CBSL1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. PACKAGE STYLE .280 4L STUD A 45° C FEATURES: • Pg = 10 dB min. @ 960 MHz • P1dB = 1.0 Watts min. at 960 MHz • Omnigold™ Metalization System E E B B C D J E MAXIMUM RATINGS I F G IC 0.25 A VCBO 40 V 28 V VCEO 3.5 V VEBO PDISS H K 7.0 W @ TC = 25 C MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .130 / 3.30 G -65 OC to +200 OC O .245 / 6.22 TSTG -65 C to +150 C θ JC 25 C/W SYMBOL J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10577 O CHARACTERISTICS .255 / 6.48 .640 / 16.26 I O .137 / 3.48 .572 / 14.53 H TJ MAXIMUM DIM F O #8-32 UNC O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1 mA 40 V BVCEO IC = 1 mA 25 V BVEBO IE = 1 mA 3.5 V ICBO VCB = 24 V hFE VCE = 5.0 V COB VCB = 28 V PG P1dB VCC = 24 V IC = 100 mA 20 f = 1.0 MHz ICQ = 125 mA f = 960 MHz 10 1.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 500 µA 120 --- 5.0 pF dB W REV. A 1/1