ANPEC APM9926C

APM9926/C
N-Channel Enhancement Mode MOSFET
Features
Applications
•
•
20V/6A , RDS(ON)=28mΩ(typ.) @ VGS=4.5V
RDS(ON)=38mΩ(typ.) @ VGS=2.5V
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
Reliable and Rugged
SO-8 and TSSOP-8 Packages
Pin Description
APM9926C
APM9926
S1
1
8
D1
D1
1
8
D2
S1
1
8
D
D
1
8
D
G1
2
7
D1
S1
2
7
S2
G1
2
7
D
S1
2
7
S2
S2
3
6
D2
S1
3
6
S2
S2
3
6
D
S1
3
6
S2
G2
4
5
D2
G1
4
5
G2
G2
4
5
D
G1
4
5
G2
SO-8
TSSOP-8
D1 D1
SO-8
D
D1
G1
G1
S1
S1
S1
S1
D
D2
D2 D2
D
G1
G1
S1
TSSOP-8
G2
S1
D
G2
G2
G2
S2
S2
S2
S2
S2
S2
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
1
www.anpec.com.tw
APM9926/C
Ordering and Marking Information
APM9926/C
Package Code
K : SO-8
O : TSSOP-8
Operation Junction Temp. Range
C : -55 to 150° C
Handling Code
TR : Tape & Reel
Handling Code
Temp. Range
Package Code
APM9926/C K/O :
APM9926/C
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±10
ID *
Maximum Drain Current – Continuous
6
IDM
Maximum Drain Current – Pulsed
20
TA=25°C
PD
Maximum Power Dissipation
1.6
TSSOP-8
1.0
SO-8
TA=100°C
TJ
SO-8
Maximum Junction Temperature
TSTG
Storage Temperature Range
RθjA
Thermal Resistance – Junction to Ambient
TSSOP-8
0.625
Unit
V
A
W
0.4
150
°C
-55 to 150
°C
80
°C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
2
www.anpec.com.tw
APM9926/C
Electrical Characteristics Cont.
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM9926/C
Min.
Typ.
Max.
Unit
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=250µA
IDSS
Zero Gate Voltage Drain
Current
VDS=16V , VGS=0V
VGS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
RDS(ON)a
VSDa
Drain-Source On-state
VDS=VGS , IDS=250µA
VGS=±8V , VDS=0V
VGS=4.5V , IDS=6A
Resistance
VGS=2.5V , IDS=5.2A
Diode Forward Voltage
ISD=1.7A , VGS=0V
20
0.5
V
0.7
1
µA
1.5
V
±100
nA
28
32
38
45
0.6
1.3
mΩ
V
b
Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
Turn-off Delay Time
td(OFF)
VDS=10V , IDS= 6A
VGS=4.5V ,
VDD=10V , IDS=1A ,
VGEN=4.5V , RG=0.2Ω
Turn-off Fall Time
Input Capacitance
Coss
Crss
Output Capacitance
VDS=15V
Reverse Transfer Capacitance Frequency=1.0MHz
a
b
nC
2
17
Tf
Ciss
Notes
10
3.6
VGS=0V
15
45
25
520
110
ns
pF
70
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
3
www.anpec.com.tw
APM9926/C
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
20
VGS=2,3,4,5,6,7,8,9,10V
1V
ID-Drain Current (A)
ID-Drain Current (A)
16
12
0.5V
8
4
0
15
10
TJ=25°C
5
TJ=-55°C
TJ=125°C
0
1
2
3
4
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
0.040
1.50
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)
(Normalized)
IDS=250uA
1.25
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
VGS=4.5V
0.030
VGS=10V
0.025
0.020
0.015
0.010
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
0.035
0
5
10
15
20
ID - Drain Current (A)
4
www.anpec.com.tw
APM9926/C
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.12
2.00
ID=6A
RDS(ON)-On-Resistance (Ω)
(Normalized)
0.11
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Junction Temperature
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1.50
1.25
1.00
0.75
0.50
0.25
0.01
0.00
VGS=10V
1.75 ID=6A
0
1
2
3
4
5
6
7
8
9
0.00
-50
10
VGS - Gate-to-Source Voltage (V)
-25
0
50
100 125 150
Capacitance
750
10
Frequency=1MHz
V DS =10V
ID=6A
625
Capacitance (pF)
8
6
4
Ciss
500
375
250
Coss
2
0
75
TJ - Junction Temperature (°C)
Gate Charge
VGS-Gate-Source Voltage (V)
25
125
0
2
4
6
8
10
12
14
16
0
18
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
Crss
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
5
www.anpec.com.tw
APM9926/C
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
80
10
60
Power (W)
IS-Source Current (A)
20
TJ=150°C
40
TJ=25°C
20
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
0.01
0.1
VSD -Source-to-Drain Voltage (V)
1
10
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=80°C/W
3.TJM-TA=PDMZthJA
D=0.02
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
6
www.anpec.com.tw
APM9926/C
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min .
