APM2506NU N-Channel Enhancement Mode MOSFET Pin Description Features z 25V/60A, Pin 3 D RDS(ON)= 5mΩ (typ.) @ VGS= 10V RDS(ON)= 7mΩ (typ.) @ VGS= 4.5V z Super High Dense Cell Design z Avalanche Rated z Reliable and Rugged 3 Pin 1 G 1 2 S Pin 2 Applications z Power Management in Desktop Computer or DC/DC Converters Ordering and Marking Information APM2506N Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device Lead Free Code Handing Code Temp. Range Package Code APM2506N U: XXXXX – Date Code APM2506N XXXXX ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 1 www.anpec.com.tw APM2506NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA = 25°C) VDSS Drain-Source Voltage ±25 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TJ TSTG Storage Temperature Range V Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC TC=25°C 150 TC=100°C 80 TC=25°C 60* TC=100°C 40 TC=25°C 50 TC=100°C 20 2.5 Thermal Resistance-Junction to Case A A W °C/W Mounted on PCB of 1in2 pad area IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA TA=25°C 150 TA=100°C 80 TA=25°C 17 TA=100°C 10 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Ambient 50 A A W °C/W Mounted on PCB of Minimum Footprint IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance-Junction to Ambient TA=25°C 150 TA=100°C 80 TA=25°C 13 TA=100°C 7 TA=25°C 1.5 °C/W TA=100°C 0.5 °C/W 75 °C/W A A Notes： * Current limited by bond wire Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 2 www.anpec.com.tw APM2506NU Electrical Characteristics Symbol (TA=25°C) Parameter Test Condition Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy ID=45A, VDD=15V Static BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VDS=20V, VGS=0V Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V IDSS VGS(th) IGSS IS Typ. Max. 100 25 1 Unit mJ V 1.5 1 µA 2 V ±100 nA 5 6 VGS=4.5V, IDS=20A 7 10 Diode Forward Voltage ISD=20A , VGS=0V 0.7 1.3 V Diode continuous forward current TA=25°C 40 A Dynamicb Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Min. VGS=10V, IDS=40A RDS(ON) a Drain-Source On-state Resistance Diode VSDa APM2506NU VGS=0V VDS=15V Frequency=1.0MHz VDD=15V, RL=15Ω IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time mΩ 3000 pF 670 pF 360 pF 13 20 ns 9 15 ns 43 66 ns 14 28 ns 32 42 nC b Gate Charge Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V, VGS=4.5V, IDS=20A 6.6 nC 12.4 nC Notes： a : Pulse test ; pulse width≤300µs, duty cycle≤2% b : Guaranteed by design, not subject to production testing Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 3 www.anpec.com.tw APM2506NU Typical Characteristics Power Dissipation Drain Current 60 70 60 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 10 0 50 40 30 20 10 0 20 40 60 0 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 300 Normalized Effective Transient 1 ID - Drain Current (A) 100 100µs 300µs 10 1ms 10ms DC 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 Mounted on 1in pad o RθJA :50 C/W O TC=25 C 0.1 0.1 1 10 1E-3 1E-4 70 VDS - Drain-Source Voltage (V) Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2506NU Typical Characteristics Drain-Source On Resistance Output Characteristics 12 100 RDS(ON) - On Resistance (mΩ) VGS=3.5,4,5,6,7,8,9,10V ID - Drain Current (A) 80 60 3V 40 2.5V 20 10 8 VGS=4.5V 6 VGS=10V 4 2 2V 0 0 0 2 4 6 8 10 40 60 80 ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage Normalized Threshold Voltage 1.6 80 ID - Drain Current (A) 20 VDS - Drain-Source Voltage (V) 100 60 o Tj=125 C 40 o Tj=-55 C o Tj=25 C 20 0 0 0 1 2 3 4 VGS - Gate-Source Voltage (V) Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 5 100 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2506NU Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward 100 2.00 VGS = 10V IDS = 40A IS - Source Current (A) Normalized On Resistance 1.75 1.50 1.25 1.00 0.75 0.50 o Tj=150 C 10 o Tj=25 C 1 0.25 o RON@Tj=25 C: 5mΩ 0.00 -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.8 1.0 1.2 1.4 1.6 VSD - Source-Drain Voltage (V) Tj - Junction Temperature (°C) Capacitance Gate Charge 10 6000 Frequency=1MHz VDS=10 V VGS - Gate-Source Voltage (V) 9 5000 C - Capacitance (nC) 0.6 4000 Ciss 3000 2000 1000 Coss ID = 30 A 8 7 6 5 4 3 2 1 Crss 0 0 5 10 0 15 20 25 VDS - Drain-Source Voltage (V) Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 0 10 20 30 40 50 60 70 QG - Gate Charge (nC) 6 www.anpec.com.tw APM2506NU Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Switching Time Test Circuit and Waveforms VDS RD VDS 90% DUT RG VGS VDD 10% VGS tp td(on) tr Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 7 td(off) tf www.anpec.com.tw APM2506NU Package information E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Millimeters Inches Min. Max. Min. Max. 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 E 6.35 6.73 0.250 0.265 e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 8 0.020 www.anpec.com.tw APM2506NU Physical Specifications Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition temperature (IR/Convection or VPR Reflow) Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate (183°C to Peak) 3°C/ second max. Preheat temperature (125 ± 25°C) 120 seconds max. Temperature maintained above 183°C 60~150 seconds Time within 5°C of actual peak temperature 10~20 seconds 60 seconds Peak temperature range 220 + 5/-0°C or 235 +5°C/-0°C 215~ 219 °C or 235 +5°C/-0°C Ramp-down rate 6°C /second max. 10°C /second max. Time 25°C to peak temperature 6 minutes max. Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 9 10°C /second max. www.anpec.com.tw APM2506NU Reliability test program Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimension t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TO-252 A B C J T1 T2 W P E 330±3 100±2 13±0.5 2±0.5 16.4+0.3 -0.2 2.5±0.5 16+0.3 16-0.1 8±0.1 1.75±0.1 F D D1 Po P1 Ao Bo Ko t 7.5±0.1 1.5±0.1 1.5±0.25 4.0±0.1 2.0±0.1 6.8±0.1 10.4±0.1 2.5±0.1 0.3±0.05 (mm) Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 10 www.anpec.com.tw APM2506NU Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel TO-252 16 13.3 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 11 www.anpec.com.tw