ANPEC APM3055L

APM3055L
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/12A, RDS(ON)=100mΩ(max) @ VGS=10V
RDS(ON)=200mΩ(max) @ VGS=4.5V
•
•
•
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252 and SOT-223 Packages
1
G
Applications
•
•
2
D
1
2
3
G
D
S
3
S
Top View of TO-252
Top View of SOT-223
Switching Regulators
Switching Converters
Ordering and Marking Information
A P M 3 055 L
Package C ode
U : T O -2 5 2
V : S O T -2 2 3
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TR : Tape & R eel
H a n d lin g C o d e
Tem p. R ange
Package C ode
A P M 3 0 5 5 L U /V :
AP M 3055L
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID
Maximum Drain Current – Continuous
15
IDM
Maximum Drain Current – Pulsed
30
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
1
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APM3055L
Absolute Maximum Ratings
Symbol
PD
(TA = 25°C unless otherwise noted)
Parameter
Rating
Maximum Power Dissipation
TA=25°C
TA=100°C
TJ
TSTG
Static
BVDSS
50
SOT-223
3
TO-252
20
SOT-223
1.2
Storage Temperature Range
W
150
°C
-55 to 150
°C
Maximum Junction Temperature
Electrical Characteristics
Symbol
TO-252
Unit
(TA = 25°C unless otherwise noted)
Parameter
Test Condition
APM3055L
Min.
Typ.
Max.
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
VDS =VGS, ID=250µA
IGSS
Gate Leakage Current
VGS =±20V, VDS =0V
RDS(ON)
Drain-Source On-state
VGS =10V, ID=12A
75
100
Resistance
VGS =4.5V, ID =6A
100
200
Diode Forward Voltage
IS=6A, VGS =0V
Qg
Total Gate Charge
VDS =15V, VGS=10V,
8.5
Q gs
Gate-Source Charge
ID=2A
1.1
Q gd
Gate-Drain Charge
tON
Turn-on Time
VDD=15V, ID=2A,
td(ON)
Turn-on Delay Time
VGS =10V, RG=6Ω
tr
Turn-on Rise Time
17
td(OFF)
Turn-off Delay Time
37
Turn-off Fall Time
20
IDSS
VGS(th)
VSD
VGS =0V, ID=250µA
30
Unit
V
VDS =24V, VGS=0V
1
0.6
1
µA
3
V
±100
nA
1.3
mΩ
V
Dynamic
tf
tOFF
nC
1.8
Turn-off Time
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
12
40
11
ns
60
2
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APM3055L
Typical Characteristics
Output Characteristics
Transfer Characteristics
25
25
VGS = 10, 9, 8, 7, 6V
o
-55 C
20
ID- Drina current (A)
IDS- Drain Current(A)
VGS = 5V
20
15
15
VGS = 4V
10
o
+125 C
10
VGS = 3V
5
0
o
+25 C
0
1
2
3
5
0
4
0
1
VDS- Drain-to-Source Voltage (V)
2
3
4
5
6
VGS- Gate-to-Source Voltage (V)
Normalized V GS(th) v.s. TJ
Threshold Voltage v.s.TJ
1.2
1.6
1.1
IDS =250µ A
VGS(th)- Normalized
VGS(th) (V)
1.5
1.4
1.3
1.2
1.1
IDS =250 µ A
1.0
0.9
0.8
0.7
1.0
-50
-25
0
25
50
75
100
125
150
-50
-25
o
On-Resistance v.s. Gate to Source Voltage
50
75
100
125
150
On-Resistance v.s. Junction Temperature
1.5
160
RDS(ON)- On-Resistance (Ω )
(Normalized)
RDS(ON)- On-Resistance (m Ω )
25
Tj - Junction Temperature( C)
170
150
140
130
ID=10A
120
110
100
90
80
70
0
o
Tj - Junction Temperature( C)
1.4
1.3
VGS =10V
IDS =12A
1.2
1.1
1.0
0.9
0.8
3
4
5
6
7
8
9
-50
VGS- Gate Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
-25
0
25
50
75
100
125
150
o
TJ-Junction Temperature( C)
3
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APM3055L
Typical Characteristics (Cont.)
