March 2003 AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D2 D1 D1/D2 S2 S2 G2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V ±12 V 30 1.5 W 1.08 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum 20 8 TA=25°C Power Dissipation A S2 RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W AO8804 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 20 IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C 10 13 13.3 16 VGS=4.5V, ID=5A 11.5 14 mΩ VGS=2.5V, ID=4A 15.4 19 mΩ VGS=1.8V, ID=3A 22.2 27 mΩ 1 V 2.4 A gFS Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=8A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time V 1 VSD Output Capacitance µA 0.75 TJ=125°C Coss µA 25 10 VGS=10V, ID=8A IS Units 10 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=16V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=8A VGS=10V, VDS=10V, RL=1.2Ω, RGEN=3Ω IF=8A, dI/dt=100A/µs trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 2 V A mΩ 36 0.73 S 1810 pF 232 pF 200 pF 1.6 Ω 17.9 nC 1.5 nC 4.7 nC 2.5 ns 7.2 ns 49 ns 10.8 ns 20.2 ns nC 8 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO8804 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 35 30 2.5V 4.5V 2V VDS=5V 25 30 20 ID(A) ID (A) 25 20 15 15 10 125°C 10 VGS=1.5V 5 5 0 25°C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 30 1.6 RDS(ON) (mΩ) Normalized On-Resistance VGS=1.8V 25 20 VGS=2.5V 15 VGS=4.5V 10 VGS=10V 5 VGS=4.5V ID=5A VGS=2.5V 1.4 VGS=10V 1.2 VGS=1.8V 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+01 35 1.0E+00 30 125°C ID=5A 1.0E-01 25 20 IS (A) RDS(ON) (mΩ) 2.5 125°C 15 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 5 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO8804 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=8A 2500 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 2000 1500 1000 1 Coss 500 0 Crss 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 40 TJ(Max)=150°C TA=25°C 100µs 1ms 10µs 30 Power (W) RDS(ON) 10.0 limited ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10ms 1s 1.0 TJ(Max)=150°C TA=25°C 0.1s 0.1 DC 1 0 0.001 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=83°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 20 10 10s 0.1 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA TSSOP-8 Package Data SEMICONDUCTOR, INC. SYMBOLS A A1 A2 b c D E E1 e L y θ θ PACKAGE MARKING DESCRIPTION LOGO 8804 FAWLT DIMENSIONS IN MILLIMETERS MIN −−− 0.05 0.80 0.19 0.09 2.90 4.30 0.45 −−− 0° NOM −−− −−− 1.00 −−− −−− 3.00 6.40 BSC 4.40 0.65 BSC 0.60 −−− −−− DIMENSIONS IN INCHES MAX 1.20 0.15 1.05 0.30 0.20 3.10 MIN −−− 0.002 0.031 0.007 0.004 0.114 4.50 0.169 0.75 0.10 8° 0.018 −−− 0° NOM −−− −−− 0.039 −−− −−− 0.118 0.252 BSC 0.173 0.0259 (REF) 0.024 −−− −−− MAX 0.047 0.006 0.041 0.012 0.008 0.122 0.177 0.030 0.004 8° NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE RECOMMENDED LAND PATTERN NOTE: LOGO - AOS LOGO 8804 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION W - WEEK CODE. LN - ASSEMBLY LOT CODE TSSOP-8 PART NO. CODE PART NO. AO8804 CODE 8804 UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. TSSOP-8 Carrier Tape TSSOP-8 Reel TSSOP-8 Tape Leader / Trailer & Orientation TSSOP-8 Tape and Reel Data