D1-28Z NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The D1-28Z is Designed for General Purpose Class C Amplifier Applications up to 1.0 GHz. A 45° C E E B FEATURES: B • PG = 8.0 dB Typ. at 1 W/1,000 MHz • Emitter Ballasting for Ruggedness • Omnigold™ Metallization System C D J E I F G H K MAXIMUM RATINGS #8-32 UNC DIM MINIMUM inches / mm MAXIMUM inches / mm A 1.010 / 25.65 1.055 / 26.80 IC 1.0 A B .220 / 5.59 .230 /5.84 VCB 45 V C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 PDISS 7 W @ TC = 25 OC E .117 / 2.97 TJ -65 to +200 OC G .130 / 3.30 .245 / 6.22 H θ JC -65 to +150 OC O 25 C/W CHARACTERISTICS SYMBOL J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10807 TC = 25 OC TEST CONDITIONS BV CBO IC = 1 mA BV CER IC = 20 mA BV EBO IE = 1 mA ICBO VCE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηC VCE = 28 V .255 / 6.48 .640 / 16.26 I T STG .137 / 3.48 .572 / 14.53 F MINIMUM TYPICAL MAXIMUM RBE = 10 Ω IC = 100 mA 45 V 45 V 3.5 V 15 f = 1.0 MHz POUT = 1.0 W f = 1,000 MHz UNITS 7.0 65 8.0 250 µA 150 --- 5.0 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.