Gate Charge
Capacitance
500
VGS - Gate to Source Voltage (V)
10
Capacitance (pF)
8
VDS=15V
IDS = 2A
6
4
400
300
Ciss
200
Coss
100
2
Crss
0
0
0
1
2
3
4
5
6
7
8
9
0
10
5
QG-Gate Charge(nC)
10
15
20
25
30
VDS- Drain-to-Source Voltage(V)
Source-Drain Diode Forward Voltage
Single Pulse Power Capability
50
40
o
TJ=150 C
Peak Power (W)
IS- Source Current(A)
10
o
TJ=25 C
1
30
20
10
0.1
0.4
0.8
1.2
1.6
2.0
0
1E-5
2.4
1E-4
1E-3
0.01
VSD- Source to Drain Voltage
0.1
1
10
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction to Ambient
1
Duty Cycle=0.5
2DM
D=0.2
J
J
D=0.1
0.1
D=0.05
D=0.02
t1/t2
1.1.Duty
Duty Cycle,
Cycle D=
, D=t1/t2
o
2.2.Per
Per Unit Base=R
Base=RthJA
=50°C/W
=50
C/W
thJA
3.3.T
TJM
=P
Z
-T
=P
Z
A
DM thJA
thJA
JM
A
DM
4. Surface Mounted
D=0.01
0.01
1E-5
SINGLE PULSE
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration(sec)
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
4
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APM3055L
Package Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
b
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
C
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
D
5. 3 34
6. 2 2
0. 2 10
0. 2 45
E
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
H
9. 3 98
10 . 41
0. 3 70
0. 4 10
L
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
0. 0 20
5
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APM3055L
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
D
A
B1
a
c
H
E
L
K
e
A1
e1
b
B
Dim
A
A1
B
B1
c
D
E
e
e1
H
L
K
α
β
Millimeters
Min.
1.50
0.02
0.60
2.90
0.28
6.30
3.30
Inches
Max.
1.80
0.08
0.80
3.10
0.32
6.70
3.70
Min.
0.06
Max.
0.07
0.02
0.11
0.01
0.25
0.13
0.03
0.12
0.01
0.26
0.15
2.3 BSC
4.6 BSC
6.70
0.91
1.50
0°
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
0.09 BSC
0.18 BSC
7.30
1.10
2.00
10°
0.26
0.04
0.06
0°
13°
0.29
0.04
0.08
10°
13°
6
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APM3055L
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM3055L
R e lia b ilit y te s t p r o g r a m
Te s t ite m
S O L D E R A B IL IT Y
H O LT
PCT
TST
ESD
L a tc h -U p
M e th o d
M IL -S T D -8 8 3 D -2 0 0 3
M IL -S T D -8 8 3 D -1 0 0 5 .7
J E S D -2 2 - B , A 1 0 2
M IL -S T D -8 8 3 D -1 0 11 .9
M IL -S T D -8 8 3 D -3 0 1 5 .7
JESD 78
D e s c rip tio n
2 45 °C , 5 S E C
1 0 0 0 H rs B ia s @ 1 2 5 ° C
1 6 8 H rs , 1 0 0 % R H , 1 2 1 ° C
-6 5 °C ~ 1 5 0 °C , 2 0 0 C y c le s
V H B M > 2 K V, V M M > 2 0 0 V
1 0 m s , I tr > 1 0 0 m A
Carrier Tape
t
D
P
Po
E
P1
Bo
F
W
Ko
Ao
D1
T2
J
C
A
B
T1
Application
TO-252
Application
SOT-223
A
B
C
J
2 ± 0.5
T1
16.4 + 0.3
-0.2
330 ±3
100 ± 2
13 ± 0. 5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
1.5± 0.25
A
B
330±1
62±1.5
C
12.75±
0.15
F
D
D1
5.5 ± 0.05
1.5+ 0.1
1.5+ 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
T2
P
E
2.5± 0.5
W
16+ 0.3
- 0.1
8 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
4.0 ± 0.1
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
J
T1
T2
W
P
E
2 ± 0.6
12.4 +0.2
2± 0.2
12 ± 0.3
8 ± 0.1
1.75± 0.1
Po
P1
Ao
Bo
Ko
t
7.5± 0.1
2.1± 0.1
0.3±0.05
4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1
8
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APM3055L
Cover Tape Dimensions
Application
SOT- 223
TO- 252
Carrier Width
12
16
Cover Tape Width
9.3
13.3
Devices Per Reel
2500
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
9
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