ANPEC APM2095P

APM2095P
P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-20V/-3.6A , RDS(ON)=70mΩ(typ.) @ VGS=-4.5V
RDS(ON)=100mΩ(typ.) @ VGS=-2.5V
•
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
Reliable and Rugged
TO-252 Package
G
S
Top View of TO-252
Applications
•
D
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
APM 2095P
P ackage C ode
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
A P M 2095P U :
A P M 2095P
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±10
ID
Maximum Drain Current – Continuous
-3.6
IDM
Maximum Pulsed Drain Current (pulse width ≤ 300µs)
-20
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
1
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APM2095P
Absolute Maximum Ratings Cont.
Symbol
PD
Rating
T C=25°C
50
T C=100°C
20
*
RθJC
Unit
W
Maximum Junction Temperature
T STG
RθJA
Parameter
Maximum Power Dissipation
TJ
(TA = 25°C unless otherwise noted)
150
Storage Temperature Range
°C
-55 to 150
Thermal Resistance – Junction to Ambient
50
Thermal Resistance – Junction to Case
2.5
°C/W
2
*Mounted on 1in pad area of PCB.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM2095P
Typ.
Max.
Min.
Unit
Static
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)
Gate Leakage Current
a
Drain-Source On-state
Resistance
a
VSD
Diode Forward Voltage
b
Dynamic
VGS=0V , IDS=-250µA
-20
V
-1
µA
-0.7
-1
V
VGS=±10V , VDS=0V
VGS=-4.5V , IDS=-3.6A
±100
95
nA
70
VGS=-2.5V , IDS=-2A
100
125
ISD=-1A , VGS=0V
-0.7
-1.3
15
VDS=-16V , VGS=0V
VDS=VGS , IDS=-250µA
-0.5
Qg
Total Gate Charge
VDS=-10V , IDS=-3.6A
11
Qgs
Gate-Source Charge
VGS=-4.5V
2
Qgd
Gate-Drain Charge
Turn-on Delay Time
13
22
Tr
Turn-on Rise Time
VDD=-10V , IDS=-3.6A ,
36
56
td(OFF)
Turn-off Delay Time
VGEN=-4.5V , RG=6Ω
45
70
37
58
1.5
Tf
Turn-off Fall Time
Ciss
Input Capacitance
VGS=0V
550
Coss
Output Capacitance
VDS=-15V
170
Crss
Reverse Transfer Capacitance Frequency=1.0MHz
a
b
V
nC
td(ON)
Notes
mΩ
ns
pF
120
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
2
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APM2095P
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
20
16
-ID-Drain Current (A)
-ID-Drain Current (A)
16
-VGS=3,4,5,6,7,8V
12
8
-2V
4
0
2
4
6
8
8
o
Tj=125 C
o
4
-1.5V
0
12
Tj=25 C
0
0.0
10
0.5
-VDS - Drain-to-Source Voltage (V)
2.0
2.5
3.0
3.5
On-Resistance vs. Drain Current
1.8
0.16
IDS =250µA
RDS(ON)-On-Resistance (Ω)
1.6
-VGS(th)-Threshold Voltage
(Normalized)
1.5
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
1.0
o
Tj=-55 C
0.14
0.12
-VGS=2.5V
0.10
0.08
0.06
0.04
0.02
-25
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
-VGS=4.5V
0
2
4
6
8
10
-ID - Drain Current (A)
3
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APM2095P
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
1.5
0.10
0.09
0.08
0.07
0.06
0.05
0.04
-VGS = 4.5V
1.4
RDS(ON)-On-Resistance
(Normalized)
RDS(ON)-On-Resistance (Ω)
-ID= 3.6A
-IDS = 3.6A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1
2
3
4
5
6
7
8
9
O
[email protected]=25 C:70 mΩ
0.6
-50
10
-VGS - Gate-to-Source Voltage (V)
-25
0
50
100 125 150
Capacitance
5
1000
Frequency=1MHz
-VDS= 10 V
-ID= 3.5 A
800
Capacitance (pF)
4
3
2
1
0
75
TJ - Junction Temperature (°C)
Gate Charge
-VGS-Gate-Source Voltage (V)
25
600
Ciss
400
Crss
200
0
2
4
6
8
10
12
14
0
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
4
8
Coss
12
16
20
-VDS - Drain-to-Source Voltage (V)
4
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APM2095P
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
20
300
-IS-Source Current (A)
10
2
Mounted on 1 in pad
O
TA=25 C
250
200
Power (W)
o
Tj=150 C
o
Tj=25 C
1
150
100
50
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1E-4
1.6
1E-3
0.01
-VSD -Source-to-Drain Voltage (V)
0.1
1
10
100300
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
2
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
PDM
D=0.05
D=0.02
D=0.01
0.01
t
1
t
2
SINGLE PULSE
1.Duty Cycle, D= t1/t2
o
2.Per Unit Base=RthJA=50 C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
1E-3
1E-4
1E-3
0.01
0.1
1
10
100
300
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
5
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APM2095P
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
b
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
C
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
D
5. 3 34
6. 2 2
0. 2 10
0. 2 45
E
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
H
9. 3 98
10 . 41
0. 3 70
0. 4 10
L
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
0. 0 20
6
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APM2095P
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Average ramp-up rate(183°C to Peak)
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak
temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
Convection or IR/ Convection
VPR
3°C/second max.
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
10 °C /second max.
220 +5/-0°C or 235 +5/-0°C
6 °C /second max.
6 minutes max.
215~ 219°C or 235 +5/-0°C
10 °C /second max.
60 seconds
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bags
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM2095P
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
F
D
7.5 ± 0.1
1.5 +0.1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
2 ± 0.5
T1
16.4 + 0.3
-0.2
D1
Po
1.5± 0.25
4.0 ± 0.1
8
T2
P
E
2.5± 0.5
W
16+ 0.3
- 0.1
8 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
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APM2095P
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2003
9
www.anpec.com.tw