ANPEC APM2506NU

APM2506NU
N-Channel Enhancement Mode MOSFET
Pin Description
Features
z
25V/60A,
Pin 3
D
RDS(ON)= 5mΩ (typ.) @ VGS= 10V
RDS(ON)= 7mΩ (typ.) @ VGS= 4.5V
z
Super High Dense Cell Design
z
Avalanche Rated
z
Reliable and Rugged
3
Pin 1
G
1
2
S
Pin 2
Applications
z
Power Management in Desktop Computer or
DC/DC Converters
Ordering and Marking Information
APM2506N
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device
Blank : Original Device
Lead Free Code
Handing Code
Temp. Range
Package Code
APM2506N U:
XXXXX – Date Code
APM2506N
XXXXX
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
1
www.anpec.com.tw
APM2506NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA = 25°C)
VDSS
Drain-Source Voltage
±25
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TJ
TSTG
Storage Temperature Range
V
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
TC=25°C
150
TC=100°C
80
TC=25°C
60*
TC=100°C
40
TC=25°C
50
TC=100°C
20
2.5
Thermal Resistance-Junction to Case
A
A
W
°C/W
Mounted on PCB of 1in2 pad area
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
TA=25°C
150
TA=100°C
80
TA=25°C
17
TA=100°C
10
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
A
W
°C/W
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
TA=25°C
150
TA=100°C
80
TA=25°C
13
TA=100°C
7
TA=25°C
1.5
°C/W
TA=100°C
0.5
°C/W
75
°C/W
A
A
Notes:
* Current limited by bond wire
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
2
www.anpec.com.tw
APM2506NU
Electrical Characteristics
Symbol
(TA=25°C)
Parameter
Test Condition
Drain-Source Avalanche Ratings
EAS
Drain-Source Avalanche Energy
ID=45A, VDD=15V
Static
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
IDSS
VGS(th)
IGSS
IS
Typ.
Max.
100
25
1
Unit
mJ
V
1.5
1
µA
2
V
±100
nA
5
6
VGS=4.5V, IDS=20A
7
10
Diode Forward Voltage
ISD=20A , VGS=0V
0.7
1.3
V
Diode continuous forward current
TA=25°C
40
A
Dynamicb
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
Min.
VGS=10V, IDS=40A
RDS(ON) a Drain-Source On-state Resistance
Diode
VSDa
APM2506NU
VGS=0V
VDS=15V
Frequency=1.0MHz
VDD=15V, RL=15Ω
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
mΩ
3000
pF
670
pF
360
pF
13
20
ns
9
15
ns
43
66
ns
14
28
ns
32
42
nC
b
Gate Charge
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=20A
6.6
nC
12.4
nC
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%
b : Guaranteed by design, not subject to production testing
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
3
www.anpec.com.tw
APM2506NU
Typical Characteristics
Power Dissipation
Drain Current
60
70
60
ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
10
0
50
40
30
20
10
0
20
40
60
0
80 100 120 140 160 180
0
20
40
60
80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
300
Normalized Effective Transient
1
ID - Drain Current (A)
100
100µs
300µs
10
1ms
10ms
DC
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
Mounted on 1in pad
o
RθJA :50 C/W
O
TC=25 C
0.1
0.1
1
10
1E-3
1E-4
70
VDS - Drain-Source Voltage (V)
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
www.anpec.com.tw
APM2506NU
Typical Characteristics
Drain-Source On Resistance
Output Characteristics
12
100
RDS(ON) - On Resistance (mΩ)
VGS=3.5,4,5,6,7,8,9,10V
ID - Drain Current (A)
80
60
3V
40
2.5V
20
10
8
VGS=4.5V
6
VGS=10V
4
2
2V
0
0
0
2
4
6
8
10
40
60
80
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
Normalized Threshold Voltage
1.6
80
ID - Drain Current (A)
20
VDS - Drain-Source Voltage (V)
100
60
o
Tj=125 C
40
o
Tj=-55 C
o
Tj=25 C
20
0
0
0
1
2
3
4
VGS - Gate-Source Voltage (V)
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
IDS =250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
5
100
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
www.anpec.com.tw
APM2506NU
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
100
2.00
VGS = 10V
IDS = 40A
IS - Source Current (A)
Normalized On Resistance
1.75
1.50
1.25
1.00
0.75
0.50
o
Tj=150 C
10
o
Tj=25 C
1
0.25
o
[email protected]=25 C: 5mΩ
0.00
-50 -25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.8
1.0
1.2
1.4
1.6
VSD - Source-Drain Voltage (V)
Tj - Junction Temperature (°C)
Capacitance
Gate Charge
10
6000
Frequency=1MHz
VDS=10 V
VGS - Gate-Source Voltage (V)
9
5000
C - Capacitance (nC)
0.6
4000
Ciss
3000
2000
1000
Coss
ID = 30 A
8
7
6
5
4
3
2
1
Crss
0
0
5
10
0
15
20
25
VDS - Drain-Source Voltage (V)
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
0
10
20
30
40
50
60
70
QG - Gate Charge (nC)
6
www.anpec.com.tw
APM2506NU
Avalanche Test Circuit and Waveforms
VDS
L
tp
VDSX(SUS)
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
RG
VGS
VDD
10%
VGS
tp
td(on) tr
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
7
td(off) tf
www.anpec.com.tw
APM2506NU
Package information
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Millimeters
Inches
Min.
Max.
Min.
Max.
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
E
6.35
6.73
0.250
0.265
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
8
0.020
www.anpec.com.tw
APM2506NU
Physical Specifications
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
temperature
(IR/Convection or VPR Reflow)
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate (183°C to Peak)
3°C/ second max.
Preheat temperature (125 ± 25°C)
120 seconds max.
Temperature maintained above 183°C
60~150 seconds
Time within 5°C of actual peak temperature
10~20 seconds
60 seconds
Peak temperature range
220 + 5/-0°C or 235 +5°C/-0°C
215~ 219 °C or 235 +5°C/-0°C
Ramp-down rate
6°C /second max.
10°C /second max.
Time 25°C to peak temperature
6 minutes max.
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
9
10°C /second max.
www.anpec.com.tw
APM2506NU
Reliability test program
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245°C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @125°C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121°C
TST
MIL-STD 883D-1011.9
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimension
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
T2
W
P
E
330±3
100±2
13±0.5
2±0.5
16.4+0.3
-0.2
2.5±0.5
16+0.3
16-0.1
8±0.1
1.75±0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5±0.1
1.5±0.1
1.5±0.25
4.0±0.1
2.0±0.1
6.8±0.1
10.4±0.1
2.5±0.1
0.3±0.05
(mm)
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
10
www.anpec.com.tw
APM2506NU
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO-252
16
13.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright©ANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
11
www.anpec.com.tw