VMB80-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VMB80-28S is Designed for .112x45° A B FEATURES: • • • Omnigold™ Metalization System ØC D G #8-32 UNC-2A IC 9.0 A VCBO 65 V VEBO I J MAXIMUM RATINGS VCEO H F E 36 V 4.0 V MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 PDISS 103 W @ TC = 25 OC F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 TJ -65 OC to +200 OC H .090 / 2.29 .100 / 2.54 I .155 / 3.94 TSTG -65 OC to +150 OC θ JC 1.05 OC/W CHARACTERISTICS SYMBOL .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10749 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 36 V BVCES IC = 20mA 65 V BVEBO IE = 10 mA 4.0 V ICES VCE = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 28 V IC = 500 mA 5.0 f = 1.0 MHz POUT = 80 W f = 88 MHz 10 mA -- --- 200 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 % REV. A 1/1