AVD0.5P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL DESCRIPTION: A The ASI AVD0.5P is Designed for S FEATURES: D ØB • • • Omnigold™ Metalization System G S ØC D E MAXIMUM RATINGS IC 300 mA VCE 20 V PDISS --- W O -65 C to +150 C θ JC 35.0 OC/W SYMBOL inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 1.055 / 26.80 C .275 / 6.99 .285 / 7.24 D .004 / 0.10 .006 / 0.15 E .050 / 1.27 .060 . 1.52 F .118 / 3.00 .130 / 3.30 O TSTG CHARACTERISTICS MINIMUM B -65 OC to +200 OC TJ DIM F ORDER CODE: ASI10551 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1 mA 50 V BVCEO IC = 5 mA 20 V BVEBO IE = 1 mA 3.5 V ICES VCE = 28 V hFE VCE = 5.0 V PG VCC = 12.5 V IC = 100 mA POUT = 0.5 W f = 1025 - 1150 MHz 15 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 120 --dB REV. A 1/1