APM2095P P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3.6A , RDS(ON)=70mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged TO-252 Package G S Top View of TO-252 Applications • D Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM 2095P P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e Tem p. R ange P ackage C ode A P M 2095P U : A P M 2095P XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±10 ID Maximum Drain Current – Continuous -3.6 IDM Maximum Pulsed Drain Current (pulse width ≤ 300µs) -20 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 1 www.anpec.com.tw APM2095P Absolute Maximum Ratings Cont. Symbol PD Rating T C=25°C 50 T C=100°C 20 * RθJC Unit W Maximum Junction Temperature T STG RθJA Parameter Maximum Power Dissipation TJ (TA = 25°C unless otherwise noted) 150 Storage Temperature Range °C -55 to 150 Thermal Resistance – Junction to Ambient 50 Thermal Resistance – Junction to Case 2.5 °C/W 2 *Mounted on 1in pad area of PCB. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2095P Typ. Max. Min. Unit Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage BVDSS IDSS VGS(th) IGSS RDS(ON) Gate Leakage Current a Drain-Source On-state Resistance a VSD Diode Forward Voltage b Dynamic VGS=0V , IDS=-250µA -20 V -1 µA -0.7 -1 V VGS=±10V , VDS=0V VGS=-4.5V , IDS=-3.6A ±100 95 nA 70 VGS=-2.5V , IDS=-2A 100 125 ISD=-1A , VGS=0V -0.7 -1.3 15 VDS=-16V , VGS=0V VDS=VGS , IDS=-250µA -0.5 Qg Total Gate Charge VDS=-10V , IDS=-3.6A 11 Qgs Gate-Source Charge VGS=-4.5V 2 Qgd Gate-Drain Charge Turn-on Delay Time 13 22 Tr Turn-on Rise Time VDD=-10V , IDS=-3.6A , 36 56 td(OFF) Turn-off Delay Time VGEN=-4.5V , RG=6Ω 45 70 37 58 1.5 Tf Turn-off Fall Time Ciss Input Capacitance VGS=0V 550 Coss Output Capacitance VDS=-15V 170 Crss Reverse Transfer Capacitance Frequency=1.0MHz a b V nC td(ON) Notes mΩ ns pF 120 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 2 www.anpec.com.tw APM2095P Typical Characteristics Output Characteristics Transfer Characteristics 20 20 16 -ID-Drain Current (A) -ID-Drain Current (A) 16 -VGS=3,4,5,6,7,8V 12 8 -2V 4 0 2 4 6 8 8 o Tj=125 C o 4 -1.5V 0 12 Tj=25 C 0 0.0 10 0.5 -VDS - Drain-to-Source Voltage (V) 2.0 2.5 3.0 3.5 On-Resistance vs. Drain Current 1.8 0.16 IDS =250µA RDS(ON)-On-Resistance (Ω) 1.6 -VGS(th)-Threshold Voltage (Normalized) 1.5 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 1.0 o Tj=-55 C 0.14 0.12 -VGS=2.5V 0.10 0.08 0.06 0.04 0.02 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 -VGS=4.5V 0 2 4 6 8 10 -ID - Drain Current (A) 3 www.anpec.com.tw APM2095P Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 1.5 0.10 0.09 0.08 0.07 0.06 0.05 0.04 -VGS = 4.5V 1.4 RDS(ON)-On-Resistance (Normalized) RDS(ON)-On-Resistance (Ω) -ID= 3.6A -IDS = 3.6A 1.3 1.2 1.1 1.0 0.9 0.8 0.7 1 2 3 4 5 6 7 8 9 O RON@Tj=25 C:70 mΩ 0.6 -50 10 -VGS - Gate-to-Source Voltage (V) -25 0 50 100 125 150 Capacitance 5 1000 Frequency=1MHz -VDS= 10 V -ID= 3.5 A 800 Capacitance (pF) 4 3 2 1 0 75 TJ - Junction Temperature (°C) Gate Charge -VGS-Gate-Source Voltage (V) 25 600 Ciss 400 Crss 200 0 2 4 6 8 10 12 14 0 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 4 8 Coss 12 16 20 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2095P Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power 20 300 -IS-Source Current (A) 10 2 Mounted on 1 in pad O TA=25 C 250 200 Power (W) o Tj=150 C o Tj=25 C 1 150 100 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1E-4 1.6 1E-3 0.01 -VSD -Source-to-Drain Voltage (V) 0.1 1 10 100300 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 PDM D=0.05 D=0.02 D=0.01 0.01 t 1 t 2 SINGLE PULSE 1.Duty Cycle, D= t1/t2 o 2.Per Unit Base=RthJA=50 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 300 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 5 www.anpec.com.tw APM2095P Packaging Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 0. 0 20 6 www.anpec.com.tw APM2095P Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature Convection or IR/ Convection VPR 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 10 °C /second max. 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. 215~ 219°C or 235 +5/-0°C 10 °C /second max. 60 seconds Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2095P Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 F D 7.5 ± 0.1 1.5 +0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 2 ± 0.5 T1 16.4 + 0.3 -0.2 D1 Po 1.5± 0.25 4.0 ± 0.1 8 T2 P E 2.5± 0.5 W 16+ 0.3 - 0.1 8 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 www.anpec.com.tw APM2095P Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 9 www.anpec.com.tw