1N23WG SILICON MIXER DIODE DESCRIPTION: PACKAGE STYLE DO- 23 The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package • Matched pairs available by adding suffix “M” or “MR” for matched forward and reverse MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C NONE CHARACTERISTICS TC = 25 °C SYMBOL NF TEST CONDITIONS F = 9375 MHz RL = 100 Ω Plo = 1.0 mW IF = 30 MHz MINIMUM TYPICAL NFif = 1.5 dB VSWR ZIF frange MAXIM UNITS 6.5 dB 1.3 RL = 22 Ω f = 1000 Hz 335 465 Ω 8.0 12.4 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1