CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI CBSL15 is Designed for A .040x45° B C 2XØ.130 4X .025 R FEATURES: .115 .430 D • • • Omnigold™ Metalization System E F .125 G H I J K MAXIMUM RATINGS 2.5 A IC 48 V VCBO 30 V VCEO 4.0 V VEBO PDISS O 29 W @ TC = 25 C -65 OC to +200 OC TJ O MINIMUM inches / mm MAXIMUM inches / mm A .355 / 9.02 .365 / 9.27 B .115 / 2.92 .125 / 3.18 C .075 / 1.91 .085 / 2.16 D .225 / 5.72 .235 / 5.97 E .090 / 2.29 .110 / 2.79 F .720 / 18.29 .730 / 18.54 G .970 / 24.64 .980 / 24.89 H .355 / 9.02 .365 / 9.27 I .004 / 0.10 .006 / 0.15 J .120 / 3.05 .130 / 3.30 K .160 / 4.06 .180 / 4.57 L .230 / 5.84 .260 / 6.60 O TSTG -65 C to +150 C θ JC 6.0 OC/W CHARACTERISTICS SYMBOL DIM L ORDER CODE: ASI10581 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 48 V BVCEO IC = 20 mA 25 V BVEBO IE = 5 mA 3.5 ICBO VCB = 24 V hFE VCE = 10 V COB VCB = 24 V PG ηC VCC = 24 V POUT = 15 W IC = 100 mA 4.0 20 f = 1.0 MHz ICQ = 75 mA f = 960 MHz 8.0 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- V 1.0 mA 100 --- 25 pF dB % REV. A 1/1