HF8-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28F is Designed for PACKAGE STYLE .380 4L FLG FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System B .112 x 45° A E C J .125 E B C MAXIMUM RATINGS D E F IC 1.0 A VCBO 65 V VCEO 35 V VCES VEBO PDISS G H I DIM MINIMUM inches / mm inches / mm 65 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 4.0 V C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 13.0 W @ TC = 25 C O -65 C to +200 C T STG -65 OC to +150 OC θ JC 13.5 OC/W CHARACTERISTICS SYMBOL MAXIMUM .385 / 9.78 E O O TJ Ø.125 NOM. FULL R F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10600 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 200 mA 35 V BV CES IC = 200 mA 65 V BV CBO IC = 200 mA 65 V BV EBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V GP POUT VCC = 28 V IC = 200 mA 5.0 f = 1.0 MHz PIN = 1.0 W f = 150 MHz 10 10 1.0 mA --- --- 15 pF --- dB W A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.