. Drain Current On-Resistance vs. Gate to Source Voltage 0.08 0.08 0.06 VGS = 2.5 V RDS(ON) (mΩ) RDS(ON) (Ω) 0.06 0.04 VGS = 4.5 V 0.02 0.04 0.02 0 0 0 5 10 15 0 20 1 2 3 4 6 7 8 9 10 Threshold Voltage On-Resistance vs. Junction Temperature 1.8 0.5 VGS = 4.5V ID = 4.5A VGS(th) Variance (V) 1.6 5 VGS (V) ID (A) Normalized RDS(ON) 4 3 VGS (V) 1.4 1.2 1.0 ID = 250µA 0.4 0.3 0.2 0.1 0 -0.1 -0.2 0.8 -0.3 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ (°C) TJ (°C) 7357.2003.08.0.6 3 AAT7357 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Source-Drain Diode Forward Voltage Single Pulse Power, Junction to Ambient 40 100 35 30 IS (A) Power (W) 10 TJ = 25°C TJ = 150°C 1 25 20 15 10 5 0 0.1 0 0 .2 0.4 0 .6 0.8 1 1.00E-03 1.00E-02 1.00E-01 1.00E+01 1.00E+01 1.00E+02 1.00E+03 1.2 VSD (V) Time (s) Normalized Effective Transient Thermal Impedance Transient Thermal Response, Junction to Ambient 10 1 .5 0.1 0.01 .2 .1 .02 .01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s) 4 7357.2003.08.0.6 AAT7357 20V P-Channel Power MOSFET Ordering Information Package Marking Part Number (Tape and Reel) TSOPJW-8 AAT7357ITS-T1 Package Information TSOPJW-8 2.85 ± 0.20 2.40 ± 0.10 0.325 ± 0.075 0.65 BSC 0.65 BSC 0.65 BSC 7° 0.055 ± 0.045 0.04 REF 0.15 ± 0.05 1.0175 ± 0.0925 0.9625 ± 0.0375 3.025 ± 0.075 0.010 0.45 ± 0.15 2.75 ± 0.25 All dimensions in millimeters. 7357.2003.08.0.6 5 AAT7357 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. 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Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 7357.2003.08.0.6