AOSMD AO4701

July 2001
AO4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO4701 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
VDS (V) = -30V
ID = -5A
RDS(ON) < 49mΩ (VGS = 10V)
RDS(ON) < 64mΩ (VGS = 4.5V)
RDS(ON) < 120mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, [email protected]
A
A
S
G
1
2
3
4
8
7
6
5
K
K
D
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain CurrentA
TA=70°C
B
TA=25°C
A
Continuous Forward Current
TA=70°C
B
S
A
MOSFET
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-AmbientA
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Steady-State
Steady-State
t ≤ 10s
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±12
-5
V
-4.2
A
-30
IF
PD
Schottky
-30
IFM
TA=25°C
Maximum Junction-to-Lead
ID
IDM
VKA
Schottky reverse voltage
Pulsed Forward Current
K
G
SOIC-8
Pulsed Drain Current
D
30
4.4
V
3.2
A
2
30
2
1.44
1.44
-55 to 150
-55 to 150
°C
Typ
Max
Units
48
62.5
74
35
110
40
49
62.5
72
37
110
42
W
°C/W
°C/W
AO4701
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VGS(th)
ID(ON)
Conditions
Min
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
-30
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
-0.7
gFS
VSD
IS
Static Drain-Source On-Resistance
Rg
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
tf
trr
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
VDS=-5V, ID=-5A
±100
-1.3
nA
V
A
mΩ
83
11
120
mΩ
-0.75
-1
-3
V
A
54
7
mΩ
S
952
103
pF
pF
VGS=0V, VDS=0V, f=1MHz
77
5.9
pF
Ω
VGS=-4.5V, VDS=-15V, ID=-4A
9.5
2
nC
nC
3.1
12
4
37
12
21
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, RL=3.6Ω,
RGEN=6Ω
Body Diode Reverse Recovery Time
Junction Capacitance
µA
VGS=0V, VDS=-15V, f=1MHz
IF=-5A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
VR=30V
Irm
VR=30V, TJ=125°C
Maximum reverse leakage current
VR=30V, TJ=150°C
CT
-1
-5
49
74
64
TJ=125°C
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
-1
42.5
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Output Capacitance
Units
-25
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Crss
Max
V
TJ=55°C
VGS=-10V, ID=-5A
RDS(ON)
Typ
VR=15V
ns
nC
13
0.45
0.007
0.5
0.05
V
3.2
12
37
10
20
mA
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA
id
i l
l
ti
Alpha & Omega Semiconductor, Ltd.
pF
AO4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
25
VDS=-5V
-10V
-4.5V
20
8
6
15
-ID(A)
-ID (A)
-3V
-2.5V
10
VGS=-2V
5
125°C
4
25°C
2
0
0
0
1
2
3
4
5
0
0.5
120
1.5
Normalized On-Resistance
1.6
100
RDS(ON) (mΩ)
1
VGS=-2.5V
80
60
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-4.5V
40
VGS=-10V
ID=-5A
VGS=-4.5V
VGS=-10V
1.4
1.2
VGS=-2.5V
ID=-2A
1
20
0
2
4
6
8
0.8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
190
170
1.0E+00
150
ID=-2A
130
1.0E-01
110
-IS (A)
RDS(ON) (mΩ)
25
90
125°C
70
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
50
25°C
30
1.0E-05
10
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4701
5
3
50
175
perature
1.0
1.2
stics
Alpha and Omega Semiconductor, Ltd.
AO4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=-15V
ID=-5A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
Ciss
800
600
400
Coss
1
Crss
200
0
0
0
2
4
6
8
10
12
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
TJ(Max)=150°C
TA=25°C
20
25
30
40
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
30
100µs
1ms
0.1s
10ms
1s
1.0
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100.0
10
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
-VDS (Volts)
Z θJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
250
10
f = 1MHz
Capacitance (pF)
1
IF (Amps)
200
125°C
0.1
0.01
150
100
50
25°C
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
100
0.6
Leakage Current (mA)
IF=3A
0.5
VF (Volts)
5
0.4
IF=1A
0.3
0.2
10
1
VR=30V
0.1
0.01
0.001
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Z θJA Normalized Transient
Thermal Resistance
10
1
D=Ton/(Ton+Toff )
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Toff
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
ALPHA & OMEGA
SO-8 Package Data
SEMICONDUCTOR, INC.
DIMENSIONS IN MILLIMETERS
SYMBOLS
A
A1
A2
b
c
D
E1
e
E
h
L
aaa
θ
MIN
1.45
0.00
−−−
0.33
0.19
4.80
3.80
5.80
0.25
0.40
−−−
0°
NOM
1.50
−−−
1.45
−−−
−−−
−−−
−−−
1.27 BSC
−−−
−−−
−−−
−−−
−−−
DIMENSIONS IN INCHES
MAX
1.55
0.10
−−−
0.51
0.25
5.00
4.00
MIN
0.057
0.000
−−−
0.013
0.007
0.189
0.150
6.20
0.50
1.27
0.10
8°
0.228
0.010
0.016
−−−
0°
NOM
0.059
−−−
0.057
−−−
−−−
−−−
−−−
0.050 BSC
−−−
−−−
−−−
−−−
−−−
MAX
0.061
0.004
−−−
0.020
0.010
0.197
0.157
0.244
0.020
0.050
0.004
8°
θ
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE:
LOGO - AOS LOGO
4701
- PART NUMBER CODE.
F
- FAB LOCATION
A
- ASSEMBLY LOCATION
Y
- YEAR CODE
W
- WEEK CODE.
LN
- ASSEMBLY LOT CODE
SO-8 PART NO. CODE
PART NO.
CODE
AO4701
4701
UNIT: mm
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
SO-8 Tape and Reel Data