AVD002P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL (A) DESCRIPTION: A .100x45° The ASI AVD002P is Designed for C FEATURES: B • • • Omnigold™ Metalization System ØG D MAXIMUM RATINGS E IC 250 mA VCC 37 V MAXIMUM DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .195 / 4.95 .205 / 5.21 C 1.000 / 25.40 PDISS 10 W @ TC ≤ 100 OC TJ -65 OC to +200 OC D .004 / 0.10 .007 / 0.18 E .050 / 1.27 .065 / 1.65 TSTG -65 OC to +150 OC F θ JC 10 OC/W CHARACTERISTICS SYMBOL G F .145 / 3.68 .275 / 6.99 .285 / 7.21 ORDER CODE: ASI10553 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 1 mA BVCER IC = 5 mA BVEBO IE = 1 mA ICES VCE = 35 V hFE VCE = 5.0 V PG ηC VCC = 35 V MHz RBE = 10 Ω IC = 100 A POUT = 2.0 W MINIMUM TYPICAL MAXIMUM 45 V 45 V 3.5 V 30 f = 1025 – 1150 UNITS 9.0 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 300 --dB % REV. A 1/1