APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/5A , • • • • Pin Description 5 RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=50mΩ(typ.) @ VGS=3.0V / P-Channel & , % , 5 ! $ , / " # , -20V/-3.2A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=120mΩ(typ.) @ VGS=-3.0V SO-8 Super High Dense Cell Design for Extremely Low , RDS(ON) 5 , Reliable and Rugged SO-8 Package / / Applications 5 • N-Channel MOSFET Power Management in Notebook Computer , , , P-Channel MOSFET Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM9928 Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM9928 K : APM9928 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 1 www.anpec.com.tw APM9928 Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N-Channel P-Channel VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±16 ±16 ID* Maximum Drain Current Continuous 5 3.2 IDM Maximum Drain Current Pulsed 10 -10 PD Maximum Power Dissipation TA=25°C 2.5 2.5 TA=100°C 1.0 1.0 TJ Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance Junction to Ambient Unit V A W 150 °C -55 to 150 °C 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM9928 Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V , IDS=250µA Notes a -20 V 1 VDS=-16V , VGS=0V P-Ch -1 VDS=VGS , IDS=250µA N-Ch 0.7 0.9 1.5 VDS=VGS , IDS=-250µA P-Ch -0.7 -0.9 -1.5 VGS=±16V , VDS=0V Drain-Source On-state VGS=3.0V , IDS=3.9A Resistance VGS=-4.5V , IDS=-3.2A Diode Forward Voltage P-Ch N-Ch VGS=-3.0V , IDS=-2.0A VSD= 20 VDS=16V , VGS=0V VGS=4.5V , IDS=5.0A RDS(ON)= N-Ch N-Ch ±100 P-Ch ±100 N-Ch P-Ch 35 45 50 60 80 100 120 150 ISD=1.7A , VGS=0V N-Ch 0.8 1.3 ISD=-1.8A , VGS=0V P-Ch -0.8 -1.3 µA V nA mΩ V : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 2 www.anpec.com.tw APM9928 Electrical Characteristics (Cont.) Symbol Dynamic Q g Parameter Total Gate Charge Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time T r Turn-on Rise Time Turn-off Delay Time T f Turn-off Fall Time Ciss Input Capacitance N-Channel N-Ch 4.7 7 VDS=10V , IDS= 1A P-Ch 3.9 6 VGS=4.5V N-Ch 0.72 P-Channel P-Ch 1 VDS=-10V , IDS=-1A N-Ch VGS=-4.5V 0.96 P-Ch 1.4 N-Channel N-Ch 12 24 VDD=10V , IDS=1A , P-Ch 21 40 VGEN=4.5V , RG=10Ω N-Ch 8 17 Output Capacitance P-Ch 45 83 N-Ch VDD=-10V , IDS=-1A , 32 60 P-Ch VGEN=-4.5V , RG=10Ω 36 70 N-Ch 11 22 P-Ch 20 38 N-Ch 376 P-Ch 495 N-Ch 115 P-Ch 130 N-Ch 58 P-Ch 60 VDS=15V Frequency=1.0MHz Crss Notes b nC P-Channel VGS=0V Coss APM9928 Unit Min. Typ. Max. Test Condition > Qgs td(OFF) (TA = 25°C unless otherwise noted) Reverse Transfer Capacitance ns pF : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 3 www.anpec.com.tw APM9928 Typical Characteristics N-Channel Output Characteristics 20 VGS=3V 15 VGS=2.5V 10 5 VGS=2V 15 10 VGS=4,5,6,7,8,9,10V ID-Drain Current (A) 20 ID-Drain Current (A) Transfer Characteristics TJ=125°C 5 TJ=-55°C TJ=25°C VGS=1.5V 0 1 2 3 4 0 0.0 5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 On-Resistance vs. Drain Current 0.07 VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA 0.06 RDS(ON)-On-Resistance (Ω) 1.25 VGS=4.5V 0.05 1.00 0.04 0.75 VGS=10V 0.03 0.50 0.02 0.25 0.00 -50 1.0 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 0.5 0 -25 0 25 50 75 0.01 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 0 1 2 3 4 5 6 7 8 9 10 ID - Drain Current (A) 4 www.anpec.com.tw APM9928 Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.10 ID=5A 0.09 VGS=4.5V ID=5A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 1.6 0.08 1.4 0.07 0.06 1.2 0.05 1.0 0.04 0.03 0.8 0.02 0.6 0.01 0.00 1.8 1 2 3 4 5 6 7 8 9 0.4 -50 10 -25 0 Gate Charge 150 500 3 2 1 Ciss 400 300 Capacitance (pF) VGS-Gate-Source Voltage (V) 125 Frequency=1MHz V,5=10 V I,5= 1 A 200 Coss 100 1 100 600 0 75 Capacitance 5 0 50 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) 4 25 2 3 4 0 5 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 Crss 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 5 www.anpec.com.tw APM9928 Typical Characteristics (Cont.) N-Channel Source-Drain Diode Forward Voltage Single Pulse Power 20 10 TJ=25°C 1 20 15 TJ=150°C Power (W) 25 IS-Source Current (A) 30 10 5 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 1 10 30 Time(sec) VSD -Source-to-Drain Voltage (V) Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 Normalized Effective Transient Thermal Impedance 2 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 6 www.anpec.com.tw APM9928 Typical Characteristics P-Channel Output Characteristics Transfer Characteristics 10 10 -V GS=4,5,6,7,8,9,10V 4 -V GS=2.5V 6 -V GS=3V 6 8 -ID-Drain Current (A) -ID-Drain Current (A) 8 4 TJ=125°C TJ=-55°C 2 2 TJ=25°C -V GS=2V 0 1 2 3 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.18 RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) -I DS=250uA 1.25 0.16 0.14 1.00 -VGS=3V 0.12 0.10 0.75 -VGS=4.5V 0.08 0.50 0.06 0.04 0.25 0.00 -50 0.20 0 0.02 -25 0 25 50 75 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 0 1 2 3 4 5 6 7 8 9 10 -ID - Drain Current (A) 7 www.anpec.com.tw APM9928 Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.20 1.8 -ID=3.2A 0.18 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 1.6 0.16 -VGS=4.5V -ID=3.2A 1.4 0.14 0.10 1.2 0.12 1.0 0.08 0.8 0.06 0.6 0.04 0.02 2 3 4 5 6 7 8 9 0.4 -50 10 -25 0 Gate Charge Frequency=1MHz 700 3 2 1 2 3 4 5 Ciss 500 400 300 200 Coss 100 Crss 0 6 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 600 Capacitance (pF) -VGS-Gate-Source Voltage (V) -V,5=10 V -I,5= 1 A 1 100 125 150 800 0 75 Capacitance 5 0 50 TJ - Junction Temperature (°C) -VGS - Gate-to-Source Voltage (V) 4 25 0 5 10 15 20 -VDS - Drain-to-Source Voltage (V) 8 www.anpec.com.tw APM9928 Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage Single Pulse Power 20 10 TJ=25°C 1 20 15 TJ=150°C Power (W) 25 -IS-Source Current (A) 30 10 5 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 1 10 30 Time(sec) -VSD -Source-to-Drain Voltage (V) Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 Normalized Effective Transient Thermal Impedance 2 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 9 www.anpec.com.tw APM9928 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 1. 27BSC 0. 50BSC 8° 8° 10 www.anpec.com.tw APM9928 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 11 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM9928 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 12 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM9928 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 13 www.anpec.com.tw