ASI BLV32F

BLV32F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV32F is Designed for in
linear v.h.f. amplifiers of television
transmitters and transporters.
FEATURES:
PACKAGE STYLE .500 6L FLG
• Diffused emitter ballasting resistors
• PG = 16 dB at 10 W/224 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
4.0 A
VCBO
60 V
VCEO
32 V
VCES
60 V
VEBO
4.0 V
PDISS
82 W @ TC = 25 C
TJ
-65 C to +200 C
TSTG
-65 C to +150 C
θJC
2.1 C/W
O
O
O
O
O
1= Collector 2= Base 3 and 4= Emitter
O
CHARACTERISTICS
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 100 mA
32
V
BVCES
IC = 15 mA
60
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 32 V
hFE
VCE = 25 V
CC
VCB = 25 V
PG
VCE = 25 V
IC = 1.6 A
20
f = 1.0 MHz
POUT = 10 W
f = 224 MHz
50
16
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5.0
mA
120
--pF
dB
REV. A
1/1