DKV6510-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6510-12 is an Ion Implanted Silicon Hyperabrupt Varactor Diode Designed for Octave Tuning up to 500 MHz. FEATURES INCLUDE: PACKAGE STYLE DO-7 • Large Tuning Ratio – 14:1 Typ. • High Q – 700 Typ. • Hermetic Glass DO-7 Package MAXIMUM RATINGS IF 100 mA VR 12 V PDISS 400 mW @ TC = 25 OC TJ -55 OC to +150 OC T STG -65 OC to +200 OC NONE CHARACTERISTICS SYMBOL TC = 25 OC TEST CONDITIONS MINIMUM VBR IR = 10 µA IR VR = 10 V CT2 VR = 2.0 V f = 1.0 MHz CT10 VR = 10 V CT2/ CT10 Q TYPICAL MAXIMUM 12 UNITS V 100 µA 45 75 pF f = 1.0 MHz 4.0 7.0 pF VR = 2 & 10 V f = 1.0 MHz 10.0 17.0 --- VR = 2.0 V f = 1.0 MHz 200 700 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-300 Specifications are subject to change without notice. --- REV. A 1/1