APM4408 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/21A, RDS(ON) = 3.5mΩ(typ.) @ VGS = 10V RDS(ON) = 5mΩ(typ.) @ VGS = 4.5V RDS(ON) = 8mΩ(typ.) @ VGS = 2.5V • • • S 1 8 D S 2 7 D S 3 6 D G 4 5 D High Density Cell Design Reliable and Rugged SO-8 Package SO − 8 D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G S Ordering and Marking Information APM 4408 P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e Tem p. R ange P ackage C ode APM 4408 K : APM 4408 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol N-Channel MOSFET (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 ID* Maximum Drain Current – Continuous 21 IDM Maximum Drain Current – Pulsed 60 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 1 www.anpec.com.tw APM4408 Absolute Maximum Ratings Cont. Symbol PD TJ Parameter Maximum Power Dissipation Rating TA=25°C 1.6 TA=100°C 0.625 Storage Temperature Range RθJA Thermal Resistance – Junction to Ambient Electrical Characteristics Parameter Unit W 150 °C -55 to 150 °C 80 °C/W Maximum Junction Temperature TSTG Symbol (TA = 25°C unless otherwise noted) (TA = 25°C unless otherwise noted) Test Condition APM4408 Min. Typ. Max. Unit Static BV DSS Drain-Source Breakdown Voltage V GS =0V , IDS=250µA IDSS Zero Gate Voltage Drain Current V DS =18V , V GS =0V V GS(th) IGSS Gate Threshold Voltage Gate Leakage Current V DS =V GS , IDS=250µA V GS =±16V , V DS =0V R DS(ON) V SD a a Drain-Source On-state Resistance Diode Forward Voltage Dynamic b Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 20 V 0.8 1 µA 1.5 V nA ±100 V GS =10V , I DS =21A 3.5 4.5 V GS =4.5V , IDS =17A 5 6 V GS =2.5V , IDS =10A 8 10 ISD=2.9A , V GS =0V V DS =10V , IDS = 21A V GS =4.5V , 0.6 1.3 45 20 V DS =15V 17 35 19 110 60 5300 1000 Frequency=1.0MHz 300 V DD=10V , IDS =1A , V GEN =4.5V , R G =6Ω V GS =0V mΩ V 65 nC 50 28 170 75 ns pF Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 2 www.anpec.com.tw APM4408 Typical Characteristics Output Characteristics Transfer Characteristics 50 50 40 40 IDS-Drain Current (A) IDS-Drain Current (A) VGS=4,5,6,7,8,9,10V 30 20 V GS=3V 20 TJ=25°C TJ=-55°C TJ=125°C 10 10 0 30 0 0 1 2 3 4 5 0 VDS-Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.008 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250µA 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.007 0.006 VGS=4.5V 0.005 0.004 VGS=10V 0.003 0.002 0.001 -25 0 25 50 75 0.000 0 100 125 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 10 20 30 40 50 IDS-Drain Current (A) 3 www.anpec.com.tw APM4408 On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature 0.020 2.00 IDS=21A 0.018 RDS(ON)-On-Resistance (Ω) (Normalized) RDS (ON)-On-Resistance (Ω) Typical Characteristics Cont. 0.016 0.014 0.012 0.010 0.008 0.006 0.004 VGS=10V IDS=21A 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.002 0.000 0 1 2 3 4 5 6 7 8 9 0.00 -50 10 Gate Voltage (V) 0 50 75 100 125 150 Capacitance Characteristics 10 8000 Frequency=1MHz VDS=10V IDS=21A 7000 C-Capacitance (pF) 8 6 4 6000 Ciss 5000 4000 3000 2000 2 Coss 1000 0 25 Tj-Junction Temperature (°C) Gate Charge VGS-Gate-to-Source Voltage (V) -25 0 10 20 30 40 50 60 70 80 0 90 0 5 10 15 20 VDS-Drain-to-Source Voltage (V) QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 Crss 4 www.anpec.com.tw APM4408 Typical Characteristics Cont. Single Pulse Power 50 100 10 80 Power (W) ISD-Source Current (A) Source-Drain Diode Forward Voltage TJ=25°C TJ=150°C 60 40 20 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.01 1.6 0.1 VSD-Source to Drain Voltage 1 10 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 5 www.anpec.com.tw APM4408 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM4408 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR temperature Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4408 R e lia b ilit y te s t p r o g r a m Te s t ite m S O L D E R A B IL IT Y H O LT PCT TST ESD L a tc h -U p M e th o d M IL -S T D -8 8 3 D -2 0 0 3 M IL -S T D -8 8 3 D -1 0 0 5 .7 J E S D -2 2 - B , A 1 0 2 M IL -S T D -8 8 3 D -1 0 11 .9 M IL -S T D -8 8 3 D -3 0 1 5 .7 JESD 78 D e s c rip tio n 2 45 °C , 5 S E C 1 0 0 0 H rs B ia s @ 1 2 5 ° C 1 6 8 H rs , 1 0 0 % R H , 1 2 1 ° C -6 5 °C ~ 1 5 0 °C , 2 0 0 C y c le s V H B M > 2 K V, V M M > 2 0 0 V 1 0 m s , I tr > 1 0 0 m A Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 8 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM4408 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 9 www.anpec.com.tw