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
1. 27B S C
0. 50B S C
8°
8°
7
www.anpec.com.tw
APM9926/C
Packaging Information
TSSOP-8
e
8 7
2x E/2
E1
( 2)
E
GAUGE
PLANE
S
1 2
e/2
0.25
D
L
A2
A
b
Dim
A
A1
A2
b
D
e
E
E1
L
L1
R
R1
S
φ1
φ2
φ3
1
(L1)
( 3)
A1
Millimeters
Min.
Inches
Max.
1.2
0.15
1.05
0.30
3.1
0.00
0.80
0.19
2.9
Min.
0.000
0.031
0.007
0.114
0.65 BSC
6.40 BSC
4.30
0.45
0.026 BSC
0.252 BSC
4.50
0.75
0.169
0.018
8°
0.004
0.004
0.008
0°
1.0 REF
0.09
0.09
0.2
0°
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
Max.
0.047
0.006
0.041
0.012
0.122
0.177
0.030
0.039REF
12° REF
12° REF
8°
12° REF
12° REF
8
www.anpec.com.tw
APM9926/C
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
temperature
Reflow Condition
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
9
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
www.anpec.com.tw
APM9926/C
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
D
P
Po
E
t
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
A p p lic a tio n
SOP- 8
A
B
T1
T2
W
P
E
6 2 + 1 .5
C
1 2 .7 5 +
0 .1 5
J
330 ± 1
2 ± 0 .5
1 2 .4 ± 0 .2
2 ± 0 .2
12± 0. 3
8 ± 0 .1
1 .7 5 ± 0 .1
F
D
D1
Po
P1
Ao
Bo
Ko
t
2 .0 ± 0 .1
6 .4 ± 0 .1
5 .2 ± 0 . 1
5 .5 ± 1
A p p lic a tio n
T S S O P -8
1 .5 5 + 0 .1 1 .5 5 + 0 .2 5 4 .0 ± 0 .1
2 .1 ± 0 .1 0 .3 ± 0 .0 1 3
A
B
T1
T2
W
P
E
6 2 + 1 .5
C
1 2 .7 5 +
0 .1 5
J
330 ± 1
2 + 0 .5
1 2 .4 ± 0 .2
2 ± 0 .2
12± 0. 3
8 ± 0 .1
1 .7 5 ± 0 .1
F
D
D1
Po
P1
Ao
Bo
Ko
t
5 .5 ± 0 . 1
1 .5 + 0 .1
1 .5 + 0 .1
4 .0 ± 0 .1
2 .0 ± 0 .1
7 .0 ± 0 .1
3 .6 ± 0 .3
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
10
1 .6 ± 0 .1 0 .3 ± 0 .0 1 3
www.anpec.com.tw
APM9926/C
Cover Tape Dimensions
Application
SOP- 8
TSSOP- 8
Carrier Width
12
12
Cover Tape Width
9.3
9.3
Devices Per Reel
2500
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
11
www.anpec.com.tw