ASAT10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT10 is Designed for PACKAGE STYLE .250 2L FLG(A) A .020 x 45° Ø .130 NOM. FEATURES: .050 x 45° • Input Matching Network • • Omnigold™ Metalization System D C L B M E F G H MAXIMUM RATINGS 2.3 A IC J I K MAXIMUM DIM MINIMUM inches / mm inches / mm A .055 / 1.40 .065 / 1.65 VCBO 45 V VCEO 15 V C .243 / 6.17 .253 / 6.43 D .635 / 16.13 .665 / 16.89 VEBO 3.5 V E .555 / 14.10 .565 / 14.35 F .739 / 18.77 .749 / 19.02 G .315 / 8.00 .325 / 8.26 H .002 / 0.05 .006 / 0.15 I .055 / 1.40 .065 / 1.65 -65 C to +200 C J .075 / 1.91 .095 / 2.41 TSTG -65 OC to +150 OC L θ JC 6.0 OC/W .124 / 3.15 B PDISS O 29 W @ TC = 25 C O TJ O CHARACTERISTICS SYMBOL .190 / 4.83 K .245 / 6.22 .255 / 6.48 .092 / 2.34 M ORDER CODE: ASI10517 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 3.0 mA 45 V BVCEO IC = 3.0 mA 12 V BVEBO IE = 3.0 mA 3.5 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 28 V IC = 600 mA 15 f = 1.0 MHz POUT = 10 W f = 1.65 GHz 11 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 150 --- 7.0 pF dB % REV. A 1/1