HF75-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF75-28F is Designed for B .112 x 45° A E FEATURES: C Ø.125 NOM. FULL R J • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System .125 B E C D E F G H I MAXIMUM RATINGS IC 10 A VCB VCE PDISS DIM MINIMUM inches / mm inches / mm 60 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 35 V C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 TJ 140 W @ TC = 25 C O -65 C to +200 C T STG -65 OC to +150 OC θ JC 1.05 OC/W CHARACTERISTICS SYMBOL F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10606 TC = 25 OC NONETEST CONDITIONS BV CEO IC = 50 mA BV CER IC = 50 mA BV EBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V GPE VCE = 25 V IMD3 .385 / 9.78 E O O MAXIMUM PREF = 16 W MINIMUM TYPICAL MAXIMUM RBE = 10 Ω IC = 1.0 A 35 V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz UNITS 13.5 5 mA 100 --- 80 pF 14.5 Snd. = -7 dB dB -55 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.