AVF300 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .025 x 45° 4x .062 x 45° 2X B The ASI AVF300 is Designed for ØD C E F FEATURES: G H • • • Omnigold™ Metalization System L P M MAXIMUM RATINGS 18.8 A IC I J K DIM MINIMUM inches / mm inches / mm A .020 / 0.51 .030 / 0.76 MAXIMUM B .100 / 2.54 C .376 / 9.55 D .110 / 2.79 .130 / 3.30 E .395 / 10.03 .407 / 10.34 .396 / 10.06 VCC 55 V F .193 / 4.90 G .450 / 11.43 625 W @ TC = 25 OC H PDISS -65 OC to +250 OC TJ O O TSTG -65 C to +200 C θ JC O CHARACTERISTICS SYMBOL .660 / 16.76 J .890 / 22.61 .910 / 23.11 K .395 / 10.03 .415 / 10.54 L .004 / 0.10 .007 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 ORDER CODE: ASI10572 O NONETEST CONDITIONS IC = 10 mA BVCER IC = 25 mA BVEBO IE = 1 mA ICES VCE = 50 V hFE VCE = 5.0 V ηC .640 / 16.26 TC = 25 C BVCBO GP .125 / 3.18 I P 0.3 C/W N VCC = 50 V RBE = 10 Ω IC = 1.0 A POUT = 300 W MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 15 f = 1030 - 1090 MHz UNITS 25 mA 120 --- 7.7 dB 40 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1